Government of the United States of America, As Represented by the Secretary of Commerce

University of Colorado

Kristine A Bertness

Matthew David Brubaker

Howard M Branz

Norman A Sanford

Mahmoud I Hussein

William Old

Joel Calvin Weber

Patrick John Fay

Pavel Kabos

Thomas M Wallis

A core-shell nanofin vertical switch performs high-voltage switching and includes: an n-type GaN nanofin core including: an n-type drift layer; an n-type channel; and an n-type source; a p-type nanofin shell surrounding the n-type GaN nanofin core at an interface surface of the n-type GaN nanofin core, and comprising GaN; an optional source contact disposed on the n-type GaN nanofin core and the p-type nanofin shell and in electrical communication with the n-type source, such that the n-type source is interposed between the source contact and the n-type channel; and a gate contact disposed on the p-type nanofin shell and in electrical communication with the p-type nanofin shell, such that the p-type nanofin shell is interposed between the gate contact and the n-type channel, and the gate contact is interposed between the source contact and a drain contact.

Core-shell nanofin vertical switch and high-voltage switching

A nanophononic metamaterial-based thermoelectric energy conversion device and processes for fabricating a nanophononic metamaterial-based thermoelectric energy conversion device is provided. In one implementation, for example, a nanophononic metamaterial-based thermoelectric energy conversion device includes a first conductive pad, a second conductive pad, and a plurality of strip units. In one implementation, the first conductive pad is coupled to a first connection of the thermoelectric energy conversion device, and the second conductive pad is coupled to a second connection of the thermoelectric energy conversion device. The plurality of strip units are connected in series between the first and second conductive pads and provide a parallel heat transfer pathway. The strip units include a nanostructure design comprising a nanophononic metamaterial.

Thermoelectric devices based on nanophononic metamaterials

A nanowire article includes a substrate; a plurality of nanowires disposed on the substrate, the nanowires comprising a semiconductor nitride, the semiconductor comprising an element selected from group 3 of the periodic table; and a superlattice layer interposed between the substrate and the plurality of gallium nitride nanowires. A process for producing a nanowire article includes disposing a superlattice layer on a substrate; disposing a first buffer layer on the superlattice layer; contacting the first buffer layer with a precursor; and forming a plurality of nanowires from the precursor on the first buffer layer to form the nanowire article, the nanowires comprising a semiconductor nitride, the semiconductor comprising an element selected from group 3 of the periodic table. A process for producing a nanowire article includes nitrogenating a substrate to form a nitrogenated layer on the substrate; contacting the nitrogenated layer with a precursor; and forming a plurality of gallium nitride nanowires from the precursor on the nitrogenated layer to form the nanowire article in an absence of a catalyst, wherein individual gallium nitride nanowires of the plurality of gallium nitride nanowires include a length axis that is substantially perpendicular to the nitrogenated layer.

Nanowire article and processes for making and using same

A scanning probe microscopy instrument includes a cantilevered tip that has a nanowire light emitting diode (LED).

Tip-mounted nanowire light source instrumentation

This invention provides an inexpensive, noninvasive optical method of quantitatively determining the volume fraction of anisotropic material in a mixture of anisotropic and isotropic material, and more particularly for determining the volume fraction of noncubic crystalline material in a mixed-phase specimen having noncubic crystalline material intermixed with cubic crystalline material. Polarized light is impinged on the specimen and the reflectance or transmission difference between two orthogonal polarization directions is measured. In cubic regions the reflectance or transmission is the same along both polarization directions so the contributions to the difference cancel, leaving a signal only from the noncubic regions. The optical difference can be measured as a function of wavelength and critical points in the band structure, including the band gap, can be profiled. From the band structure the film composition can be determined. This measurement is particularly suited to measuring III-V nitride semiconductor specimens having regions with zincblende symmetry mixed with regions of wurtzite symmetry.

Growing community of inventors

Boulder, CO, United States of America

Kristine A Bertness