The State University of New York

Medical University of South Carolina

Cornell University

Memorial Sloan Kettering Cancer Center

Krishna Mandal

Mark David Poliks

Michael O Thompson

James N Turner

Andrzej Krol

C Ross Schmidtlein

Steve Czarnecki

J Russell Terry

A system and method for imaging gamma- and x-ray, and charged particles sources employing a three dimensional array of scintillation elements arranged surrounding an emission source. According to a preferred embodiment, each element of the array comprises a scintillator element, a solid-state photon detector, and processing electronics to output an electronic signal. The elements may be efficiently packed in both the X-Y plane and stacked in the Z-axis, to provide depth of interaction information. The elements of the array are preferably hierarchically arranged with control electronics provided together for subarray modules (e.g., an n&#xd7;m&#xd7;1 module), and synchronization electronics provided at a larger scale. The modules preferably communicate with a control system through a shared addressable packet switched digital communication network with a control and imaging system, and receive control information from that system through the network.

Autonomous gamma, X-ray, and particle detector

A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12&#xb0;; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a top contact on the n-type epitaxial layer. The buffer epitaxial layer can include a n-type 4H&#x2014;SiC epitaxial layer doped at a concentration of about 1&#xd7;10cmto about 5&#xd7;10cmwith nitrogen, boron, aluminum, or a mixture thereof. The n-type epitaxial layer can include a n-type 4H&#x2014;SiC epitaxial layer doped at a concentration of about 1&#xd7;10cmto about 5&#xd7;10cmwith nitrogen. The top contact can have a thickness of about 8 nm to about 15 nm.

Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer

Growing community of inventors

Columbia, SC, United States of America

Krishna Mandal