Applied Materials, Inc.

Kristopher R Enslow

Xinhai Han

Juan Carlos Rocha-Alvarez

Daemian Raj Benjamin Raj

Shailendra Srivastava

Masaki Ogata

Wenjiao Wang

Nikhil Sudhindrarao Jorapur

Sai Susmita Addepalli

Gregory Eugene Chichkanoff

Deenesh Padhi

Amit Kumar Bansal

Tza-Jing Gung

Dmitry A Dzilno

Zheng John Ye

Edward P Hammond

Nagarajan Rajagopalan

Jonghoon Baek

Hang Yu

Sanjay G Kamath

Chuan Ying Wang

Alok Jain

Chuanxi Yang

Joshua Maher

Abhigyan Keshri

Kesong Hu

Rana Howlader

SeoYoung Lee

Zakaria Ibrahimi

Phaik Lynn Leong

Grace Qi En Teong

Exemplary methods of forming semiconductor structures may include forming a silicon oxide layer from a silicon-containing precursor and an oxygen-containing precursor. The methods may include forming a silicon nitride layer from a silicon-containing precursor, a nitrogen-containing precursor, and an oxygen-containing precursor. The silicon nitride layer may be characterized by an oxygen concentration greater than or about 5 at. %. The methods may also include repeating the forming a silicon oxide layer and the forming a silicon nitride layer to produce a stack of alternating layers of silicon oxide and silicon nitride.

Modified stacks for 3D NAND

A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.

Faceplate having a curved surface

Exemplary semiconductor processing systems may include a processing chamber and an electrostatic chuck disposed at least partially within the processing chamber. The electrostatic chuck may include at least one electrode and a heater. A semiconductor processing system may include a power supply to provide a signal to the electrode to provide electrostatic force to secure a substrate to the electrostatic chuck. The system may also include a filter communicatively coupled between the power supply and the electrode. The filter is configured to remove or reduce noise introduced into the chucking signal by operating the heater while the electrostatic force on the substrate is maintained. The filter may include active circuitry, passive circuitry, or both, and may include an adjustment circuit to set the gain of the filter so that an output signal level from the filter corresponds to an input signal level for the filter.

Power supply signal conditioning for an electrostatic chuck

An apparatus and a method for depositing a film layer that may have minimum contribution to overlay error after a sequence of deposition and lithographic exposure processes are provided. In one example, a method includes positioning a substrate on a substrate support in a process chamber, and flowing a deposition gas mixture comprising a silicon containing gas and a reacting gas to the process chamber through a showerhead having a convex surface facing the substrate support or a concave surface facing the substrate support in accordance with a stress profile of the substrate. A plasma is formed in the presence of the deposition gas mixture in the process chamber by applying an RF power to multiple coupling points of the showerhead that are symmetrically arranged about a center point of the showerhead. A deposition process is then performed on the substrate.

Film stack overlay improvement

Growing community of inventors

San Jose, CA, United States of America

Kristopher R Enslow