International Business Machines Corporation

Globalfoundries Inc.

Kriteshwar Kaur Kohli

Anita Madan

Conal Eugene Murray

Vinod A Valecha

John A Lyons

Oh-Jung Kwon

Donghun Kang

Raj Nagesh

Divya Kannan Chakravarthi

Charles Christopher Walker

Keith Kwong Hon Wong

Siddarth A Krishnan

Joseph Francis Shepard, Jr

Ioana C Graur

Domingo A Ferrer

Sean M Polvino

Teresa L Pinto

Patrick Edward Lindo

Anthony Mauricio Pallone

Rob Bean

Reza Sarbakhsh

Mark N Jobes

Alexis Nicole Hatzis Liakas

Text blocks are semantically compared, and a semantic score is provided to a user. The semantic score is based on application of a machine learning model trained on a text corpus. One or both of the two text blocks may have one or more words that do not appear in the training text corpus (skip-words). Skip-words are used, rather than discarded, to adjust the semantic score via, for example, a penalization function. The user provides feedback about the accuracy of the adjusted semantic score, and the feedback is used to perform supervised learning model.

Natural language processing with missing tokens in a corpus

A system identifies a first text fragment as being under evaluation, wherein the first text is in at least a first document being compared to a second document using a first semantic model. The system compares the first text fragment to one or more text fragments of the second document. The system identifies top-k text fragments in the second document that are most similar to the first text fragment based on processing using the first semantic model. The system presents a user, via a graphical user interface (GUI), the top-k text fragments in visual proximity to the first text fragment.

Demonstrating textual dissimilarity in response to apparent or asserted similarity

User-specific augmentation of a real word field of view viewable through an augmented reality (AR) device is facilitated by a processor(s) receiving image data representative of a real world field of view viewable by a user through the AR device, and receiving sensor data indicative of the user's stress level, which is related, at least in part, to the user's real world field of view viewable through the AR device. The processor(s) processes the image data, based on the user's stress level, to identify one or more stress-inducing elements to be hidden in the real world field of view viewable through the AR device. Further, the processor(s) provides an augmented real world field of view for display to the user through the AR device, where the one or more stress-inducing elements are hidden from the user in the augmented real world field of view.

Augmented reality field of view based on sensed user data

A method, computer system, and a computer program product for providing a personalized anxiety-reducing navigation system for a user utilizing augmented reality (AR) and virtual reality (VR) is provided. The present invention may include detecting a current location of the user. The present invention may then include, in response to detecting the current location of the user is beyond a comfort boundary threshold, determining a stress state of the user. The present invention may also activate an AR system. The present invention may further, in response to determining the determined stress state of the user is high, activate a VR system.

Predictive navigation system

Embodiments of the present disclosure include methods, program products, and systems for creating a knowledge base for optical proximity correction (OPC). Methods according to the disclosure can include: fabricating a circuit using a proposed IC layout; identifying a plurality of features in an image of the fabricated circuit; predicting, based on the identifying and a predictive algorithm, whether the fabricated circuit includes a printed sub-resolution assist feature (SRAF) from the proposed IC layout; determining the predicting as being correct when the fabricated circuit includes the printed SRAF, or as being incorrect when the fabricated circuit does not include the printed SRAF; in response to the predicting being incorrect: adjusting the predictive algorithm, and flagging the fabricated circuit as incorrectly predicted; in response to the predicting being correct, flagging the fabricated circuit as correctly predicted; and storing the image of the fabricated circuit in a repository of training data.

Creating knowledge base for optical proximity correction to reduce sub-resolution assist feature printing

A method for forming a precision resistor or an e-fuse structure where tungsten silicon is used. The tungsten silicon layer is modified by implanting nitrogen into the structure.

Modified tungsten silicon

A method includes measuring a difference between a primary X-ray diffraction peak and a secondary X-ray diffraction peak, the primary X-ray diffraction peak corresponds to an unstrained portion of a semiconductor substrate and the secondary X-ray diffraction peak corresponds to a strained portion of the semiconductor substrate, the difference between the primary X-ray diffraction peak and the secondary X-ray diffraction peak includes a delta shift peak that corresponds to changes in a crystal lattice caused by a stress applied to the strained portion of the semiconductor substrate, the delta shift peak includes variations in a deep trench capacitance.

Capacitance monitoring using x-ray diffraction

A semiconductor device or article includes a substrate including a feature and divided into a feature region in which the feature is formed and a pad region in which the substrate is substantially unmodified, and a layer of interest applied over the substrate and feature. The pad and feature regions are irradiated and resulting photoelectron intensities are recorded and used to determine a thickness of the layer of interest over the feature. In addition, if the layer of interest includes an atomic species distinct from any in the substrate, an actual dose of the atomic species can be determined.

Non-destructive dielectric layer thickness and dopant measuring method

Capacitance monitoring using X-ray diffraction

Evaluating a semiconductor wafer may include recording a first intensity of a reflection of an X-ray beam onto a test area on a substrate of the semiconductor wafer at a detector as the X-ray beam is projected substantially perpendicular to a length of expected, periodic structures in the test area and at an angle defined between the X-ray beam and a surface of the test area. Second intensities may be recorded of the reflection of the X-ray beam onto the test area as the X-ray beam is projected onto the test area at increments from the angle. Intensity peaks in the recordings of the first and second intensities are identified and, based on positions of the intensity peaks relative to the test area, a peak spacing between the plurality of expected, periodic structures is determined indicative of pitch walking or epitaxial merge.

Growing community of inventors

White Plains, NY, United States of America

Kriteshwar Kaur Kohli