Applied Materials, Inc.

Varian Semiconductor Equipment Associates, Inc.

Krag R Senior

Charles T Carlson

Frank Sinclair

Robert Brent Vopat

Paul J Murphy

David T Blahnik

Jason M Schaller

Paul E Pergande

Aaron Webb

Chris Czajka

An ion implantation system including an ion source for generating an ion beam, an end station for holding a substrate to be implanted by the ion beam, and a linear accelerator disposed between the ion source and the end station and adapted to accelerate the ion beam, the linear accelerator comprising at least one acceleration stage including a resonator coil coupled to a drift tube assembly, the drift tube assembly including a first drift tube coupled to a first end of a first insulting rod via interference fit, a second drift tube coupled to a first end of a second insulting rod via interference fit, and a mounting bracket coupled to a second end of the first insulting rod and to a second end of the second insulting rod via interference fit.

Method of assembling drift tube assemblies in ion implantors

Embodiments herein are directed to a linear accelerator assembly for an ion implanter. In some embodiments, a LINAC may include a coil resonator and a plurality of drift tubes coupled to the coil resonator by a set of flexible leads.

Linear accelerator assembly including flexible high-voltage connection

An end effector pad including a fence member, a first recessed support member extending from a first side of the fence member, a second recessed support member extending from a second side of the fence member opposite the first side, a first glass plate having a relatively low coefficient of friction disposed on top of the first recessed support member for supporting a substrate thereon, and a second glass plate having a relatively low coefficient of friction disposed on top of the second recessed support member for supporting a substrate thereon.

End effector pads

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Austin, TX, United States of America

Krag R Senior