Sanyo Electric Co., Ltd.

Sanyo Electric Oc., Ltd.

Koutarou Furusawa

Mitsuaki Matsumoto

Takenori Goto

Nobuhiko Hayashi

Masayuki Shono

Daisuke Ide

Kazushi Mori

Akira Ibaraki

Koji Tominaga

Keiichi Yodoshi

Teruaki Miyake

Kenichi Matsukawa

Yasuyuki Bessho

Atsushi Tajiri

Shoji Honda

Toru Ishikawa

Takatoshi Ikegami

Atushi Tajiri

Yasuhiko Nomura

Hitoshi Hirano

Tatsuya Kunisato

Kunio Takeuchi

Shigeyuki Okamoto

Shingo Kameyama

Saburo Nakashima

Ryouji Hiroyama

A semiconductor light emitting element includes a semiconductor layer which has an electrode on at least one principal surface and a supporting substrate which is bonded with the electrode by a conductive adhesive. One of the semiconductor layer and the supporting substrate includes a protruded surface protruding in one portion on the principal surface, the other includes a junction surface which opposes the protruded surface, the junction surface is bonded with the protruded surface with the electrode and the conductive adhesive interposed between the protruded surface and the junction surface, and the junction surface is larger in area than a region to be bonded with the protruded surface.

Semiconductor light emitting element and semiconductor light emitting device

A method of manufacturing an element having a microstructure of an excellent grating groove pattern or the like is obtained. This method of manufacturing an element having a microstructure comprises steps of forming a metal layer on a substrate, forming a dot column of concave portions on the surface of the metal layer and anodically oxidizing the surface of the metal layer formed with the dot column of concave portions while opposing this surface to a cathode surface thereby forming a metal oxide film having a grating groove pattern. When the interval between the concave portions of the dot column is reduced, therefore, a linear grating groove pattern having a large depth with a uniform groove width along the depth direction is easily formed in a self-organized manner.

Element having microstructure and manufacturing method thereof

Method of forming grating microstrutures by anodic oxidation

The present invention provides a wave plate capable of obtaining preferable phase conversion characteristic over a wide wavelength range. The wave plate includes an aluminum oxide film having linear grating groove patterns. The period L (&#x3bc;m) and the duty ratio De of the grating groove patterns are set at values within the first range specified by the following four formulas:L&#x2266;0.65&#x2267;2&#xd7;10&#x2266;6.0317&#x2212;10.3525.0516(&#x2212;0.85)/0.44+(&#x2212;0.41)/0.39&#x2266;1

Wave plate and optical device using the same

Method of forming grating microstructures by anodic oxidation

A semiconductor laser device is characterized in that an angle &#x3b8; of inclination formed by the side surfaces of a ridge portion and a lower part of the ridge portion is at least 70&#xb0; and not more than 117&#xb0;, a p-type cladding layer is made of AlGaAs, a first current blocking layer is made of AlGaAs, the distance between an emission layer and the first current blocking layer satisfies the relation of t&#x2266;0.275/(1&#x2212;(X2&#x2212;X1)) assuming that t represents the distance, and a lower width W of the ridge portion is at least 2 &#x3bc;m and not more than 5 &#x3bc;m.

Semiconductor laser device and method of manufacturing the same

A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semiconductor substrate of first conductive type. The first and second cladding layers have a refractive index smaller than and a band gap larger than the active layer. A saturable optical absorbing layer having a band gap of energy substantially equal to the energy corresponding to lasing wavelength is formed in both the first and second cladding layers. Further, a barrier layer having a refractive index smaller than and a band gap larger than the first and second cladding layers is formed between the first cladding layer and the active layer and/or between the active layer and the second cladding layer.

Semiconductor laser with a self sustained pulsation

In a semiconductor laser device comprising an n-type cladding layer, an active layer formed on the cladding layer, a p-type cladding layer formed on the active layer, and a p-type saturable light absorbing layer provided in the p-type cladding layer, the current confinement width for confining current injected into the active layer being W, the thickness d.sub.a of the active layer, the optical confinement factor .GAMMA..sub.a of the active layer, the thickness d.sub.s of the saturable light absorbing layer, the optical confinement factor .GAMMA..sub.s of the saturable light absorbing layer, and the light spot size S on a facet of the semiconductor laser device are so set as to satisfy a predetermined relationship. The reflectivity on a light output facet is set in the range of 10 to 20%.

Semiconductor laser device and method of designing the same

Method of making a semiconductor laser with a self-sustained pulsation

Semiconductor laser with a self-sustained pulsation

Growing community of inventors

Higashiosaka, Japan

Koutarou Furusawa