Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Kozo Murakami

Yuki Satoh

Toru Sakuragawa

Kunihiro Fujii

Satoshi Matsuo

Ryoichi Takayama

Takafumi Koga

Toshio Ishizaki

Toru Yamada

Tetsuya Tsurunari

Kazunori Nishimura

Masahiro Takada

Toru Yamaji

Koji Kawakita

Eiji Kawamoto

Shigeru Tsuzuki

Koji Hashimoto

Hiroshi Takahashi

Mitsuhiro Furukawa

Naoki Yuda

Yoshiharu Omori

Masaaki Hayama

Ryouichi Takayama

Tetsuhiro Korechika

Tetsuo Kawasaki

Yuki Sato

Katsuya Fujii

An elastic wave device has the following elements: a piezoelectric substrate; an inter-digital transducer (IDT) electrode disposed on the piezoelectric substrate; internal electrodes disposed above the piezoelectric substrate and electrically connected to the IDT electrode; side walls disposed above the internal electrodes surrounding the IDT electrode; a cover disposed above the side walls so as to cover a space above the IDT electrode; an electrode base layer disposed on the internal electrodes outside the side walls; and connection electrodes disposed on the electrode base layer. Each connection electrode has a first connection electrode disposed on the electrode base layer, and a second connection electrode disposed on the first connection electrode. The horizontal sectional shape of the second connection electrode is non-circular.

Elastic wave device and electronic device using the same

An electronic component, in which a chip can be mounted on a certain predetermined place of the package at a high accuracy level, which package having a stepped level-difference in the inner wall of a cavity. The package is provided with a stepped level-difference in the inner wall surface, and an internal contact electrode formed on the upper surface of the stepped level-difference. At the bottom of the package is a shield electrode, on which a chip is mounted via an adhesion layer. The chip and the internal contact electrode are electrically connected by an interconnection wire. Location aligning for the chip and the interconnection wire, at least either one of these, is conducted by making use of a region, which is non-electrode portion, provided on the inner bottom surface of the package.

Electronic component and method for manufacturing the same

A hybrid radio frequency (RF) switching device includes first to fourth ports, a diode coupled between the first port and second port, a first transmission line having a length of &#x3bb;g/4 (where &#x3bb;g is a wave length of a frequency in a first frequency band), and a first element coupled in series with the first transmission line having an almost simple reactance component and nearly opening in a second frequency band. The first transmission line and first element are coupled in series between the second port and third port. The device further includes a second transmission line having a length of &#x3bb;d/4 (where &#x3bb;d is a wavelength of a frequency in the second frequency band), and a second element having an almost simple reactance component and nearly opening in the first frequency band. The second transmission line and second element are coupled in series between the second port and fourth port.

High-frequency composite switch component

An antenna duplexer has a power durability to a signal input from an antenna terminal and has stable characteristics. The antenna duplexer includes an input terminal, a transmission filter including a surface acoustic wave (SAW) filter having an input port connected to the input terminal, a phase shifter having an input port connected to an output port of the transmission filter, a reception filter having an input port connected to an output port of the phase shifter, an output terminal connected to the output port of the reception filter, and an antenna terminal connected between the transmission filter and the phase shifter. The transmission filter has a power durability at the output port of the filter, being equal to or larger than a power durability at the input port of the filter.

Antenna duplexer

A method of manufacture of a surface acoustic wave device which includes a step of applying a photosensitive film resist on a substrate and forming a photosensitive film resist layer over at least a portion of a surface of the substrate; a step of forming acoustic absorbers only at the two sides orthogonal to the direction of the surface acoustic wave transmission; a step of placing in a package a surface acoustic wave element obtained by cutting and dividing the substrate and electrically connecting a connection electrode of the surface acoustic wave element with an external terminal of the package; and a step of sealing an opening of the package with a lid, wherein the main surface of the acoustic absorbers is formed parallel to the surface of the substrate.

Method of manufacturing a surface acoustic wave device

An electronic component, in which a chip can be mounted on a certain predetermined place of the package at a high accuracy level, which package having a stepped level-difference in the inner wall of a cavity. The package is provided with a stepped level-difference in the inner wall surface, and an internal contact electrode formed on the upper surface of the stepped level-difference . At the bottom of the package is a shield electrode , on which a chip is mounted via an adhesion layer . The chip and the internal contact electrode are electrically connected by an interconnection wire . Location aligning for the chip and the interconnection wire , at least either one of these, is conducted by making use of a region , which is non-electrode portion, provided on the inner bottom surface of the package

A small-sized multi-frequency antenna duplexer using surface acoustic wave filters to be applicable to a plurality of frequencies. This antenna duplexer includes two surface acoustic wave (SAW) filters for transmission and reception having passing bands of mutually different frequencies, a phase shift substrate, and a package for accommodating them. The passing band of each antenna duplexer is mutually different from other's passing band. This multi-frequency antenna duplexer includes a plurality of antenna duplexers. In one package, transmitter surface acoustic wave filters, receiver surface acoustic filters, and phase shift substrates are mounted. Thus, the multi-frequency antenna duplexer are reduced in size.

Multi-frequency antenna duplexer

A small radio-frequency hybrid switch module is provided for switching between transmitted signals and received signals in plural frequency bands. This module includes: a laminated body including a dielectric layer; a diplexer; a switching circuit; a low pass filter (LPF); a conductive pattern provided on the dielectric layer for forming at least one of the diplexer, the switching circuit and the LPF; a surface acoustic wave (SAW) filter mounted on the laminated body; a cover provided on the SAW filter for forming a cavity which allows surface acoustic wave vibration and for hermetically sealing the cavity; and a semiconductor switching device mounted on the laminated body for forming a part of the switching circuit.

Radio-frequency hybrid switch module

An electronic component having recesses on side faces of its package for housing an electric element therein. A metal layer that does not reach the bottom end of the package is formed on the surface of the recess. The metal layer has excellent wettability to a brazing material and helps extra material flow into the recess easily. In addition, the interface between the top end face of the recess and the side face is curved to make the brazing material flow into the recess easily. When the opening of the package is sealed with a lid using the brazing material, the extra brazing material flows into the recess. This prevents the brazing material from protruding outside of the package and thus improves dimensional accuracy of the electronic component. Therefore, mounting accuracy of the electronic component can be improved and short circuit can be prevented.

Electronic component and electronic equipment using the same

A SAW element ( ) is formed of a piezoelectric substrate ( ), on which are provided IDT electrodes ( ), connection electrodes ( ), underlying metal layers ( ), and acoustic materials ( ) placed on the underlying metal layers ( ) and having surfaces parallel to the main surface of the piezoelectric substrate ( ). The SAW element is mounted in a package ( ), which is provided with external terminals ( ) connected with the connection electrodes ( ), and the package is hermetically sealed with a lid ( ) to form a SAW device. When such a SAW element ( ) is mounted faceup in a package ( ) using a vacuum chuck ( ), its piezoelectric substrate ( ) can be protected against damage. When a SAW element ( ) provided with bumps ( ) on its connection electrodes ( ) is mounted facedown in a package ( ), the failure of electrical connections can be prevented.

Surface acoustic wave device and method of manufacture thereof

A band switching filter includes a resonator circuit having a surface acoustic wave resonator, a switching element and an impedance element. The filter selectively passes or attenuates a signal through one of two pass bands using a single filter. The resonant frequency of the resonator circuit can be shifted to another frequency by selectively connecting the surface acoustic wave resonator to an impedance element using a switching element.

Band switching filter using a surface acoustic wave resonator and an antenna duplexer using the same

Saw filter antenna sharing device using the same, and mobile communication terminal using the same

The present invention relates to a surface acoustic wave (SAW) filter which is used for cellular phones and other mobile communication equipment. The object of the present invention is to realize a SAW filter of which attenuation characteristics and pass characteristics can be set arbitrarily. The SAW filter of the present invention comprises comb-shaped electrodes facing each other disposed on the same piezoelectric substrate, at least two resonators with an input and output terminals, and an equivalent transmission line which is connected between an output terminal of a first resonator and an input terminal of a second resonator. The phase of the transmission line can be adjusted from 5 degrees to 175 degrees arbitrarily at the series resonance frequency of the resonators. This structure realizes a band-stop filter or a band-pass filter whose attenuation characteristics and pass characteristics can be set arbitrarily.

Surface acoustic wave filter utilizing a transmission line with phase characteristics that increase filter out of band attenuation

A SAW resonator disposed with an IDT electrode and reflector electrodes is formed on the surface of a piezoelectric substrate. Three pieces of the SAW resonator form an acoustic coupling by being disposed close to each other, electrode fingers comprising the IDT electrode in the center are all grounded, and IDT electrode fingers are electrically independent on the side to be connected to input-output terminals of the IDT electrodes disposed outside. As a result, three excitation modes having different propagation frequencies are generated which are used to attain a broad band SAW resonator filter. When these three pairs of the IDT electrode are electrically independent, a balanced input-output can be achieved, and excellent out-of-band rejection characteristics can be obtained.

Growing community of inventors

Osaka, Japan

Kozo Murakami