Micron Technology Incorporated

Micron Echnology, Inc.

Kristopher Kopel

Chang Hua Siau

Sri Rama Namala

Sheng-Huang Lee

Lu Tong

Glen Earl Hush

Timothy P Finkbeiner

Yoshinori Fujiwara

Jonathan D Harms

David W Overgaard

Andrew P Lyle

Kosei Kudo

Embodiments of the disclosure are drawn to apparatuses and methods for dynamic column select swapping. A memory may have a number of sets of bit lines organized into column planes. If a set of bit lines associated with a first address in a first column plane is defective, it may be repaired by reassigning the first address to a redundant set of bit lines in a global column redundant (GCR) column plane. If a set of bit lines associated with the first address in a second column plane is also defective, then swap logic of the memory may swap the first address to a second address and assign it to the set of bitlines in the second column plane. The second address may then also be repaired by being reassigned to the GCR column plane.

Apparatuses and methods for dynamic column select swapping

Methods, systems, and devices for on-die testing for a memory device are described. In some examples, a memory die may include processing circuitry configured to perform evaluations of the memory die based on commands or instructions received from an external device. The processing circuitry may be configured to detect failures of the memory die and transmit related indications to the external device based on the on-die detection. In some examples, the processing circuitry may be configured to communicate failure information at a finer granularity than information associated with expected or nominal behavior. Additionally or alternatively, the processing circuitry may be configured to perform operations according to an internally-generated clock signal that operates at a faster rate or speed than a clock signal from the external device. In some examples, the processing circuitry may include an analog-to-digital conversion capability for digital communication of analog characteristics internal to the memory die.

On-die testing for a memory device

Disclosed in some examples are methods, systems, devices, memory devices, and machine-readable mediums for using a non-defective portion of a block of memory on which there is a defect on a different portion. Rather than disable the entire block, the system may disable only a portion of the block (e.g., a first deck of the block) and salvage a different portion of the block (e.g., a second deck of the block).

Salvaging bad blocks in a memory device

A memory redundancy analyzing apparatus having a tester, a queue, and a redundancy analyzer is provided. The tester includes testing portions for different types of fails, and each of the testing portions performs multiple tests on the memory locations and outputs fail information for at least a part of the memory device. The queue stores the fail information. The redundancy analyzer processes the fails using the fail information and produces a plurality of repair solutions. The types of fails include must fails and sparse fails. The fail information is transmitted to the queue, and the fail information includes at least a part of the fail information for the entire memory device. The tester can operate asynchronously from the redundancy analyzer.

System and method for running test and redundancy analysis in parallel

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Boise, ID, United States of America

Kristopher Kopel