Lam Research Corporation

Krishna Birru

Anand Chandrashekar

Gang Liu

Leonard Wai Fung Kho

Bo Gong

Curtis Warren Bailey

Huatan Qiu

Geoffrey Hohn

Guangbi Yuan

Damodar Rajaram Shanbhag

Andrew H Breninger

Fengyuan Lai

Tony Kaushal

Chen-Hua Hsu

Rohit Khare

Thadeous Bamford

William Schlosser

Leonard Kho

Gishun Hsu

An exhaust system for a substrate processing system includes a radical generator configured to receive a gas mixture including halogen species and to generate halogen radicals, a first pump to pump exhaust gas from an exhaust outlet of a processing chamber, and a first valve configured to selectively fluidly connect an outlet of the radical generator to the first pump downstream from the outlet of the processing chamber.

Cleaning system for removing deposits from pump in an exhaust of a substrate processing system

Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

Ex situ coating of chamber components for semiconductor processing

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Fremont, CA, United States of America

Krishna Birru