Nec Compound Semiconductor Devices, Ltd.

Nec Electronics Corporation

Kouzi Hayasi

A semiconductor apparatus comprises a plurality of transistor devices including a control terminal being inputted with a control signal and a first and a second terminals that a current flows therein according to the control signal, and a plurality of substrate conductive portions each formed in a region different from a region where the plurality of transistor devices are formed therein, wherein the transistor devices are connected to the substrate conductive portions, and each of the substrate conductive portion includes a semiconductor layer separated from other substrate conductive portions.

Semiconductor apparatus and method of manufacturing the same

A semiconductor device includes a low resistance semiconductor substrate, a high resistance semiconductor layer formed on the substrate, an insulation layer formed on the semiconductor layer, and a transistor element composed of a collector region, abase region, and an emitter region formed in the semiconductor layer. The device further includes an emitter electrode formed in the insulation layer to be connected to the emitter region, a sub-emitter electrode formed in the insulation layer connected to the emitter electrode, a low resistance impurity-diffusion region formed in the semiconductor layer such that the sub-emitter electrode is connected to the substrate through the impurity-diffusion region, a base electrode formed in the insulation layer to be connected to the base region, and a base-bonding pad formed on the insulation layer to be connected to the base electrode. The base-bonding pad is placed on the insulation layer above the impurity-diffusion region to be at least partially encompassed with the impurity-diffusion region.

Semiconductor device including bipolar junction transistor, and production method therefor

A semiconductor device includes an insulating substrate having a first main face which is sealed with a sealing material and at least a set of input and output electrode patterns provided on the first main face. The input and output electrode patterns are separated from each other. The device also includes at least a ground electrode pattern having a ground potential. The ground electrode pattern is separated from the input and output electrode patterns. The device further includes at least an electrically conductive pattern extending over an inter-region between the input and output electrode patterns. The electrically conductive pattern is separated from the input and output electrode patterns, and the electrically conductive pattern is electrically connected to the ground electrode pattern, so that the electrically conductive pattern has a ground potential.

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Kanagawa, Japan

Kouzi Hayasi