Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Koutarou Tanaka

Masao Uchida

Masahiko Niwayama

Tsutomu Kiyosawa

Nobuyuki Horikawa

Takashi Hasegawa

Osamu Kusumoto

Takashi Hori

Yasuyuki Yanase

Masashi Hayashi

Kazuhiro Adachi

Kazuhiro Kagawa

A semiconductor device includes first and second second-conductivity-type region groups containing multiple second-conductivity-type regions that are disposed on a first silicon carbide semiconductor layer of a first conductivity type, arrayed in parallel following one direction with a space between each other, and first and second electrodes disposed on the first silicon carbide semiconductor layer and forming a Schottky junction with the first silicon carbide semiconductor layer. The first electrode covers a position where a distance from adjacent first and second second-conductivity-type regions included in a first second-conductivity-type region group, and a distance from a third second-conductivity-type region included in a second second-conductivity-type region group and adjacent to the first and second second-conductivity-type regions, are equal. A Schottky barrier between the first electrode and the first silicon carbide semiconductor layer is larger than a Schottky barrier between the second electrode and the first silicon carbide semiconductor layer.

Semiconductor device with first and second electrodes forming schottky junction with silicon carbide semiconductor layer and method of manufacturing the same

This silicon carbide semiconductor device includes: a silicon carbide semiconductor layer; a gate insulating layer which is arranged over the silicon carbide semiconductor layer and which includes a silicon oxide film; a gate electrode which is arranged on the gate insulating layer; and a carbon transition layer which is interposed between the silicon carbide semiconductor layer and the silicon oxide film and which has a carbon atom concentration is 10% to 90% of a carbon atom concentration of the silicon carbide semiconductor layer. In a region of the carbon transition layer which is located closer to the silicon oxide film than a position where a nitrogen atom concentration becomes the highest is, a ratio of an integral of nitrogen atom concentrations to an integral of carbon atom concentrations is equal to or greater than 0.11.

Silicon carbide semiconductor device and method for manufacturing same

This semiconductor device includes a silicon carbide layer of a first conductivity type having first and second principal surfaces and including an element region and a terminal region surrounding the element region on the first principal surface. The silicon carbide layer includes a first dopant layer of the first conductivity type contacting with the first principal surface and a second dopant layer of the first conductivity type located closer to the second principal surface than the first dopant layer is. The terminal region has, in its surface portion with a predetermined depth under the first principal surface, a terminal structure including respective portions of the first and second dopant layers and a ring region of a second conductivity type running through the first dopant layer to reach the second dopant layer. The dopant concentration of the first dopant layer is twice to five times as high as that of the second dopant layer. When viewed along a normal to the first principal surface, the first dopant layer is arranged to contact with the ring region both inside and outside of the region.

Semiconductor device and method for manufacturing same

In a semiconductor element, a body region of a second conductivity type includes a first body region in contact with a surface of a first silicon carbide semiconductor layer, and a second body region in contact with a bottom surface of the body region of the second conductivity type. The impurity concentration of the first body region is twice or more the impurity concentration of the second body region. A second silicon carbide semiconductor layer of a first conductivity type, which is a channel layer, has an impurity concentration distribution in a direction perpendicular to a semiconductor substrate, and an impurity concentration on a side in contact with the gate insulating film is lower than an impurity concentration on a side in contact with the first body region.

Semiconductor element

A semiconductor layerhaving a drift region, a body region, and a source regionprovided at a position next to the body region; an epitaxial layerin contact with the body region; and a gate insulating filmprovided on the epitaxial layer are formed on a principal surface of a semiconductor substrate. The epitaxial layer includes an interface epitaxial layerin contact with the body region, a first epitaxial layeron the interface epitaxial layer, and a second epitaxial layeron the first epitaxial layer. An impurity concentration of the interface epitaxial layer is higher than an impurity concentration of the first epitaxial layer, and lower than an impurity concentration of the second epitaxial layer.

Semiconductor device which can withstand high voltage or high current and method for fabricating the same

As viewed along a normal to the principal surface of a substrate, this semiconductor elementhas a unit cell regionand a terminal regionlocated between the unit cell region and an edge of the semiconductor element. The terminal regionincludes a ring regionof a second conductivity type which is arranged in a first silicon carbide semiconductor layerso as to contact with a drift region. The ring region includes a high concentration ring regionwhich contacts with the surface of the first silicon carbide semiconductor layer and a low concentration ring regionwhich contains an impurity of the second conductivity type at a lower concentration than in the high concentration ring region and of which the bottom contacts with the first silicon carbide semiconductor layer. A side surface of the high concentration ring regioncontacts with the drift region. As viewed along a normal to the principal surface of the semiconductor substrate, the high concentration ring region and the low concentration ring region are identical in contour.

Semiconductor element and manufacturing method therefor

The present invention is directed to an MIS type semiconductor device, including a channel layer between a semiconductor body region and a gate insulating film, the channel layer having an opposite semiconductor polarity to that of the semiconductor body region. Since Vfb of the semiconductor device is equivalent to or less than a gate rated voltage Vgccof the semiconductor device with respect to an OFF-polarity, density of carrier charge that is induced near the surface of the semiconductor body region is kept at a predetermined amount or less with a guaranteed range of operation of the semiconductor device.

Semiconductor device and method for driving same

A method of producing a semiconductor device according to the present invention includes: a step of implanting an impurity into a semiconductor layerby using a first implantation mask layer, thereby forming a body region; a step of implanting an impurity by using the first implantation mask layerand a second implantation mask layer, thereby forming a contact regionwithin the body region; a step of forming a third implantation mask layer, and thereafter selectively removing the second implantation mask layer; a step of forming a side wallon a side face of the first implantation mask layer; and a step of implanting an impurity to form a source regionwithin the body region

Growing community of inventors

Osaka, Japan

Koutarou Tanaka