Renesas Electronics Corporation

Mitsubishi Electric Corporation

Renesas Technology Corp.

Jfe Steel Corporation

Nkk Corporation

Mitsubishi Denki Kabushiki Kaisha

Kozo Harada

Shinji Baba

Eiji Hayashi

Kyo Go

Hiroyuki Harada

Takashi Nishimura

Shoji Yoshikawa

Yoshimasa Funakawa

Toshihiro Iwasaki

Michitaka Kimura

Mitsuaki Uesugi

Tsutomu Kawamura

Yuma Honda

Akira Kazama

Takahiko Oshige

Masaki Taya

Masaichi Inomata

Masahiro Iwabuchi

Shinichi Tomonaga

Shuji Kaneto

Shuichi Harada

Shigemi Fukuda

Osamu Uehara

Hajime Tanaka

Yasuo Kushida

Tsuneo Suyama

Hiroyuki Sugiura

Koji Yamada

Yasunobu Nagataki

Ken Sakamoto

Haruko Hitomi

Yoshihiro Yamaguchi

Masaki Watanabe

Satoshi Yamada

Yasushi Tanaka

Yoshihiko Ono

Kohei Hasegawa

Akio Kobayashi

Yoshitaka Otsubo

Rei Yoneyama

Satoru Wakiyama

Kenji Fujiwara

Masatoshi Yasunaga

Yuji Shirakata

Kunikazu Tomita

Toshiaki Urabe

Kei Yamamoto

Hiroki Shiota

Yusuke Kimata

Seiki Hiramatsu

Kazuhiro Tada

Koichiro Fujita

Junichi Nakashima

Isao Oshima

Fusato Kitano

Yusuke Kaji

Yo Tanaka

Toru Inazumi

Shogo Sato

Tomohisa Yamane

Masayuki Mafune

Shunsaku Node

Kunihiko Tajiri

Hiroshi Sawano

Hisanori Ando

Rena Kawahara

The power module includes: a heat spreader having a plate shape and having heat conducting property; a semiconductor element at least thermally connected to a one-side surface of the heat spreader; a highly-heat-dissipating insulation adhesive sheet having a plate shape and having a one-side surface thermally connected to an other-side surface of the heat spreader; a metal plate having a one-side surface thermally connected to an other-side surface of the highly-heat-dissipating insulation adhesive sheet; and a sealing resin member sealing the semiconductor element, the heat spreader, the highly-heat-dissipating insulation adhesive sheet, and the metal plate in a state where an other-side surface of the metal plate is exposed, wherein the highly-heat-dissipating insulation adhesive sheet is a complex obtained by impregnating, with a resin, a porous ceramic sintered body in which ceramic particles have a gap and have been integrally sintered.

Power module including highly-heat-dissipating insulation adhesive sheet

A power conversion apparatus includes a hermetic housing, a power semiconductor module, and dry gas. The hermetic housing includes a gas inlet valve and a gas outlet valve. The power semiconductor module is arranged in an internal space in the hermetic housing. The internal space in the hermetic housing is filled with dry gas.

Power conversion apparatus, electric power system for aircraft, and method of controlling power conversion apparatus

A semiconductor module includes a first power semiconductor device, a conductive wire, and a resin film. The conductive wire is joined to a surface of a first front electrode of the first power semiconductor device. The resin film is formed to be continuous on at least one of an end portion or an end portion of a first joint between the first front electrode and the conductive wire in a longitudinal direction of the conductive wire, a surface of the first front electrode, and a surface of the conductive wire. The resin film has an elastic elongation rate of 4.5% to 10.0%.

Semiconductor module and power conversion apparatus

A semiconductor power module includes a base plate, an insulating substrate, a power semiconductor element, an external terminal, a main terminal, a connected body, a case, a highly-insulating voltage-resisting resin material, a sealing resin, and a cover. The main terminal is connected to the connected body. The connected body is directly joined to the metal plate. The connected body is provided with a receiving section in which the main terminal is received. The receiving section is provided with a slit portion. The slit portion extends from a lower end side of the receiving section toward an upper end side thereof. The lower end side is located on a side close to the insulating substrate. The upper end side is located opposite to the side close to the insulating substrate.

Semiconductor power module and power conversion device

The conductive wire is bonded to the front electrode of the semiconductor device at the bonding section. The first resin member covers at least one end portion of two end portions of the bonding section, the first surface of the front electrode, and the second surface of the conductive wire. The second resin member covers the bent portion of the first resin member. The first resin member has a higher break elongation and a higher break strength than the second resin member. The second tensile elastic modulus of the second resin member is greater than the first tensile elastic modulus of the first resin member. Thereby, the reliability of the power semiconductor module is improved.

Power semiconductor module and power converter

A semiconductor device includes an insulating substrate having a main surface, a semiconductor element, a case member, and a sealing resin as a sealing material. The case member includes a recess that is continuous with a connection portion of the case member connected to the insulating substrate, and that faces the internal region. The recess includes a facing surface as an inner wall portion facing the main surface of the insulating substrate. A distance from the main surface of the insulating substrate to the facing surface as the inner wall portion is greater than a distance from the main surface to an upper surface of the semiconductor element.

Semiconductor device

A high-strength steel sheet having high yield ratio, excellent stretch flange formability, and resistance to secondary working embrittlement. The steel sheet has a composition containing C: 0.02% to less than 0.10%, Si: less than 0.3%, Mn: less than 1.0%, P: 0.10% or less, S: 0.020% or less, Al: 0.01% to 0.10%, N: 0.010% or less, and Nb: 0.003% to less than 0.070% on a mass basis, the remainder being Fe and inevitable impurities. A steel microstructure of the steel sheet contains ferrite: 90% or more and a total of pearlite, martensite, retained austenite, and cementite: 0% to 10% on an area fraction basis, in which the average grain size of the ferrite is 15.0 &#x3bc;m or less, and in which the average aspect ratio of the ferrite is 1.2 or more; and a tensile strength of 500 MPa or less.

High-strength steel sheet and method for manufacturing the same

A semiconductor device including: an insulating substrate having a conductor layer on the upper face and the lower face and a semiconductor element mounted on the upper conductor layer; a base plate bonded to the lower conductor layer; a case member surrounding the insulating substrate and bonded to the surface of the base plate to which the conductor layer bonded to the lower face; a first filler being a silicone composition filled in a region surrounded by the base plate and the case member; and a second filler being injected into a region below the first filler and surrounding a peripheral edge portion of the insulating substrate, whose height from the base plate is higher than the upper face and is lower than a bonding face between the semiconductor element and the upper conductor layer.

Semiconducter device with filler to suppress generation of air bubbles and electric power converter

A semiconductor device includes: an insulating substrate having an upper surface on which a semiconductor element is mounted; a base plate joined to a lower surface of the insulating substrate; a case member that surrounds the insulating substrate and that is in contact with a surface of the base plate to which the insulating substrate is joined; a sealing resin provided in a region surrounded by the base plate and the case member; a cover member facing a surface of the sealing resin and fixed to the case member; and a holding plate, a lower surface of the holding plate and a portion of a side surface of the holding plate being in close contact with the surface of the sealing resin, an upper surface of the holding plate being fixed to and protruding from a surface of the cover member facing the surface of the sealing resin.

Semiconductor device and method for manufacturing same

Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.

Semiconductor device and method of manufacturing the same

A high-strength steel sheet having a high yield ratio and excellent stretch flangeability, and a method for producing the high-strength steel sheet. The high-strength steel sheet has a composition containing, by mass: C: 0.02% or more and less than 0.10%, Si: less than 0.10%, Mn: less than 1.0%, P: 0.10% or less, S: 0.020% or less, Al: 0.01% or more and 0.10% or less, N: 0.010% or less, Nb: 0.005% or more and less than 0.070%, and the balance being Fe and inevitable impurities; and a microstructure including, by area: ferrite: 85% or more, pearlite: 0% to 15%, and a total of martensite, retained austenite and cementite: 0% to 3%. The average crystal grain diameter of the ferrite is 15.0 &#x3bc;m or less. The grain diameter of a Nb carbide is 5 to 50 nm. The amount of Nb carbide precipitate is 0.005% to 0.050% in terms of volume fraction.

High-strength steel sheet and method for producing the same

A high-strength steel sheet having a high yield ratio and a reduced difference in strength between the center and edges of the steel sheet in the width direction. The high-strength steel sheet includes a composition containing, by mass, C: 0.02% or more and less than 0.10%, Si: less than 0.10%, Mn: less than 1.0%, P: 0.10% or less, S: 0.020% or less, Al: 0.01% or more and 0.10% or less, N: 0.010% or less, Nb: 0.005% or more and less than 0.070%, and the balance being Fe and inevitable impurities. Additionally, the steel sheet has a microstructure including, by area, ferrite: 90% or more, pearlite: 0% to 10%, and the total of martensite, retained austenite, and cementite: 0% to 3%. The average crystal grain diameter dof the ferrite at the center of the steel sheet in the width direction is 15.0 &#x3bc;m or less.

The power module includes: an insulating substrate having an upper surface on which a semiconductor element is mounted; a base plate joined to a lower surface of the insulating substrate; a case member surrounding the insulating substrate and adhered to the base plate; a sealing resin provided in a region surrounded by the base plate and the case member, so as to seal the insulating substrate; and a holding plate projecting from an inner wall of the case member to above an outer peripheral portion of the insulating substrate, the holding plate being fixed to the inner wall, the holding plate being in contact with the sealing resin.

Power module

A power semiconductor device including an insulating substrate having a metal layer formed on an upper surface thereof, a semiconductor element and a main electrode bonded to the metal layer, a metal wire connecting the metal layer with the semiconductor element, a metal member bonded to a lower surface side of the insulating substrate, a case member surrounding the insulating substrate and being in contact with a surface of the metal member bonded to the insulating substrate, and a sealing resin which fills a region surrounded by the metal member and the case member and has a resin strength of 0.12 MPa or higher at room temperature, a microcrystallization temperature of &#x2212;55&#xb0; C. or lower, and a needle penetration of 30 to 50 after storage at 175&#xb0; C. for 1000 hours and seals the insulating substrate, the metal layer, the semiconductor element, the metal wire, and the main electrode.

Power semiconductor device

Growing community of inventors

Tokyo, Japan

Kozo Harada