Taiwan Semiconductor Manufacturing Comp. Ltd.

Kuan-Cheng Wang

Han-Ti Hsiaw

Shin-Yeu Tsai

Yi-Wei Chiu

Chih-Hung Sun

Jr-Yu Chen

Wen-Cheng Wu

Tsung Han Hsu

Keng-Chu Lin

Ching-Hua Hsieh

Yi-Yang Lei

Chien-Feng Lin

Chun-Hao Hsu

Jeng-Yang Pan

FinFET structures and methods of forming the same are disclosed. In a method, a fin is formed on a substrate, an isolation region is formed on opposing sides of the fin. The isolation region is doped with carbon to form a doped region, and a portion of the isolation region is removed to expose a top portion of the fin, wherein the removed portion of the isolation region includes at least a portion of the doped region.

Semiconductor device and method

A method includes etching a semiconductor substrate to form trenches extending into the semiconductor substrate, and depositing a first dielectric layer into the trenches. The first dielectric layer fills lower portions of the trenches. A Ultra-Violet (UV) treatment is performed on the first dielectric layer in an oxygen-containing process gas. The method further includes depositing a second dielectric layer into the trenches. The second dielectric layer fills upper portions of the trenches. A thermal treatment is performed on the second dielectric layer in an additional oxygen-containing process gas. After the thermal treatment, an anneal is performed on the first dielectric layer and the second dielectric layer.

Isolation regions including two layers and method forming same

A polishing pad, a polishing apparatus and a method of manufacturing a semiconductor package using the same are provided. In some embodiments, a polishing pad includes a sub-pad portion and a top pad portion over the sub-pad portion. The top pad portion includes a plurality of grooves having a first width and a plurality of openings having a second width different from the first width, and the openings are located in a center zone of the polishing pad.

Polishing pad, polishing apparatus and method of manufacturing semiconductor package using the same

A method includes performing an implantation on a portion of a first layer to form an implanted region, and removing un-implanted portions of the first layer. The implanted region remains after the un-implanted portions of the first layer are removed. An etching is then performed on a second layer underlying the first layer, wherein the implanted region is used as a portion of a first etching mask in the etching. The implanted region is removed. A metal mask is etched using the second layer to form a patterned mask. An inter-layer dielectric is then etched to form a contact opening, wherein the patterned mask is used as a second etching mask.

Contact openings and methods forming same

Integrated bi-layer STI deposition

A method of forming a semiconductor device includes forming a dielectric layer over a substrate, and curing the dielectric layer with a first curing process. The first curing process includes providing a first UV light source, filtering the first UV light source with a first filter, the first filter permitting a first electromagnetic radiation within a first pre-determined spectrum to pass through and blocking electromagnetic radiation outside the first pre-determined spectrum, and curing the dielectric layer with the first electromagnetic radiation of the first UV light source.

Optical filtering for integrated dielectrics UV curing processes

An embodiment is a method including depositing a first flowable film over a substrate in a processing region, the first flowable film comprising silicon and nitrogen, curing the first flowable film in a first step at a first temperature with a first process gas and ultra-violet light, the first process gas including oxygen, curing the first flowable film in a second step at a second temperature with a second process gas and ultra-violet light, the second process gas being different than the first process gas, and annealing the cured first flowable film at a third temperature to convert the cured first flowable film into a silicon oxide film over the substrate.

Flowable films and methods of forming flowable films

The present disclosure provides a method forming a semiconductor device in accordance with some embodiments. The method includes receiving a substrate having a fin protruding through the substrate, wherein the fin is formed of a first semiconductor material, exposing the substrate in an environment including hydrogen radicals, thereby passivating the protruded fin using the hydrogen radicals, and epitaxially growing a cap layer of a second semiconductor material to cover the protruded fin.

Growing community of inventors

Toufen, Taiwan

Kuan-Cheng Wang