Applied Materials, Inc.

Wafer Solutions, Inc.

Krishna Vepa

Hong Peng Wang

Ronald Rayandayan

Yashraj K Bhatnagar

Paul V Miller

Raymond John Donohoe

Michael R Vogtmann

Venkata R Balagani

Parris C M Hawkins

Andreas Neuber

Michael Wisnieski

Duncan Dobson

Hong Wang

Raymond J Donohoe

A resource usage optimization server determines a degradation caused by a first resource. The resource usage optimization server determines a cleaning caused by a second resource. The resource usage optimization server calculates a ratio of the degradation and the cleaning.

Process tool chemical and gas usage optimization

A silicon-on-insulator transfer wafer having a front surface with a circumferential lip around a circular recess is polished. In one version, the circular recess on the front surface of the wafer is masked by filling the recess with spin-on-glass. The front surface of the wafer is exposed to an etchant to preferentially etch away the circumferential lip, while the circular recess is masked by the spin-on-glass. The spin-on glass is removed, and the front surface of the transfer wafer is polished. Other methods of removing the circumferential lip include applying a higher pressure to the circumferential lip in a polishing process, and directing a pressurized fluid jet at the base of the circumferential lip.

Edge removal of silicon-on-insulator transfer wafer

Embodiments of the invention describe a method for reclaiming a substrate by removing surface films with media blasting. A substrate is provided having a surface film. Media blasting is performed on the substrate to remove the surface film from the surface. In one embodiment media blasting removes a film from the substrate top surface. In another embodiment media blasting removes a film from the substrate top surface and side surface.

Method for removal of surface films from reclaim substrates

An apparatus and method for inspecting wafers at a reclaim factory is described. Embodiments of the invention describe an apparatus in which a wafer ID and wafer thickness may be simultaneously measured. A wafer is placed onto a sloped surface and positioned by aligning a notch in the wafer with a pin located on the surface, and by propping the wafer against a pair of laterally opposite restraints. In one embodiment, a foot-switch is used to trigger the simultaneous wafer ID and wafer thickness measurements.

Apparatus for improving incoming and outgoing wafer inspection productivity in a wafer reclaim factory

A wafer comprising a low-k dielectric layer is refurbished for reuse. Initially, a removable layer is provided on the wafer. The low-k dielectric layer is formed over the removable layer. The overlying low-k dielectric layer is removed from the wafer by etching away the removable layer by at least partially immersing the wafer in an etching solution. Thereafter, another low-k dielectric layer can be formed over another removable layer.

Refurbishing a wafer having a low-k dielectric layer

A method of treating a substrate comprises depositing silicon oxycarbide on the substrate and removing the silicon oxycarbide from the substrate. The silicon oxycarbide on the substrate is decarbonized by exposure to an energized oxygen-containing gas that heats the substrate and converts the layer of silicon oxycarbide into a layer of silicon oxide. The silicon oxide is removed by exposure to a plasma of fluorine-containing process gas. Alternatively, the remaining silicon oxide can be removed by a fluorine-containing acidic bath. In yet another version, a plasma of a fluorine-containing gas and an oxygen-containing gas is energized to remove the silicon oxycarbide from the substrate.

Removal of silicon oxycarbide from substrates

Test substrates used to test semiconductor fabrication tools are reclaimed by reading from a database the process steps performed on each test substrate and selecting a reclamation process from a plurality of reclamation processes. The reclamation process can include crystal lattice defect or metallic contaminant reduction treatments for reclaiming each test substrate. Each test substrate is sorted and placed into a group of test substrates having a common defect or contaminant reduction treatment assigned to the test substrates of the group. Additional features are described and claimed.

Reclaiming substrates having defects and contaminants

A low-k dielectric layer having a composition of silicon, oxygen and carbon is removed from a wafer. The low-k dielectric layer is removed by exposing a surface of the low-k dielectric layer to an oxygen-containing gas to oxidized the surface. The oxidized surface is immersed in an etching solution having HF and HSOto etch the low-k dielectric layer. The etched surface is exposed to at least one of (i) an etching solution having HSOand HO, and (ii) an RF or microwave energized oxygen-containing gas, to remove the low-k dielectric layer from the wafer.

Refreshing wafers having low-k dielectric materials

The present invention provides exemplary cluster tool systems and methods for processing wafers, such as semiconductor wafers. One method includes providing () a wafer having initial thickness variations between two wafer surfaces. The wafer is subjected to grinding (), polishing () and cleaning () processes. The wafer is thereafter transferred () to a wafer processing chamber to undergo device formation processes (). The wafer processing steps may be undertaken in a series of process modules of sufficiently small size to permit their use in a circuit device fabrication facility. The in-fab processing of wafers reduces the number of process steps, cost and time typically associated with wafer processing prior to device formation thereon.

Cluster tool systems and methods for in fab wafer processing

The present invention provides exemplary methods, systems and apparatus that provide improved substrate characteristics after grinding operations by avoiding or reducing overgrind damage to the wafers. In one embodiment, a grinding apparatus ( ) includes a first spindle ( ) having an eccentric-shaped abrasive matrix ( ) coupled thereto and a second spindle ( ) adapted to hold a substrate ( ) to be ground. The second spindle is offset from said first spindle such that the abrasive matrix passes through the substrate surface center ( ) for only a portion of the time during grinding operations.

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Danville, CA, United States of America

Krishna Vepa