Hitachi, Ltd.

Renesas Technology Corp.

Hitachi Vlsi Engineering Corp.

Hitachi Ulsi Engineering Corp.

Kozo Sakamoto

Isao Yoshida

Nobuyoshi Matsuura

Masaki Shiraishi

Kyouichi Takagawa

Toshiaki Ishii

Takayuki Iwasaki

Masashi Koyano

Shigeo Otaka

Hideki Tsunoda

Mutsuhiro Mori

Yoshito Nakazawa

Tomoaki Uno

Atsuo Watanabe

Tomoichi Kamo

Akihiro Miyauchi

Katsumi Ishikawa

Masatoshi Morikawa

Hidekatsu Onose

Masayoshi Kobayashi

Masaru Kadoshima

Tetsuo Iijima

Takasumi Ohyanagi

Sunao Funakoshi

Kazushige Kohno

Toshiya Doi

Shigeoki Nishimura

Yosuke Inoue

Shigeo Ohtaka

Eiji Yanokura

Seizi Koike

Harutora Shono

Ken Uchid

A driver circuit that lowers the dependence of the loss in the wide gap semiconductor device upon the temperature is provided. A gate driver circuit for voltage driven power semiconductor switching device includes a power semiconductor switching device, a driver circuit for supplying a drive signal to a gate terminal of the switching device with reference to an emitter control terminal or a source control terminal of the switching device, and a unit for detecting a temperature of the switching device. The temperature of the power semiconductor switching device is detected, and a gate drive voltage or a gate drive resistance value is changed based on the detected temperature.

Driver circuit for switching device

A synchronous rectifying drive type semiconductor circuit wherein voltages between drains and sources of power switching elements are detected, temporarily held and compared with a reference voltage. First control signals are generated for turning on the power switching elements depending on comparison result and dead times for the power switching elements are minimized by ORing first control signals and second control signals inputted at input terminals. The first control signals cause the power switching elements to be in 'on' state for a constant time until the second control signals as 'on' control signals arrive at the input terminals, and then the first control signals as &#x201c;on&#x201d; control signals are terminated before the second control signals as &#x201c;off&#x201d; signals arrive at the input terminals, thereby swiftly turning off the power switching elements by the second control signals arriving at the input terminals.

Semiconductor circuit

A power semiconductor device, having a first semiconductor region, and a second semiconductor region; mounted with a first electrode pad on a semiconductor substrate main surface at the inside surrounded by the third semiconductor region, mounted in the second semiconductor region, and a multilayer substrate having first and second wiring layers, to take out an electrode of the semiconductor chip; joining the first wiring layer part for the first electrode, mounted on the multilayer substrate, in a region opposing to the semiconductor substrate main surface at the inside surrounded by the third semiconductor region, and the first electrode pad, by a conductive material; joining the first wiring layer part for the first electrode, and the second wiring layer at a conductive part; and extending the second wiring layer to the outside of a region opposing the semiconductor substrate main surface at the inside surrounded by the third semiconductor region.

Power semiconductor device

A semiconductor circuit suitable for normally-on switching elements or switching elements low in threshold voltage. A negative power supply is charged by a high-voltage power supply. A high-voltage switch controls the advisability of applying a voltage to a high-voltage terminal. With deducing the power supply to power switching elements, the high-voltage switch is turned off, and even in the case where the voltage of the controlling circuits of the power switching elements is reduced, the power supply capacitors for the controlling circuits are charged by the high-voltage terminal thereby to operate the controlling circuits. Further, a negative power source voltage generating circuit utilizes the energy charged to the capacitors from output terminals. A voltage terminal is inserted between the high-voltage terminal and a reference voltage terminal. The negative power source voltage generating circuit is interposed between the voltage terminal and a plurality of the output terminals.

The gate resistance of a power MOSFET in a semiconductor chip is reduced and the reliability and yield of the gate of the power MOSFET are improved The semiconductor chip includes two or more control electrode pads functioning as control electrodes for a power semiconductor device formed within a semiconductor chip. The two or more control electrode pads are distributed within the periphery of the gate area of the power semiconductor device such that the gate resistance of the power semiconductor device can be reduced. The two or more control electrode pads are connected via bumps or a conductive bonding material to an electrode layer of a multilayer circuit board disposed outside the semiconductor chip.

Power MOSFET with reduced dgate resistance

In a power supply of a synchronous rectification type, the self-turn on phenomenon of MOSFET is suppressed without increase of the drive loss to thereby improve the power efficiency. In a synchronous rectifier circuit, a threshold value of a commutation MOSFET is made higher than that of a rectification MOSFET and particularly a threshold value of a commutation MOSFETis made 0.5V or more higher than that of a rectification MOSFET. The threshold value of the rectification MOSFETis lower than 1.5V and the threshold of the commutation MOSFETis higher than 2.0V.

Synchronous rectifier circuit and power supply

Disclosed is a technique capable of improving a power supply efficiency in a power supply circuit. A power MOSFET in a high side of a combined power MOSFET constituting a DC-DC converter is constituted of a horizontal MOSFET, and a power MOSFET in a low side thereof is constituted of a vertical MOSFET.

Semiconductor device

In a semiconductor device having a first terminal (source terminal) and a second terminal (drain terminal), the substrate main surface of a semiconductor chip is on the ( ) face, the main contact face of an n-type region and a p-type region is the &lcub; &rcub; face perpendicular to the ( ) face, elongated n-type regions and elongated p-type regions , which are arranged alternately, form a voltage holding area. The first terminal is connected to the p-type regions through wiring, and the second terminal is connected to the n-type regions . Also, the p-type region is formed to cover the bottom comers of a gate polycrystalline silicon layer

A semiconductor apparatus such as a power MOSFET, an IGBT, or the like is provided having therein a control circuit such as an over-heating protection circuit and an over-current protection circuit, which realizes both of high-speed operation and prevention of erroneous operation caused by a parasitic device. To prevent erroneous operation, the control circuit controls so that when the voltage of a gate terminal is positive relative to that of a source terminal, a first switch circuit is turned on, when the voltage of the gate terminal is negative relative to that of the source terminal, a second switch circuit is turned on, and when the gate terminal and the source terminal have an almost same potential and a drain terminal has a high potential, the second switch circuit is turned on, thereby reducing leakage current from the drain terminal to the gate terminal.

Insulated gate type semiconductor apparatus with a control circuit

Plural grooves are formed in a main surface of semiconductor layers on semiconductor substrate, and gate layers connected to a gate electrode are formed in the plural grooves through a gate insulating film, and then a body diffusion layer is formed between the gate layers, and afterwards, a source diffusion layer connected to a source electrode and a source diffusion layer connected to a source electrode are formed in an identical process.

Insulated gate type semiconductor device and method of manufacturing thereof

A sodium-sulfur battery in which sulfur and/or sodium polysulfide are used as cathode active materials, and an electronic conductor, which are arranged in a cathode chamber between a cathode container operating concurrently as a cathode electric collector and a solid electrolyte tube, and a layer, made of a material having a superior corrosion resistance against sulfur and sodium polysulfide, is provided between said solid electrolyte tube and said electronic conductor, wherein the cathode electric collector as the electronic conductor has been improved.

Sodium-sulfur secondary battery

There is disclosed a semiconductor apparatus such as a power MOSFET, an IGBT, or the like having therein a control circuit such as an over-heating protection circuit and an over-current protection circuit, which realizes both of high-speed operation and prevention of erroneous operation caused by a parasitic device. In order to prevent erroneous operation of a power MOSFET 30 and a protection circuit 21 caused by a parasitic npn transistor 29 of an MOSFET 32, a control circuit 20 controls so that when the voltage of a gate terminal 2 is positive relative to that of a source terminal 3, a switch circuit SW3 is turned on, when the voltage of the gate terminal 2 is negative relative to that of the source terminal 3, a switch circuit SW2 is turned on, and when the gate terminal 2 and the source terminal 3 have an almost same potential and a drain terminal 1 has a high potential, the switch circuit SW2 is turned on. By adding such a control circuit, an insulated gate semiconductor apparatus having therein the protection circuit according to the invention can reduce a leakage current flowing from the drain terminal to the gate terminal when a negative voltage is applied to the gate and can operate at high speed without causing drop of a drain breakdown voltage.

Growing community of inventors

Hitachinaka, Japan

Kozo Sakamoto