University of Sheffield

Finisar UK Limited

Kristian Michael Groom

Richard Hogg

David Timothy Dylan Childs

Benjamin James Stevens

A multisection quantum dot laser () comprising at least first () and second () sections, each section () comprising a semiconductor substrate () comprising p () and n type () layers and a quantum dot layer sandwiched therebetween; the semiconductor substrate () comprising a back electrical contact in electrical contact with one of the p and n type layers and a tuning electrical contact () in electrical contact with the other of the p and n type layers; the quantum-dot layers of the first () and second () sections being portions of the same quantum dot layer () forming a laser cavity.

Methods of modulating a quantum dot laser and a multisection quantum dot laser

Embodiments of the present invention provided a method of fabricating a semiconductor light source structure. The method comprises providing a GaAs substrate; forming a lower cladding layer above the substrate, the lower cladding layer comprising an AIGaAs alloy; forming an active region above the lower cladding layer, the active region comprising a GaAs separate confinement heterostructure; and forming an upper cladding layer comprising an AIGaAs alloy above the active region in the form of an elongate stripe bounded on either side by an InGaP current-blocking layer, the elongate stripe defining an index-guided optical waveguide. The stripe is formed such that at least one free end of the stripe is spaced apart from an edge of the substrate in a direction parallel to a longitudinal axis of the stripe such that a portion of the lower cladding layer, active region, current blocking layer and upper cladding layer extend beyond the at least one free end of the stripe thereby to provide an unpumped and laterally unguided window region.

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Sheffield, United Kingdom

Kristian Michael Groom