California Institute of Technology

Samsung Electronics Co., Ltd.

City of Hope

Krishnan Thyagarajan

Seunghoon Han

Harry A Atwater

Ho Wai Lee

Yao-Wei Huang

Ruzan Sokhoyan

Ragip Pala

Yu-Jung Lu

Ghazaleh Kafaie

Jacob Berlin

Raymond Weitekamp

Georgia Papadakis

Desiree Van Haute

Ruzan Sohkoyan

An optical modulating device includes a permittivity change layer having a variable permittivity, a dielectric layer disposed on the permittivity change layer, a nanoantenna disposed on the dielectric layer, and a light-emitting structure disposed adjacent to the permittivity change layer.

Optical modulating device having gate structure

The present disclosure is directed to processes comprising irradiating an aggregate of chemically bonded or otherwise associated nanoparticles with a light source capable of providing multiphoton excitation, the light source directed at a focal point volume including the aggregate and having sufficient energy to disrupt or fuse the aggregate within the focal point volume to form nanoscale deposits of the nanoparticles.

Multiphoton induced direct aggregate scribing

An optical modulation device includes a plasmonic nano-antenna layer, a metal layer that faces the plasmonic nano-antenna layer, and a permittivity variation layer and a dielectric material layer between the plasmonic nano-antenna layer and the metal layer. An active area formed in the permittivity variation layer according to an external signal may function as a gate that controls optical modulation performance.

Growing community of inventors

Pasadena, CA, United States of America

Krishnan Thyagarajan