Nec Corporation

Kozo Orihara

Takashi Sato

Takashi Nakano

Masayuki Furumiya

Keisuke Hatano

Nobukazu Teranishi

Shinichi Kawai

Takao Tamura

Ichiro Murakami

Chihiro Ogawa

Yasuaki Hokari

Akiyoshi Kohno

Nobuhiko Mutoh

Michihiro Morimoto

Kouichi Arai

Shinobu Suwazono

Hiroaki Utsumi

Shunt wirings (12) in the form of a conductive light intercepting film which covers over vertical CCD registers and also serves to supply power, project into locations between adjacent photoelectric transducers (11) in the vertical direction, and the distance between the projecting portions of adjacent ones of the metal wirings is set to 0.2 .mu.m or less and is limited to a distance with which an electric field between adjacent ones of the metal wirings is 10.sup.7 V/cm or less and the adjacent metal wirings do not suffer from short-circuiting.

Solid state imaging apparatus having a plurality of metal wirings for

Signal charges are photoelectrically generated by a plurality of photodiodes, transferred through a transfer register to a charge detection capacitance and sensed through a floating junction, as a potential change of the charge detection capacitance to be amplified and output at an output amplifier composed of a plurality of stages of driver transistors, in which a field insulation film of a first stage driver transistor is formed, under a gate electrode, with a trapezoidal region left so that the gate electrode has a width thereof varied to be wider at a source end than at a drain end, permitting an increased reduction of the charge detection capacitance.

Solid state image sensor

The solid state, image pickup device of the present invention includes a set of vertical registers. Each of the vertical registers includes a transfer channel and a group of transfer electrodes driven by a vertical driving pulse and formed by crossing the transfer channel, and the group of transfer electrodes includes at least one first transfer electrode and at least one second transfer electrode. Each of the vertical registers includes first contacts which electrically connect the group of transfer electrodes to the intermediate layer of polysilicon and second contacts which electrically connect the intermediate layer of polysilicon to the aluminum wiring layer. The first contacts and the second contacts are respectively formed over the group of transfer electrodes.

Solid state pickup device with strap line in vertical register

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Tokyo, Japan

Kozo Orihara