Momentive Performance Materials Gmbh

General Electric Company

Lockheed Martin Corporation

Soraa, Inc.

Slt Technologies, Inc.

Kristi Jean Narang

Mark Philip D'Evelyn

Dong-Sil Park

Huicong Hong

Steven Francis LeBoeuf

Peter Micah Sandvik

Larry Burton Rowland

Stephen Daley Arthur

Xian-An Cao

Robert Arthur Giddings

Steven Alfred Tysoe

Larry Qiang Zeng

Robert Vincent Leonelli, Jr

Suresh Shankarappa Vagarali

John William Lucek

Anping Zhang

Joel Rice Dysart

Patrick Joseph McCloskey

William John Koros

Paul Edward Howson

John Thomas Leman

Svetlana Selezneva

Peter S Allison

Xian-an Cao

Dhaval Ajit Bhandari

John Dewey Blouch

David Dils

Mark Phillip D'Evelyn

Ludwig Christian Haber

Mark Philip D'evelyn

Hongying Peng

Steven Francis Leboeuf

A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm, with an absorbance per unit thickness of greater than about 0.01 cm. In one embodiment, the composition ay have an amount of oxygen present in a concentration of less than about 3&#xd7;10per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.

Method of forming a GaN single crystal comprising disposing a nucleation center in a first region, a GaN source material in a second region, and establishing a temperature distribution

A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm, with an absorbance per unit thickness of greater than about 0.01 cm. In one embodiment, the composition may have an amount of oxygen present in a concentration of less than about 3&#xd7;10per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.

Crystalline gallium nitride containing flourine

The invention provides improved hollow fiber membranes having at least two layers, and methods for forming the same. The methods include co-extruding a first composition, a second composition, and a third composition to form a dual layer hollow fiber membrane. The first composition includes a glassy polymer; the second composition includes a polysiloxane; and the third composition includes a bore fluid. The dual layer hollow fiber membranes include a first layer and a second layer, the first layer being a porous layer which includes the glassy polymer of the first composition, and the second layer being a polysiloxane layer which includes the polysiloxane of the second composition.

Hollow fiber membranes and methods for forming same

Method of making a gallium nitride crystalline composition having a low dislocation density

An apparatus and methods for forming a diamond film, are provided. An example of an apparatus for forming a diamond film includes an electrodeless microwave plasma reactor having a microwave plasma chamber configured to contain a substrate and to contain a reactant gas excited by microwaves to generate a microwave plasma discharge. Gas injection ports extend through an outer wall of the plasma chamber at a location upstream of the plasma discharge and above the substrate. Gas jet injection nozzles interface with the gas injection ports and are configured to form a directed gas stream of reactant gas having sufficient kinetic energy to disturb a boundary layer above an operational surface of the substrate to establish a convective transfer of the film material to the operational surface of the substrate.

Apparatus and method for diamond film growth

There is provided a GaN single crystal at least about 2.75 millimeters in diameter, with a dislocation density less than about 10cm, and having substantially no tilt boundaries. A method of forming a GaN single crystal is also disclosed. The method includes providing a nucleation center, a GaN source material, and a GaN solvent in a chamber. The chamber is pressurized. First and second temperature distributions are generated in the chamber such that the solvent is supersaturated in the nucleation region of the chamber. The first and second temperature distributions have different temperature gradients within the chamber.

Gallium nitride crystal and method of making same

A crystalline composition is provided that includes gallium and nitrogen. The crystalline composition may have an amount of oxygen present in a concentration of less than about 3&#xd7;10per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the crystalline composition. The volume may have at least one dimension that is about 2.75 millimeters or greater, and the volume may have a one-dimensional linear defect dislocation density of less than about 10,000 per square centimeter.

Crystalline composition, wafer, device, and associated method

A crystal comprising gallium nitride is disclosed. The crystal has at least one grain having at least one dimension greater than 2.75 mm, a dislocation density less than about 10cm, and is substantially free of tilt boundaries.

Gallium nitride crystals and wafers and method of making

A method for growing a nitride crystal and a crystalline composition selected from one of AlN, InGaN, AlGaInN, InGaN, and AlGaNInN is provided. The composition comprises a true single crystal, grown from a single nucleus, at least 1 mm in diameter, free of lateral strain and tilt boundaries, with a dislocation density less than about 10cm.

Method for forming nitride crystals

A crystalline composition is provided. The crystalline composition may include gallium and nitrogen; and the crystalline composition may have an infrared absorption peak at about 3175 cm, with an absorbance per unit thickness of greater than about 0.01 cm.

Crystalline composition, wafer, and semi-conductor structure

A capsule for containing at least one reactant and a supercritical fluid in a substantially air-free environment under high pressure, high temperature processing conditions. The capsule includes a closed end, at least one wall adjoining the closed end and extending from the closed end; and a sealed end adjoining the at least one wall opposite the closed end. The at least one wall, closed end, and sealed end define a chamber therein for containing the reactant and a solvent that becomes a supercritical fluid at high temperatures and high pressures. The capsule is formed from a deformable material and is fluid impermeable and chemically inert with respect to the reactant and the supercritical fluid under processing conditions, which are generally above 5 kbar and 550&#xb0; C. and, preferably, at pressures between 5 kbar and 80 kbar and temperatures between 550 &#xb0; C. and about 1500&#xb0; C. The invention also includes methods of filling the capsule with the solvent and sealing the capsule, as well as an apparatus for sealing the capsule.

High temperature high pressure capsule for processing materials in supercritical fluids

A method may produce a resonant cavity light emitting device. A seed gallium nitride crystal and a source material in a nitrogen-containing superheated fluid may provide a medium for mass transport of gallium nitride precursors therebetween. A seed crystal surface may be prepared by applying a first thermal profile between the seed gallium nitride crystal and the source material. Gallium nitride material may be grown on the prepared surface of the seed gallium nitride crystal by applying a second thermal profile between the seed gallium nitride crystal and the source material while the seed gallium nitride crystal and the source material are in the nitrogen-containing superheated fluid. A stack of group III-nitride layers may be deposited on the single-crystal gallium nitride substrate. The stack may include a first mirror sub-stack and an active region adaptable for fabrication into one or more resonant cavity light emitting devices.

Resonant cavity light emitting devices and associated method

A capsule for containing at least one reactant and a supercritical fluid in a substantially air-free environment under high pressure, high temperature processing conditions. The capsule includes a closed end, at least one wall adjoining the closed end and extending from the closed end; and a sealed end adjoining the at least one wall opposite the closed end. The at least one wall, closed end, and sealed end define a chamber therein for containing the reactant and a solvent that becomes a supercritical fluid at high temperatures and high pressures. The capsule is formed from a deformable material and is fluid impermeable and chemically inert with respect to the reactant and the supercritical fluid under processing conditions, which are generally above 5 kbar and 550&#xb0; C. and, preferably, at pressures between 5 kbar and 80 kbar and temperatures between 550&#xb0; C. and about 1500&#xb0; C. The invention also includes methods of filling the capsule with the solvent and sealing the capsule, as well as an apparatus for sealing the capsule.

A high temperature/high pressure (HP/HT) apparatus for converting feedstock housed in a capsule into product crystals, comprising at least two electrical heating paths for independent control of both the mean temperature in the reaction cell and the temperature gradient across the reaction cell.

High pressure/high temperature apparatus with improved temperature control for crystal growth

There is provided a GaN single crystal at least about 2 millimeters in diameter, with a dislocation density less than about 10cm, and having no tilt boundaries. A method of forming a GaN single crystal is also disclosed. The method includes providing a nucleation center, a GaN source material, and a GaN solvent in a chamber. The chamber is pressurized. First and second temperature distributions are generated in the chamber such that the solvent is supersaturated in the nucleation region of the chamber. The first and second temperature distributions have different temperature gradients within the chamber.

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Voorheesville, NY, United States of America

Kristi Jean Narang