Micron Technology Incorporated

Boise State University

Ovonyx Memory Technology, LLC

Micro Technology, Inc.

Micron Technolohy, Inc.

Kristy A Campbell

John T Moore

Terry L Gilton

Joseph F Brooks

Jon Daley

Jun Liu

Jiutao Li

Allen McTeer

Warren M Farnworth

Steve W Bowes

Terry L Giltom

An apparatus, system, and method for detecting light having a specified or first wavelength. The apparatus includes a substrate that generates charge separation in the presence of light having the first wavelength. An active material is deposited onto the substrate. The active material is configured to conduct current in the presence of light having a second wavelength. Two electrodes are connected to the active material. Light having the second wavelength is constantly applied to the active material and the current is monitored via the electrodes. The active material will conduct zero or minimal current via the electrodes if the substrate does not generate charge separation. Detection the presence of light having the first wavelength may be detected upon the detection of current via the two electrodes. The first wavelength may be non-visible light and the second wavelength may be visible light.

Optically gated transistor light detector

An optically gated transistor (OGT) device that may be used as a selector device for one or more variable resistive memory devices. The OGT device isolates the one or more variable resistive memory devices when the OGT is not optically activated. The amount of current conducted by the OGT device is dependent on an intensity of light optically applied to the OGT device. The OGT device includes alternating layers of germanium selenide (GeSe) and GeSe plus an additional element deposited on a substrate. The OGT device includes only two electrodes connected to the alternating layers deposited on the substrate. The OGT device may generate an amplified electrical signal with respect to the magnitude of a received optical signal. The OGT device may be used to generate an optical signal having a different wavelength than the wavelength of a received optical signal.

Optically gated transistor selector for variable resistive memory device

A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a nanoparticle is provided between an electrode and a chalcogenide glass region. The method of forming the nanoparticle utilizes a template over the electrode or random deposition of the nanoparticle.

Resistance variable memory device with nanoparticle electrode and method of fabrication

An optically activated device that includes an active material on a substrate with two electrodes electrically connected to the active material, the active material conducts current in the presence of light and does not conduct appreciable current in the absence of light. The optically activated device functions as a photodiode, a switch, and an optically gated transistor. The optically activated device conducts current in the presences of light. The active material may be layers of germanium selenide and germanium selenide and an element. Germanium selenide may be sputtered onto a substrate to create layers of material separated by layers of co-sputtered germanium selenide with the element. The active material may be deposited onto a flexible substrate.

Optically activated transistor, switch, and photodiode

A conjugated polymer layer with a built-in diode is formed by providing a first metal-chalcogenide layer over a bottom electrode. Subsequently, a second metal-chalcogenide layer is provided over and in contact with the first metal-chalcogenide layer. The first metal-chalcogenide layer has a first conductivity type and the second metal-chalcogenide layer has a second conductivity type. The plane of contact between the first and second metal-chalcogenide layers creates the p-n junction of the built-in diode. Then a polymer layer is selectively deposited on the second metal-chalcogenide layer. The second metal-chalcogenide layer provides ions to the polymer layer to change its resistivity. A top electrode is then provided over the polymer layer. An exemplary memory cell may have the following stacked structure: first electrode/n-type semiconductor/p-type semiconductor/conjugated polymer/second electrode.

Diode/superionic conductor/polymer memory structure

A variable resistance memory device may include a first electrode and a second electrode. The device may further include a chalcogenide glass layer between the first electrode and the second electrode. The chalcogenide glass layer may include a chalcogenide glass material co-deposited with a metal material. The metal material may include tin. The device may also include a metal ion source structure between the chalcogenide glass layer and the second electrode. The device may include a buffer layer between the first electrode and the chalcogenide glass layer.

Tunable variable resistance memory device

A variable resistance memory device may include a first electrode and a second electrode. The device may further include a chalcogenide glass layer between the first electrode and the second electrode. The chalcogenide glass layer may include a chalcogenide glass material co-deposited with a metal material. The device may also include a metal ion source structure between the chalcogenide glass layer and the second electrode. The device may include a buffer layer between the first electrode and the chalcogenide glass layer.

A phase change memory element and method of forming the same. The memory element includes first and second electrodes. A first layer of phase change material is between the first and second electrodes. A second layer including a metal-chalcogenide material is also between the first and second electrodes and is one of a phase change material and a conductive material. An insulating layer is between the first and second layers. There is at least one opening in the insulating layer providing contact between the first and second layers.

Phase change current density control structure

A variable resistance memory device that includes a first electrode, a second electrode, and a first chalcogenide material layer between the first and second electrodes, the chalcogenide layer including carbon incorporated into germanium selenide chalcogenide glass. The variable resistance memory device may include a second chalcogenide material layer between the first chalcogenide material layer and the second electrode. The variable resistance memory device may include a first metallic layer between the second chalcogenide material layer and the second electrode. The variable resistance memory device may include a third chalcogenide material layer between the first metallic layer and the second electrode. The variable resistance memory device may include a fourth chalcogenide material layer between the first chalcogenide material layer and the first electrode. The first chalcogenide layer may be formed by co-sputtering carbon with GeSe.

Carbon-chalcogenide variable resistance memory device

A method of forming a memory device, such as a PCRAM, including selecting a chalcogenide glass backbone material for a resistance variable memory function and devices formed using such a method.

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Boise, ID, United States of America

Kristy A Campbell