Other

Kristel Van Baekel

Gerald M Cox

Chan-Yun Lee

John Kevin Donoghue

A method for removing organic and inorganic residues or polymers from the surface of semiconductor devices, with a combination of etchant gasses including water vapor generated using a catalytic moisture generator or CMG. The water vapor is generated by introducing O and an H containing forming gas including hydrogen and at least one dilutant gas into the CMG. The water vapor from the CMG is introduced into a reaction chamber with other etchant gasses to treat the surface of a semiconductor device placed within. The flow rate of water vapor out of the CMG and into the reaction chamber may be controlled by controlling the flow rate of the H containing forming gas and the flow rate of the O gas into the CMG.

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Richmond, CA, United States of America

Kristel Van Baekel