Cree Gmbh

Wolfspeed, Inc.

Kraig J Olejniczak

Sei-Hyung Ryu

Edward Robert Van Brunt

Adam Barkley

Zachary Cole

A power module includes a plurality of power semiconductor devices. The plurality of power semiconductor devices includes an insulated gate bipolar transistor (IGBT) and a metal-oxide-semiconductor field-effect transistor (MOSFET) coupled in parallel between a first power switching terminal and a second power switching terminal. The IGBT and the MOSFET are silicon carbide devices. By providing the IGBT and the MOSFET together, a tradeoff between forward conduction current and reverse conduction current of the power module, the efficiency, and the specific current rating of the power module may be improved. Further, providing the IGBT and the MOSFET as silicon carbide devices may significantly improve the performance of the power module.

Growing community of inventors

Rogers, AR, United States of America

Kraig J Olejniczak