Tokyo Electron Limited

Kouzou Kanagawa

Kotaro Tsurusaki

Osamu Kuroda

Yoshihiro Kai

Keiji Onzuka

Hidemasa Aratake

Koji Yamashita

Koji Tanaka

Masami Akimoto

Issei Ueda

Junichi Kitano

Hideaki Sato

Norio Semba

Kazuya Koyama

Mitsuteru Yano

Kouji Ogura

Keita Hirase

Yusuke Yamamoto

Teruaki Konishi

Kazuhiko Ohi

A substrate processing system includes: a loading/unloading part into/from which a cassette that accommodates a plurality of substrates is loaded/unloaded; a batch-type processing part configured to collectively process a lot including the plurality of substrates; a single-substrate-type processing part configured to the plurality of substrates of the lot one by one; and an interface part configured to deliver the plurality of substrates between the batch-type processing part and the single-substrate-type processing part, wherein the loading/unloading part, the single-substrate-type processing part, the interface part, and the batch-type processing part are arranged in this order, and wherein the interface part comprises a lot formation part configured to form the lot, and a transfer part configured to transfer the plurality of substrates from the single-substrate-type processing part to the lot formation part, and configured to transfer the plurality of substrates from the batch-type processing part to the single-substrate-type processing part.

Substrate processing system and substrate processing method

A substrate processing apparatus includes a processing tub, a storage, a liquid recovery unit, a storage drain line and a liquid recovery unit drain line. The processing tub is allowed to accommodate therein multiple substrates, and configured to store therein a processing liquid. The storage is connected to the processing tub, and configured to store therein the processing liquid drained from the processing tub. The liquid recovery unit is configured to receive the processing liquid overflown from the processing tub. The storage drain line is configured to drain a liquid stored in the storage. The liquid recovery unit drain line is configured to drain a liquid received from the liquid recovery unit to an external drain line provided at an outside.

Substrate processing apparatus and apparatus cleaning method

A substrate processing apparatus includes a processing tank, a holder, an organic solvent supply, a drainage port, a gas supply, and an exhaust port. The processing tank stores an aqueous layer. The holder holds a substrate. The organic solvent supply supplies an organic solvent onto the aqueous layer to form a liquid layer of the organic solvent. The drainage port discharges the aqueous layer from a bottom wall of the processing tank and causes the liquid layer of the organic solvent to descend from above the substrate to below the substrate. The gas supply supplies a gas of a water repellent agent to the liquid layer from above the processing tank while the liquid layer descends. The exhaust port is exposed on a side wall of the processing tank by the descending of the liquid layer and discharges the gas of the water repellent gas.

Substrate processing apparatus for supplying gas of water repellent agent and substrate processing method

A substrate processing system includes: a batch-type processing part that collectively processes a lot including substrates arranged at a first pitch; a single-substrate-type processing part that processes the substrates of the lot one by one; and an interface part that delivers the substrates between the batch-type processing part and the single-substrate-type processing part. The batch-type processing part includes a processing bath that stores a processing solution having a lump shape or a mist shape, a first holder that holds the substrates arranged at the first pitch, and a second holder that receives the substrates arranged at a second pitch from the first holder in the processing solution. The interface part includes a transfer part that transfers the substrates held separately by the first and second holders in the processing solution, from the batch-type processing part to the single-substrate-type processing part.

A substrate processing apparatus includes a processing tub, a liquid recovery unit, a liquid recovery unit drain line, a storage, a first and a second liquid supply lines, a discharge line, a first and a second liquid flow rate controllers. The liquid recovery unit receives a processing liquid overflown from the processing tub. The liquid recovery unit drain line drains the processing liquid from the liquid recovery unit. The first and the second liquid supply lines supply a first and a second liquids, respectively. The cleaning liquid contains the first liquid and the second liquid, and removes a precipitate from the processing liquid. The discharge line discharges the cleaning liquid, the first liquid or the second liquid toward the liquid recovery unit. The first and the second liquid flow rate controllers are provided at the first and the second liquid supply lines, and adjust flow rates thereof, respectively.

There is provided a substrate processing apparatus including: a processing part configured to process a substrate with a processing liquid; and a processing liquid generation part configured to generate the processing liquid supplied to the processing part. The processing liquid generation part includes: a reservoir configured to store the processing liquid; a circulation line through which the processing liquid stored in the reservoir is circulated; a heater configured to heat the processing liquid; and a nozzle provided at a downstream side of the circulation line and has at least one ejection port formed to eject the processing liquid heated by the heater from above a liquid level of the processing liquid stored in the reservoir.

Substrate processing apparatus and processing liquid concentration method

A substrate processing apparatus includes a liquid processing tank, a movement mechanism, an ejector, and a controller. The liquid processing tank stores a processing liquid. The movement mechanism moves a plurality of substrates immersed in the liquid processing tank to a position above the liquid surface of the processing liquid. The ejector ejects a vapor of an organic solvent toward portions of the plurality of substrates that are exposed from the liquid surface. The controller changes an ejection flow rate of the vapor ejected by the ejector as the plurality of substrates are moved up.

Substrate processing apparatus, substrate processing method, and storage medium

A substrate processing apparatus includes a processing tank, a reservoir, a remover, a mixer, and a return path. Etching is performed on a substrate in the processing tank by immersing the substrate in a processing liquid containing a chemical liquid and silicon. The reservoir recovers and stores the processing liquid discharged from the processing tank. The remover recovers a portion of the processing liquid discharged from the processing tank, and removes silicon from the recovered processing liquid. The mixer mixes the processing liquid stored in the reservoir with the processing liquid from which silicon has been removed by the remover. The processing liquid mixed by the mixer is returned to the processing tank through a return path.

Substrate processing apparatus and processing liquid reuse method

A resist coating unit includes a coater cup surrounding a wafer W held by a spin chuck and an air supply mechanism for blowing an air into the coater cup. The air supply mechanism includes a hollow frame having a first open portion formed in the vertical wall, an air blowing device for blowing an air into the hollow frame, and a filter chamber unit into which the air within the frame is introduced. The filter chamber unit includes a first air introducing chamber having a heater arranged therein, a second air introducing chamber, an air stream control mechanism, and a filter unit. The air flowing within the frame flows into the first air introducing chamber through the first open portion so as to be uniformly heated by the heater and, then, is introduced into the second air introducing chamber. Then, the air uniformly heated by the heater is blown into the coater cup through the air stream control mechanism and the filter unit.

Substrate processing apparatus

Outside air taken in from the outside is cooled to a predetermined temperature by a cooler, and the air cooled by the cooler flows through a low temperature side flow path in a heat exchanger, whereas outside air flows through a high temperature side flow path in the heat exchanger, which allows heat to be exchanged between the cooled air and the outside air. The air, flowing through the low temperature side flow path in the heat exchanger and warmed up by the outside air flowing through the high temperature side flow path, is warmed and humidified by a warmer and a humidifier, and the air with predetermined temperature and humidity is supplied to a coating processing unit. Moreover, the outside air, flowing through the high temperature side flow path in the heat exchanger and cooled by the air flowing through the low temperature side flow path, is warmed by a warmer, and the air with a predetermined temperature is supplied to a developing processing unit. Thus, an apparatus for regulating the temperature and humidity of air to be supplied to the coating processing unit and the developing processing unit can be downsized, and running costs for electric power consumption and the like can be reduced.

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Kumamoto, Japan

Kouzou Kanagawa