Fujitsu Semiconductor Limited

Fujitsu Corporation

Fujitsu Microelectronics Limited

Kozo Ogino

Hiromi Hoshino

Morimi Osawa

Takashi Maruyama

Teruyoshi Yao

Masahiko Minemura

Masaaki Miyajima

Hiroshi Takita

Kanji Takeuchi

Seiji Makino

Yasuhide Machida

Hajime Aoyama

Noboru Sugiyama

A method includes: generating electron beam exposure data, used for electron beam exposure, from design data of a semiconductor device; extracting differential information indicating a difference in shape between an electron beam exposure pattern formed on a substrate through electron beam exposure on the basis of the electron beam exposure data and a photoexposure pattern formed on the substrate through photoexposure on the basis of the design data of the semiconductor device; determining whether the size of the difference in shape between the electron beam exposure pattern and the photoexposure pattern falls within a predetermined reference value; acquiring shape changed exposure data by changing the shape of the pattern of the electron beam exposure data in accordance with the differential information and updating the electron beam exposure data; and repeating the differential extraction, the determination and the updating when the size of the difference falls outside the predetermined reference value.

Data generation method for semiconductor device, and electron beam exposure system

An exposure method includes generating a reticle exposure pattern based on a target pattern, performing a lithography simulation based on the reticle exposure pattern to generate a simulation pattern that simulates a resist pattern formed by reticle exposure, generating differential data between the target pattern and the simulation pattern, generating a first electron-beam exposure pattern based on the differential data, generating a reticle based on the reticle exposure pattern, performing an optical exposure process with respect to a resist by use of the reticle, and performing an electron-beam exposure process with respect to the resist based on the first electron-beam exposure pattern.

Exposure method and method of making a semiconductor device

A charged particle beam exposure method that includes preparing of exposure data for a plurality of device patterns; obtaining of an integral of forward scattering components in an exposure intensity distribution with each of the device patterns near the center of the exposure intensity distribution as domain of integration; correcting of the shape of each of the plurality of device patterns by correcting the exposure data, so that the integral is equal to a reference value; and appropriating of mask patterns within an exposure mask to each of the device patterns following the correction, such that the center of gravity of each of the device patterns matches the center of gravity of the mask pattern appropriated thereto.

Exposure method using charged particle beam

A method for preparing data for exposure includes forming a first plurality of rectangular patterns from a reticle preparing rule; lining an object pattern for performing reticle exposure with the first rectangular patterns, and extracting a second plurality of rectangular patterns, disposed in an N&#xd7;N matrix, from the first plurality of rectangular patterns in the object pattern; and performing a violation detecting treatment and a correcting treatment of the pattern width and the pattern distance of the reticle exposure pattern on the basis of the distance between the second plurality of rectangular patterns.

Preparing data for hybrid exposure using both electron beam exposure and reticle exposure in lithographic process

A parameter extracting method capable of accurately and effectively extracting parameters used for charged particle beam exposure. The method comprises the steps of forming an unknown parameter layer on a known parameter layer, forming a resist on the unknown parameter layer, subjecting the resist to exposure through patterns changed in an existing range, and extracting parameters of the unknown parameter layer using the exposure result. In the parameter extraction method, parameters of layers lower than the unknown parameter layer are known. Therefore, layer combinations to be considered and the number of experimental data can be drastically reduced. After parameter extraction of the unknown parameter layer, an unknown parameter layer is newly formed on the layer. Then, the parameter thereof is extracted in the same manner. Thus, the parameter is extracted sequentially from lower layers and therefore, the parameter in the multitiered structure having various layer combinations can be accurately and effectively extracted.

Parameter extracting method

A method for manufacturing a semiconductor device or a photomask by exposing a pattern while scanning a plurality of deflection regions determined depending on a deflection width of an exposure device on an exposure target with electron beams, enables a computer to execute a step of extracting a first pattern that exists near the boundary of the deflection region and in a first deflection region, a step of searching a second pattern that is adjacent to the first pattern and in a second deflection region different from the first deflection region, and a step of performing data processing of exposure data in accordance with a width of the first pattern so as to minimize the change in distance between the extracted first pattern and the searched second pattern due to positional deviation of the deflection region.

Method for manufacturing semiconductor device or photomask

In the exposure data preparation method for charged particle beam exposure in which an exposure object is exposed while dose is adjusted for each pattern, the method including the steps of: classifying a pattern in terms of a target linewidth; setting a standard characteristic showing the relationship between a standard dose and a resultant linewidth of a resist pattern for a group of patterns having the target linewidth; and preparing exposure data by correcting a shape and dose so that a characteristic showing the relationship between dose of each pattern having the target linewidth and a resultant linewidth of a resist pattern follows the standard characteristic.

Exposure data preparation method and exposure method

A deposition energy distribution when a charged particle beam is made incident upon a resist film, is approximated by a sum of element distributions having Gaussian distributions. A pattern area density map partitioning the pattern layout plane into small regions, is defined for each element distribution. First and second sub-steps are repeated for each of the pattern area density maps. In the first sub-step, an area density of each small region is obtained. In the second sub-step, in accordance with an energy deposition rate, an exposure dose assigned to a pattern in a first small region, an area of the pattern and the area density of the first small region, the deposition energy to be given to the target small region is obtained and the corrected area density is calculated. A deposition energy at an evaluation point on a pattern layout plane is calculated from the corrected area densities.

Charged particle beam projection method

An exposure data generator for generating exposure data representing graphical information of a pattern to be exposed and a computer-readable recording medium are provided. The generator includes a storage device for storing pre-correction exposure data which include information on positions and sizes of patterns placed within an target region and a search device for classifying the patterns according to placement positions within the target region, searching for a pattern which is another pattern by using the classified patterns, and storing information on the patterns. The generator also includes a back-scattering intensity calculation device for calculating a back-scattering intensity from at an evaluation point on the pattern. The generator also includes a movement quantity calculation device for calculating a movement quantity of a side of a pattern.

Exposure data generator and method thereof

Exposure verification is applied to exposure data indicating a pattern to be exposed by a charged particle beam. If an error point is extracted from the exposure data by the exposure verification, the values of coefficients are modified and exposure data is regenerated taking into consideration the coefficients whose values have been modified. Thus, exposure data is re-generated by changing each of the coefficient values within its appropriate range.

Exposure data generation method and device, exposure data verification method and device and storage medium

A plurality of patterns placed within an target region are classified by their placement positions, a pattern adjacent to each side of each pattern is searched for by using the classification results, and adjacent pattern information is obtained. Next, a back-scattering intensity at an evaluation point on a pattern is calculated, a movement quantity of the side is calculated so that the sum of a forward-scattering intensity and the back-scattering intensity at the evaluation point becomes a reference exposure intensity by using the adjacent pattern information and the back-scattering intensity, and the pattern is then corrected.

A pattern size correcting device includes: a testing photomask () having a test pattern; a quantifying unit () that quantifies, using the testing photomask (), size variation in the test pattern as a function of distance and in relation to an open area ratio; an open area ratio calculating unit () that divides an exposure area having a plurality of actual device patterns into a plurality of correction areas and calculates the open area ratio of the respective correction areas; a data correcting unit () that inputs the open area ratio calculated by the open area ratio calculating unit () into a result of the quantification that uses the photomask (), calculates size variations of the actual device patterns in the respective correction areas, and corrects design data of the actual device patterns based on the calculation; and a proximity effect correcting unit correcting a proximity effect. This correcting device enables quantitative estimation of size variation occurring in a pattern exposed in lithography and easy and accurate correction of pattern size based on the estimation.

Pattern size correcting device and pattern size correcting method

A method for generating backscattering intensity with which charged particles are backscattered to a resist layer when charged particle beam is irradiated onto the resist layer which is formed on plural layers, each of which includes a pattern of one substance or a plurality of substances. For the nlayer from the resist layer among the plural layers, there is provided, for each of the substances in the nlayer, a reflection coefficient rn, which corresponds with the number of particles reflected by the nlayer; a transmission coefficient tn, which corresponds with the number of particles transmitted by the nlayer; and a scatter distribution in which the charged particles are scattered within the nlayer. The generation method comprises a first step of generating the backscattering intensity by using the reflection coefficient rn, the transmission coefficient tn, and the scatter distribution.

Method for generating backscattering intensity on the basis of lower layer structure in charged particle beam exposure, and method for fabricating semiconductor device utilizing this method

(S ) A reference forward scattering intensity &egr; is determined as equal to such a slice level that by adjusting the width of a pattern having the minimum width included in a block pattern repeatedly used and collectively exposed, the slice level that is in the range of 30 to 70% of the peak value of a forward scattering intensity distribution of the pattern becomes equal to the design width of the pattern. (S ) in each pattern in the block pattern a pattern width is adjusted such that the width of a forward scattering intensity distribution at &egr; becomes equal to the design width of the pattern. Further, a collected exposure dose Qcp is determined such that Qcp(&egr; &plus;&agr; &prime;&eegr;)&equals;Eth holds, where Eth is a threshold value for pattern developing, q is a backscattering coefficient and &agr; &prime; is an effective pattern area density. In an electron projection method, Eth is determined in &egr; &plus;&agr; &prime;&eegr;&equals;Eth, then &agr; &prime; is determined, and a pattern width is determined from a function &egr; of a design width and a pattern width.

Rectangle/lattice data conversion method for charged particle beam exposure mask pattern and charged particle beam exposure method

The invention is a charged particle beam exposure method, wherein exposure data having exposure pattern data is generated from pattern data, and a material is exposed accoring with the exposure data; comprising the steps of: (a) generating plural correction areas with respect to the patterns; (b) dividing a long and narrow pattern of the pattern data into a plurality of patterns; (c) determining a pattern area density within the correction areas, and revising the pattern density of the correction area according with surrounding patterns; (d) determining a main quantity of exposure for each divided pattern according with the highest corrected pattern density; (e) generating supplementary exposure patterns in the correction areas within the divided patterns with a shortage of exposure energy in the case of the main quantity of exposure. An optimum main quantity of exposure is determined for each divided pattern to reduce the number of supplementary exposure patterns.

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Kawasaki, Japan

Kozo Ogino