Taiwan Semiconductor Manufacturing Comp. Ltd.

Kris Lipu Chuang

Hao-Yi Tsai

Tzu-Sung Huang

Tzuan-Horng Liu

Tsung-Yuan Yu

Cheng-Chieh Hsieh

Hsin-Yu Pan

Tsung-Hsien Chiang

Chung-Ming Weng

Ming-Hung Tseng

Hui-Chun Chiang

Chih-Wei Lin

Hsiu-Jen Lin

Yu-fu Chen

A semiconductor package and a manufacturing method are provided. The semiconductor package includes a first die disposed on and electrically coupled to a first redistribution structure and laterally covered by a first insulating encapsulation, a second die disposed over the first die and laterally covered by a second insulating encapsulation, a second redistribution structure interposed between and electrically coupled to the first and second dies, a third redistribution structure disposed on the second die and opposite to the second redistribution structure, and at least one thermal-dissipating feature embedded in a dielectric layer of the third redistribution structure and electrically isolated from a patterned conductive layer of the third redistribution structure through the dielectric layer. Through substrate vias of the first die are physically connected to the second redistribution structure or the first redistribution structure. The thermal-dissipating feature is thermally coupled to a back surface of the second die.

Semiconductor package and manufacturing method thereof

A semiconductor package includes a substrate, a redistribution circuit layer, and a protective layer. The redistribution circuit layer is over the substrate and includes a plurality of functional pads electrically connected to the substrate, and a dummy pad pattern electrically disconnected from the plurality of functional pads, wherein the dummy pad pattern includes a plurality of pad portions connected to one another. The protective layer is disposed over the redistribution circuit layer and comprising a plurality of first openings spaced apart from one another and respectively revealing the plurality of pad portions.

Semiconductor package

A semiconductor package including a first semiconductor die, a second semiconductor die, a first insulating encapsulation, a dielectric layer structure, a conductor structure and a second insulating encapsulation is provided. The first semiconductor die includes a first semiconductor substrate and a through substrate via (TSV) extending from a first side to a second side of the semiconductor substrate. The second semiconductor die is disposed on the first side of the semiconductor substrate. The first insulating encapsulation on the second semiconductor die encapsulates the first semiconductor die. A terminal of the TSV is coplanar with a surface of the first insulating encapsulation. The dielectric layer structure covers the first semiconductor die and the first insulating encapsulation. The conductor structure extends through the dielectric layer structure and contacts with the through substrate via. The second insulating encapsulation contacts with the second semiconductor die, the first insulting encapsulation, and the dielectric layer structure.

Method of fabricating semiconductor package

A package structure includes a first redistribution layer, a semiconductor die, and through vias. The first redistribution layer includes dielectric layers, first conductive patterns, and second conductive patterns. The dielectric layers are located in a core region and a peripheral region of the first redistribution layer. The first conductive patterns are embedded in the dielectric layers in the core region, wherein the first conductive patterns are arranged in the core region with a pattern density that gradually increases or decreases from a center of the core region to a boundary of the core region. The second conductive patterns are embedded in the dielectric layers in the peripheral region. The semiconductor die is disposed on the core region over the first conductive patterns. The through vias are disposed on the peripheral region and electrically connected to the second conductive patterns.

Package structure and method of fabricating the same

A semiconductor package including a first semiconductor die, a second semiconductor die, a first insulating encapsulation, a dielectric layer structure, a conductor structure and a second insulating encapsulation is provided. The first semiconductor die includes a first semiconductor substrate and a through silicon via (TSV) extending from a first side to a second side of the semiconductor substrate. The second semiconductor die is disposed on the first side of the semiconductor substrate. The first insulating encapsulation on the second semiconductor die encapsulates the first semiconductor die. A terminal of the TSV is coplanar with a surface of the first insulating encapsulation. The dielectric layer structure covers the first semiconductor die and the first insulating encapsulation. The conductor structure extends through the dielectric layer structure and contacts with the through silicon via. The second insulating encapsulation contacts with the second semiconductor die, the first insulting encapsulation, and the dielectric layer structure.

Semiconductor package and method of fabricating the same

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Hsinchu, Taiwan

Kris Lipu Chuang