Taiwan Semiconductor Manufacturing Comp. Ltd.

Kuan-Chen Wang

Keng-Chu Lin

Shwang-Ming Jeng

Chung-Chi Ko

Po-Cheng Shih

Chih-Lung Lin

Fang-Wen Tsai

Chih-Hao Chen

Tai-Yen Peng

Wen-Kuo Hsieh

In the formation of an interconnect structure, a metal feature is formed in a dielectric layer. An etch stop layer (ESL) is formed over the metal feature and the dielectric layer using a precursor and a carbon-source gas including carbon as precursors. The carbon-source gas is free from carbon dioxide (CO). The precursor is selected from the group consisting essentially of 1-methylsilane (1MS), 2-methylsilane (2MS), 3-methylsilane (3MS), 4-methylsilane (4MS), and combinations thereof.

Low-k Cu barriers in damascene interconnect structures

A method of lithography patterning includes forming a mask layer on a material layer and forming a capping layer on the mask layer. The capping layer is a boron-containing layer with a higher resistance to an etching reaction of patterning process of the material layer. By adapting the boron-containing layer as the capping layer, the thickness of the mask layer can be thus reduced. Hence, a better gap filling for forming an interconnect metallization in the material layer could be achieved as well.

Double patterning strategy for contact hole and trench in photolithography

An extreme low-k (ELK) dielectric film scheme for advanced interconnects includes an upper ELK dielectric layer and a lower ELK dielectric with different refractive indexes. The refractive index of the upper ELK dielectric layer is greater than the refractive index of the lower ELK dielectric layer.

Extreme low-K dielectric film scheme for advanced interconnects

Extreme low-k dielectric film scheme for advanced interconnect

Growing community of inventors

Hsinchu, Taiwan

Kuan-Chen Wang