Lg Innotek Co., Ltd.

Argo Ai Gmbh

Argo Al, LLC

Krystyna Slomkowski

Mark Itzler

Brian Piccione

Xudong Jiang

John Hostetler

Harold Y Hwang

John L Hostetler

A GmAPD FPA having increased tolerance optical overstress includes a limit resistor that is monolithically integrated into each pixel in the FPA, and which limits the magnitude of the current entering the read out integrated circuit.

Geiger-mode focal plane array having increased tolerance to optical overstress

Devices, systems, and methods are provided for reducing electrical and optical crosstalk in photodiodes. A photodiode may include a first layer with passive material, the passive material having no electric field. The photodiode may include a second layer with an absorbing material, the second layer above the first layer. The photodiode may include a diffused region with a buried p-n junction. The photodiode may include an active region with the buried p-n junction and having an electric field greater than zero. The photodiode may include a plateau structure based on etching through the second layer to the first layer, the etching performed at a distance of fifteen microns or less from the buried p-n junction.

Systems, methods, and devices for reducing optical and electrical crosstalk in photodiodes

Geiger-mode focal plane array with monolithically integrated resistors

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Parlin, NJ, United States of America

Krystyna Slomkowski