Fujitsu Corporation

Kozo Shimizu

Seiki Sakuyama

Toshiya Akamatsu

Teru Nakanishi

Kazuaki Karasawa

Keiji Watanabe

Yasuo Yamagishi

Tadahiro Imada

Nobuhiro Imaizumi

Taiki Uemura

Keishiro Okamoto

Toyoo Miyajima

Hisakatsu Yamaguchi

An optical module switch device includes a first serial-parallel-converter coupled to first signal-lines coupled to optical modules, and second signal-lines, a number of the second signal-lines being greater than the first signal-lines thereof, and configured to transmit/receive first signals at a first transmission-rate to/from the optical modules by using the first signal-lines, respectively, a second serial-parallel-converter coupled to second signal-lines coupled to the first serial-parallel-converter, and third signal-lines, a number of the third lines being greater than the second signal-lines thereof, and configured to transmit/receive second signals at a second transmission-rate lower than the first transmission-rate to/from the first serial-parallel-converter by using the second signal-lines, respectively, and a switch circuit coupled to the third signal-lines, and configured to transmit/receive third signals at a third transmission-rate lower than the second transmission-rate to/from the second serial-parallel-converter by using the third signal-lines, respectively, to perform routing processing based on the received third signals.

Optical module switch device

An electronic apparatus includes: a first electronic component including a first electrode; solder on the first electrode; and a phase containing In, Ag, and Cu, the phase being dispersed and included in the solder. And a method for manufacturing an electronic apparatus, the method includes: forming solder on a first electrode of a first component, the solder including a phase containing In, Ag, and Cu, the phase being dispersed in the solder.

Electronic apparatus and method for manufacturing the same

An electronic apparatus includes a first electronic part with a first terminal, a second electronic part with a second terminal opposite the first terminal, and a joining portion which joins the first terminal and the second terminal. The joining portion contains a pole-like compound extending in a direction in which the first terminal and the second terminal are opposite to each other. The joining portion contains the pole-like compound, so the strength of the joining portion is improved. When the first terminal and the second terminal are joined, the temperature of one of the first electronic part and the second electronic part is made higher than that of the other. A joining material is cooled and solidified in this state. By doing so, the pole-like compound is formed.

Electronic apparatus and method for fabricating the same

An electrical apparatus includes a first electrical component; a second electrical component; and an In&#x2014;Sn&#x2014;Ag alloy connecting the first electrical component and the second electrical component, the In&#x2014;Sn&#x2014;Ag alloy containing AgInand AgIn, a AgIn content being lower than a AgIncontent.

Electrical apparatus

A method of manufacturing a semiconductor device includes forming a barrier metal film on a surface of at least one of a first electrode of a wiring board and a second electrode of a semiconductor element, providing a connection terminal between the first and second electrodes, the connection terminal being made of solder containing tin, bismuth and zinc, and bonding the connection terminal to the barrier metal film by heating the connection terminal and maintaining the temperature of the connection terminal at a constant temperature not lower than a melting point of the solder for a certain period of time.

Semiconductor device having connection terminal of solder

A semiconductor device, includes: a connection member including a first pad formed on a principal surface thereof; a semiconductor chip including a circuit-formed surface on which a second pad is formed, the chip mounted on the connection member so that the circuit-formed surface faces the principal surface; and a solder bump that connects the first and second pads and is made of metal containing Bi and Sn, wherein the bump includes a first interface-layer formed adjacent to the second pad, a second interface-layer formed adjacent to the first pad, a first intermediate region formed adjacent to either one of the interface-layers, and a second intermediate region formed adjacent to the other one of the interface-layers and formed adjacent to the first intermediate region; Bi-concentration in the first intermediate region is higher than a Sn-concentration; and a Sn-concentration in the second intermediate region is higher than a Bi-concentration.

Semiconductor device, electronic device, and semiconductor device manufacturing method

Method of manufacturing semiconductor device capable of enhancing bonding strength between connection terminal and electrode

A manufacturing of a semiconductor device includes forming one of a layer with a first metal and the layer with a second metal on one of a semiconductor chip mounting area of a support plate and a back surface of the semiconductor chip; forming the other of the layer with the first metal and the layer with the second metal on an area corresponding to a part of the area, in which one of the layer with the first metal and the layer with the second metal, of the other one of the semiconductor chip mounting area and the back surface of the semiconductor chip; and forming a layer which includes an alloy with the first metal and the second metal after positioning the semiconductor chip in the semiconductor chip mounting area to bond the semiconductor chip with the semiconductor chip mounting area.

Semiconductor device and power source device

Semiconductor device, manufacturing method of semiconductor device, and power source device

A plated structure is disclosed that includes a base formed of a copper-based material containing copper as a major component, a plating film formed of a tin-based material containing tin as a major component and provided over the base, and a tin-copper compound barrier film located at the boundary between the base and the plating film. The density of the tin-copper compound barrier film is greater than that of copper.

Whiskerless plated structure and plating method

A conductive composition layer, conductive particles as a raw material, a conductive composition therefor, a manufacturing method of the conductive composition layer, etc. are provided wherewith heat conductance can be accelerated between electronic devices or electronic devices can be electrically connected. The conductive composition layer is formed by subjecting to heat treatment at a temperature lower than 230&#xb0; C. a conductive composition comprising conductive particles having a metal base material and a metal coating material thereon as well as a thermosetting resin having a curing temperature that is lower than 230&#xb0; C. and/or a thermoplastic resin having a melting point that is lower than 230&#xb0; C.

Growing community of inventors

Atsugi, Japan

Kozo Shimizu