Kabushiki Kaisha Toshiba

Koutarou Sho

Shinichi Ito

Katsuya Okumura

Tsuyoshi Shibata

Yuji Kobayashi

Eishi Shiobara

Kei Hayasaki

Tsukasa Azuma

Takehiro Kondoh

Katsutoshi Kobayashi

Daizo Muto

A method for manufacturing a semiconductor device, includes: supplying a liquid resist containing a water-repellent additive to a surface of a rotating semiconductor wafer fixed to a rotary support to form a resist film to a design thickness on the surface of the semiconductor wafer; spin drying the resist film; bringing a liquid into contact with the resist film and exposing the resist film through the liquid after the spin drying; developing the resist film to form a resist pattern; and performing processing on the semiconductor wafer. A condition for adjusting contact angle between the resist film surface and the liquid is controlled so that the contact angle assumes a desired value, the condition including at least one selected from the group consisting of spin drying time for the resist film, resist temperature during the supplying, pressure of an atmosphere above the semiconductor wafer surface, and humidity of the atmosphere above the semiconductor wafer surface.

Method for manufacturing semiconductor device

According to an aspect of the invention, there is provided a single substrate processing method which continuously heats substrates to be processed to which films containing solvents are applied, by use of a heating apparatus having an opening/closing mechanism, including supplying a gas containing a solvent contained in a film of a first substrate to be processed into the heating apparatus in a closed state of the opening/closing mechanism between processing of the first substrate to be processed and processing of a second substrate to be processed.

Substrate processing method and manufacturing method of semiconductor device

A pattern forming method includes the following steps. A resist pattern is formed on a to-be-processed film. A mask pattern including the resist pattern and a resin film formed on a surface of the resist pattern is formed. Slimming of the mask pattern is executed.

Pattern forming method and semiconductor device manufacturing method

A film forming method includes the steps of forming a solution film, by dropwise supplying a solution containing solid contents in a solvent and volatilizing the solvent, and selectively forming a film of the solid contents on a to-be-processed substrate at predetermined areas, the method comprising the steps of selectively irradiating an energy beam onto that substrate surface to allow the substrate surface to be modified and forming a filmed area having a high affinity for the solvent and a non-filmed area having a low affinity for the solvent, dropwise supplying the solution to the substrate surface and forming the solution film, and volatilizing the solvent from the solution film and, by doing so, forming a solid contents film selectively on the substrate surface selectively at filmed areas.

Film forming method

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Yokohama, Japan

Koutarou Sho