Taiwan Semiconductor Manufacturing Comp. Ltd.

Kuan-Chu Chen

Shih-Wei Chen

Wen-Tsai Yen

Chung-Hsien Wu

Wen-Chin Lee

Ying-Hsin Wu

Jui-Fu Hsueh

A solar cell with a molybdenum back electrode layer and a molybdenum selenide ohmic contact layer over the molybdenum back electrode, is provided. The molybdenum selenide layer includes an accurately controlled thickness. A distinct interface exists between the molybdenum back electrode layer and the molybdenum silicide layer. The molybdenum silicide layer is produced by forming a molybdenum layer or a molybdenum nitride layer or a molybdenum oxide layer over an initially formed molybdenum layer such that an interface exists between the two layers. A selenization and sulfurization process is carried out to selectively convert the molybdenum-containing layer to molybdenum selenide but not the original molybdenum back electrode layer which remains as a molybdenum layer.

Molybdenum selenide sublayers with controlled thickness in solar cells and methods for forming the same

A sputtering apparatus comprises a chamber configured to contain at least one sputter target and at least one substrate to be coated. The chamber has at least one adjustable shielding member defining an adjustable aperture. The member is positioned between the at least one sputter target and the at least one substrate. The aperture is adjustable in at least one of the group consisting of area and shape.

Sputtering apparatus and method

Growing community of inventors

Tainan, Taiwan

Kuan-Chu Chen