Taiwan Semiconductor Manufacturing Comp. Ltd.

TSMC China Company Limited

TSMC Nanjing Company, Limited

TSMC China Company, Limiied

Kuan Cheng

He-Zhou Wan

Ching-Wei Wu

Xiu-Li Yang

XiuLi Yang

Luping Kong

Lu-Ping Kong

Wei-Yang Jiang

Wenchao Hao

A circuit comprises a memory array, a tracking bit line and a timing control circuit. The memory array comprises a plurality of tracking cells. The tracking bit line is coupled between a first node and the plurality of tracking cells. The timing control circuit is coupled to the first node and comprises a Schmitt trigger. The Schmitt trigger generates a negative bit line enable signal in response to that a voltage level on the first node being below a low threshold voltage value of the Schmitt trigger. The timing control circuit generates a negative bit line trigger signal according to the negative bit line enable signal for adjusting voltage levels of a plurality of bit lines of the memory array.

Timing control circuit of memory device with tracking word line and tracking bit line

A device includes a first memory bank and a second memory bank. The first memory bank is configured to operate according to a write data signal and a first global write signal associated with a first clock signal. The second memory bank is configured to operate according to the write data signal and a second global write signal associated with a second clock signal. One of the first clock signal and the second clock signal is in oscillation when another one of the first clock signal and the second clock signal is in suspension.

Write circuit of memory device and method of operating the same

A latch circuit includes a latch clock generator configured to generate a latched clock signal based on a clock signal and a first enable signal, and an input latch coupled to the latch clock generator to receive the latched clock signal. The input latch is configured to generate a latched output signal based on the latched clock signal and an input signal. In response to the first enable signal having a disabling logic level, the latch clock generator is configured to set a logic level of the latched clock signal to a corresponding disabling logic level, regardless of the clock signal. The latch clock generator includes a first inverter configured to generate an inverted signal of the first enable signal, and a NAND gate coupled to the first inverter to receive the inverted signal of the first enable signal. The NAND gate is configured to generate the latched clock signal based on the clock signal and the inverted signal of the first enable signal.

Latch circuit, memory device and method

An integrated circuit includes multiple memory cells, a first pair of complementary data lines, a second pair of complementary data lines, multiple first word lines, and multiple second word lines. The memory cells include a first array of memory cells and a second array of memory cells. The first pair of complementary data lines are coupled to the first array of memory cells. The second pair of complementary data lines are coupled to the second array of memory cells. Lengths of the first pair of complementary data lines are shorter than lengths of the second pair of complementary data lines. The first word lines and the second word lines are arranged according to a predetermined ratio of a number of the first word lines to a number of the second word lines. The predetermined ratio is less than 1.

Integrated circuit with asymmetric arrangements of memory arrays

A circuit includes a tracking word line, a power switch, a tracking bit line, a sense circuit. The power switch is coupled between the tracking word line and a first node. The power switch is configured to discharge a voltage level on the first node in response to a clock pulse signal transmitted through the tracking word line to the power switch. The tracking bit line is coupled between the first node and a plurality of tracking cells in a memory array. The sense circuit is coupled between the first node and a second node. The sense circuit is configured to generate a negative bit line enable signal in response to that the voltage level on the first node is below a threshold voltage value of the sense circuit.

An integrated circuit includes a plurality of memory cells, a first pair of complementary data lines, and a second pair of complementary data lines. The plurality of memory cells include a first array of memory cells and a second array of memory cells. The first pair of complementary data lines are coupled to the first array of memory cells. The second pair of complementary data lines are different from the first pair of complementary data lines and are coupled to the second array of memory cells. A number of memory cells in the first array of memory cells is different from a number of memory cells in the second array of memory cells.

A circuit includes a plurality of registers, each register including SRAM cells, a read port configured to receive a read address, a write port configured to receive a write address, a selection circuit, a latch circuit, and a decoder coupled in series between the read and write ports and the plurality of registers, and a control circuit. Responsive to a clock signal and read and write enable signals, the control circuit causes the selection circuit, the latch circuit, and the decoder to select a first register of the plurality of registers in a read operation based on the read address, and select a second register of the plurality of registers in a write operation based on the write address.

Shared decoder circuit and method

A device includes memory banks, a first pair of write data wirings, a second pair of write data wirings and a global write circuit. The first pair of write data wirings is connected to a first group among the memory banks. The second pair of write data wirings is connected to a second group among the memory banks. In response to a first clock signal, the global write circuit generates a first global write signal and a first complement global write signal transmitted to the first group among the memory banks through the first pair of write data wirings. In response to a second clock signal, the global write circuit generates a second global write signal and a second complement global write signal transmitted to the second group among the memory banks through the second pair of write data wirings.

Write circuit of memory device

A circuit includes a selection circuit configured to receive a first address from a first port and a second address from a second port, a first latch circuit coupled to the selection circuit and configured to output each of the first address and the second address received from the selection circuit, a decoder, and a control circuit. The control circuit is configured to generate a plurality of signals configured to cause the decoder to decode each of the first address and the second address.

An integrated circuit includes a first array of memory cells, a second array of memory cells, a first pair of complementary data lines, a second pair of complementary data lines, and a third pair of complementary data lines. The first pair of complementary data lines extend along the first array of memory cells, and are coupled to the first array of memory cells. The second pair of complementary data lines extend along the second array of memory cells, and are coupled to the first pair of complementary data lines. The third pair of complementary data lines extend along the second array of memory cells, and are coupled to the second array of memory cells. A number of rows of memory cells in the first array of memory cells is different from a number of rows of memory cells in the second array of memory cells.

A latch circuit includes a latch clock generator configured to generate a latched clock signal based on a clock signal and a first enable signal, and an input latch coupled to the latch clock generator to receive the latched clock signal. The input latch is configured to generate a latched output signal based on the latched clock signal and an input signal. In response to the first enable signal having a disabling logic level, the latch clock generator is configured to set a logic level of the latched clock signal to a corresponding disabling logic level, regardless of the clock signal.

A circuit includes a selection circuit configured to receive a first address at a first input and a second address at a second input, pass the first address to an output when a select signal has a first logical state, and pass the second address to the output when the select signal has a second logical state different from the first logical state. The circuit also includes a decoder configured to decode the passed first address or second address.

Growing community of inventors

Shanghai, China

Kuan Cheng