Canon Kabushiki Kaisha

Kozo Arao

Katsumi Nakagawa

Noboru Toyama

Yusuke Miyamoto

Yuichi Sonoda

Yasushi Fujioka

Masahiro Kanai

Shunichi Ishihara

Yukiko Iwasaki

Akira Sakai

Keishi Saitoh

Tsutomu Murakami

Junichiro Kanbe

Ichiro Saito

Yoichi Osato

Yoshio Takasu

Nagao Hosono

Eiichi Fujii

Isamu Shimizu

Hideo Tamura

Nobuyuki Miyake

Yoshihiro Oguchi

Takaharu Kondo

Takeshi Ohtake

Kazuharu Katagiri

Masafumi Sano

Tadashi Sato

Shunji Nakamura

Kenji Yamagata

Eiichi Inoue

Hideya Kumomi

Tatsuyuki Aoike

Makoto Kitahara

Hiroyuki Tokunaga

Mitsuyuki Niwa

Eiji Takeuchi

Shusei Tsukada

Kazuhara Katagiri

The present invention provides a web conveying apparatus for conveying a web while holding the web and applying tension to the web, wherein the conveying apparatus has a plurality of rollers with which the web contacts to be conveyed, and at least one roller of the plurality of rollers has a mechanism for limiting deformation of the web within Y/E, and a web conveying method using a web conveying apparatus for conveying a web while holding the web and applying tension to the web, wherein the conveying apparatus has a plurality of rollers with which the web contacts to be conveyed, and the web is conveyed while the deformation of the web is limited within Y/E by a mechanism that is provided for at least one roller of the plurality of rollers. The apparatus and the method prevent meandering of the web.

Web conveying apparatus, and apparatus and method for electrodeposition using web conveying apparatus

Disclosed are a process for producing a zinc oxide film comprising the steps of transporting a conductive long substrate via above at least one electrode comprised of zinc in an electrodeposition bath held in an electrodeposition tank and applying an electric field between the electrode and the conductive long substrate, thereby forming a zinc oxide film on the conductive long substrate, the process comprising a first step of forming the zinc oxide film on a part of the conductive long substrate; a second step of stopping the application of the electric field and the transportation; and a third step of bringing at least a region of a part of the conductive long substrate being in contact with the electrodeposition bath in the second step into non-contact with the electrodeposition bath, and an apparatus suitably used for the process. The process and apparatus enables high-quality zinc oxide films to be produced.

Apparatus and process for producing zinc oxide film

The present process for electrodepositing a zinc oxide film comprises the steps of immersing a substrate and an opposing electrode in an electrodeposition bath which contains zinc nitrate and is kept heated, and forming the zinc oxide film on the substrate by passing a current between the substrate and the opposing electrode, wherein the process further includes a step of trapping the particles of zinc oxide precipitated in the electrodeposition bath by circulating or stirring the bath before the formation of the zinc oxide film, whereby the present process can prevent the generated zinc oxide powder from depositing on the surfaces of the substrate and the zinc oxide film formed by electrodeposition when restarting or starting the formation of a zinc oxide film by the electrodeposition using an electrodeposition apparatus, and hence the formation of a uniform zinc oxide film free from defects.

Process for electrodepositing zinc oxide film

Disclosed are an electrodeposition process comprising the steps of transporting a substrate in an electrodeposition bath, and forming a film on the substrate, which process further comprises the step of removing particles from the surface of the substrate; and an electrodeposition apparatus comprising an electrodeposition tank for holding therein an electrodeposition bath, a mechanism for transporting a continuous-length-substrate while holding the substrate thereon, and an opposing electrode, which apparatus further comprises a mechanism for removing particles from the surface of the continuous-length substrate. These can provide a process and an apparatus by and in which dust in the bath or any particles due to film-peeling from electrodes can be prevented from causing difficulties such as impact marks in a film-deposited substrate during its transport, to form a good-quality electrodeposited film.

Process and apparatus for forming zinc oxide film, and process and apparatus for producing photovoltaic device

The method of the present invention is a method of producing a thin film of zinc oxide, which comprises immersing a counter electrode and a conductive substrate as a negative electrode in an aqueous solution containing nitrate ions and 0.05 mol/liter or more of zinc ions, and passing a current between the counter electrode and the conductive substrate to electrochemically deposit zinc oxide on the conductive substrate from the aqueous solution, thereby forming a thin film of zinc oxide, wherein a film forming rate of the thin film is varied at least one time midway during an electrolytic deposition reaction for forming the thin film. The present invention can provide the following meritorious advantages: it is possible to form a texture-structured thin film effective in optical confinement in a short time by using the above electrolytic deposition method advantageous for lowering a production cost, to prevent abnormal growth of a deposited film, to have a film surface excellent in uniformity and adhesion, and to improve photoelectric characteristics and promote mass productivity by applying the present invention to the stacked structure of a photovoltaic element.

Method of producing thin film of zinc oxide, process for manufacturing photovoltaic element using its method, and photovoltaic element

There is disclosed an electrodeposition method capable of suppressing the drop in the power supply voltage and minimizing the heat loss by the electrodeposition current, thereby achieving uniform film formation with satisfactory characteristics. A conductive substrate is dipped in an electrodeposition bath held in an electrodeposition tank, and an oxide is electrolytically deposited on the conductive substrate. An electricity feed means as at least one electrode of the electrodeposition tank is composed of a conductive member so provided as to be in contact with a back surface of the conductive substrate, wherein the contact position of the electricity feed means and the conductive substrate is outside the electrodeposition bath, and wherein the resistance, including contact resistance, between the closer to the electricity feed means of a position of entry of the conductive substrate into the electrodeposition bath and a position of discharge of the conductive substrate from the electrodeposition bath, and the contact position of the conductive substrate with the electricity feed means is 20&OHgr; or less.

Electrodeposition method

This invention provides an electrodeposition apparatus, comprising at least one electrodeposition vessel for supplying a current between a substrate and an electrode in an electrodeposition bath to form an oxide film or the substrate and a rinsing means for rinsing the substrate after passing the electrodeposition tank with water, wherein a humidifying means for preventing drying of at least the film forming surface of the substrate is provided along the transporting path of the substrate at least at the exit side of the electrodeposition vessel and an oxide film forming method. Thus a uniform oxide film without unevenness can be formed on the substrate.

Electrodeposition method of forming an oxide film

A method for forming an indium oxide film on an electrically conductive substrate by immersing the substrate and a counter electrode in an aqueous solution containing at least nitrate and indium ions and flowing an electric current between the substrate and the counter electrode thereby causing indium oxide film formation on the substrate is provided. A substrate for a semiconductor element and a photovoltaic element produced using the film forming method are also provided An aqueous solution for the formation of an indium oxide film by an electroless deposition process, containing at least nitrate and indium ions and tartrate is also disclosed. A film-forming method for the formation of an indium oxide film on a substrate by an electroless deposition process, using the aqueous solution, and a substrate for a semiconductor element and a photovoltaic element produced using the film forming method are further provided.

Aqueous solution for the formation of an indium oxide film by electroless deposition

Provided are a substrate with a zinc oxide layer, in which at least a zinc oxide layer is provided on a support substrate, wherein the zinc oxide layer comprises a zinc oxide layer having the c axis perpendicular to the support substrate and a zinc oxide layer having the c axis slantindicular to the support substrate in the order from the side of the support substrate; and a photovoltaic device in which a semiconductor layer is formed on the substrate with the zinc oxide layer. Thus provided is the inexpensive photovoltaic device with excellent reflective performance and optical confinement effect and with high photoelectric conversion efficiency.

Method for forming a zinc oxide layer and method for producing a photovoltaic device

A film-forming method for forming a cuprous oxide film includes the steps of immersing a substrate having at least an electrically conductive surface in a solution containing copper ion and nitrate ion which are coexistent therein, and causing deposition of the cuprous oxide film on the electrically conductive surface of the substrate by way of cathodic reaction. A process for producing a semiconductor device such as a solar cell or a rectifier also is provided using the film-forming method.

Method for the formation of a cuprous oxide film and process for the production of a semiconductor device using said method

Substrate with zinc oxide layer, method for producing zinc oxide layer, photovoltaic device, and method for producing photovoltaic device

Photovoltaic cell

A method for forming an indium oxide film on an electrically conductive substrate by immersing the substrate and a counter electrode in an aqueous solution containing at least nitrate and indium ions and flowing an electric current between the substrate and the couter electrode, thereby causing indium oxide film formation on the substrate, is provided. A substrate for a semiconductor element and a photovoltaic element produced using the film forming method are also provided. An aqueous solution for the formation of an indium oxide film by an electroless deposition process, containing at least nitrate and indium ions and tartrate, is also disclosed. A film-forming method for the formation of an indium oxide film on a substrate by an electroless deposition process, using the aqueous solution, and a substrate for a semiconductor element and a photovoltaic element produced using the film-forming method are further provided.

Method for the formation of an indium oxide film by electrodeposition

By using an improved back reflecting layer, a photovoltaic cell having excellent migration resistance and a high photoelectric conversion efficiency is provided at high productivity. The photovoltaic cell includes a metal layer comprising a silver-aluminum alloy having a content of silver equal to or less than 30 atomic percent, the rest being aluminum, or a metal layer comprising a copper-aluminum alloy having a content of copper between 30 and 50 atomic percent, the rest being aluminum. It is preferable to form these layers at a relatively low temperature by sputtering, particularly at a temperature equal to or less than 110.degree. C. for the silver-aluminum alloy and at a temperature equal to or less than 120.degree. C. for the copper-aluminum alloy.

A process for stably producing a zinc oxide thin film by electrolysis with excellent adhesion to a substrate is described. In particular, a zinc oxide thin film suitably used as a light confining layer of a photoelectric conversion element is formed on a conductive substrate by applying a current between a conductive substrate immersed in an aqueous solution containing at least nitrate ions, zinc ions, and a carbohydrate, and an electrode immersed in the solution.

Process for production of zinc oxide thin film, and process for

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Santa Clara, CA, United States of America

Kozo Arao