Brolis Sensor Technology, Uab

Brolis Semiconductors Ltd.

Imec Vzw

Universiteit Gent

Brolis Sensor Technology, Uab Et Al.

Uab Brolis Semiconductors

Kristijonas Vizbaras

Augustinas Vizbaras

Ieva Simonyte

Günther Roelkens

Andreas De Groote

Ieva Simonytė

Edgaras Dvinelis

Ieva SimonytÉ

A solid-state device, and use and formation thereof. The device includes a light emitter () that emits light with abeam propagation direction and includes an emitter epitaxial layer stack (); a light routing medium () in optical communication with the light emitter; and a light detector () in optical communication with the light routing medium, which detects light emitted by the light emitter and includes a detector epitaxial stack (). The light emitter and detector are monolithically formed on a semiconductor substrate. The emitter and detector epitaxial layer stacks include different pluralities of layers of a single epitaxial layer stack. The beam propagation direction is either in-plane with the single epitaxial layer stack and the light detector detects light out of plane with the single epitaxial layer stack, or out of plane with the single epitaxial layer stack and the light detector detects light in plane with the single epitaxial layer stack.

Optical device having an out-of-plane arrangement for light emission and detection

A method and apparatus for beam combining for multiple multimode semiconductor laser diodes includes achieving beam combining in radiant space to provide a directional laser beam with a uniform high radiant intensity level distribution over a large area at a long distance from the source. The method uses more than one broad area high-power multimode semiconductor laser diode and individual optics for collimation, and includes combining the beams of these emitters to provide a relatively homogeneous radiant intensity beam at a long distance for applications such as directed energy delivery, free-space laser communication, and directional infrared countermeasures.

Radiant beam combining of multiple multimode semiconductor laser diodes for directional laser beam delivery applications

A spectroscopic laser sensor based on hybrid lll-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a lll-V gain-chip, e.g., an AIGalnAsSb/GaSb based gain-chip, and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AIGal-nAsSb/GaSb based photodetectors and embedded electronics for signal processing. Embodiments of the invention may be applied for real-time monitoring of critical blood analyte concentration levels such as lactates, urea, glucose, ammonia, albumin, etc.

Tunable hybrid III-V/ IV laser sensor system-on-a chip for real-time monitoring of a blood constituent concentration level

A spectroscopic laser sensor based on hybrid III-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a III-V gain-chip, e.g., an AlGaInAsSb/GaSb based gain-chip, and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AlGa1-nAsSb/GaSb based photodetectors and embedded electronics for signal processing. Embodiments of the invention may be applied for real-time monitoring of critical blood analyte concentration levels such as lactates, urea, glucose, ammonia, albumin, etc.

Tunable hybrid III-V/IV laser sensor system-on-a chip for real-time monitoring of a blood constituent concentration level

A spectroscopic laser sensor based on hybrid III-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a III-V gain-chip, e.g., an AlGaInAsSb/GaSb based gain-chip and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AlGaInAsSb/GaSb based photodetectors and embedded electronics for signal processing. Embodiments of the invention may be applied for real-time monitoring of critical blood analyte concentration levels such as lactates, urea, glucose, ammonia, albumin, etc.

Tunable hybrid III-V/IV laser sensor system-on-a-chip for real-time monitoring of a blood constituent concentration level

Methods for wavelength determination of widely tunable lasers and systems thereof may be implemented with solid-state laser based photonic systems based on photonic integrated circuit technology as well as discrete table top systems such as widely-tunable external cavity lasers and systems. The methods allow integrated wavelength control enabling immediate system wavelength calibration without the need for external wavelength monitoring instruments. Wavelength determination is achieved using a monolithic solid-state based optical cavity with a well-defined transmission or reflection function acting as a wavelength etalon. The solid-state etalon may be used with a wavelength shift tracking component, e.g., a non-balanced interferometer, to calibrate the entire laser emission tuning curve within one wavelength sweep. The method is particularly useful for integrated photonic systems based on Vernier-filter mechanism where the starting wavelength is not known a-priori, or for compact widely tunable external cavity lasers eliminating the need for calibration of wavelength via external instruments.

Wavelength determination for widely tunable lasers and laser systems thereof

A layer structure and method of fabrication of a semiconductor heterostructure containing a two-dimensional electron gas (2DEG), two-dimensional hole gas (2DHG), or a two-dimensional electron/hole gas (2DEHG). The heterostructure contains a quantum well layer with 2DEG, 2DHG, or 2DEHG embedded between two doped charge reservoir layers and at least two remote charge reservoir layers. Such scheme allows reducing the number of scattering ions in the proximity of the quantum well as well a possibility for a symmetric potential for the electron or hole wavefunction in the quantum well, leading to significant improvement in carrier mobility in a broad range of 2DEG or 2DHG concentration in the quantum well. Embodiments of the invention may be applied to the fabrication of galvano-magnetic sensors, HEMT, pHEMT, and MESFET devices.

High-mobility semiconductor heterostructures

A III-V compound semiconductor heterostructure grown on a substrate is described. The heterostructure includes a first semiconductor layer, wherein the first layer semiconductor layer is a compound semiconductor layer with (III) (V), wherein (III) represents one or more group-III elements and (V) represents one or more group-V elements, an intermediate layer on the first semiconductor layer, wherein the intermediate layer is a compound semiconductor layer with (III)(V), and wherein the intermediate layer has a thickness of 10 monolayers or below, and a second semiconductor layer, wherein the first layer semiconductor layer is a compound semiconductor layer with (III)(V)

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Vilnius, Lithuania

Kristijonas Vizbaras