Fuji Electric Co., Ltd.

Kouta Yokoyama

Yuichi Harada

Misaki Takahashi

Tohru Shirakawa

Kaname Mitsuzuka

Toru Ajiki

Provided is a semiconductor device that includes a first conductivity type well region below a gate runner portion, wherein a diode region includes first contact portions, a first conductivity type anode region, and a second conductivity type cathode region; wherein the well region contacts the diode region in the first direction, and when an end of the well region, an end of at least one of first contact portions, and an end of the cathode region that face one another in the first direction are imaginary projected on an upper surface of the semiconductor substrate, a first distance is longer than a second distance, the first distance being a distance between the end of the well region and the end of the cathode region, and the second distance being a distance between the end of the well region and the end of the at least one first contact portion.

Semiconductor device

Provided is a semiconductor device that includes a semiconductor substrate that is provided with a first conductivity type drift region, a transistor portion that includes a second conductivity type collector region in contact with a lower surface of the semiconductor substrate, and a diode portion that includes a first conductivity type cathode region in contact with the lower surface of the semiconductor substrate, and is alternately disposed with the transistor portion along an arrangement direction in an upper surface of the semiconductor substrate. In the transistor portions, a width in the arrangement direction of two or more transistor portions sequentially selected from the transistor portions nearer to the center in the arrangement direction of the semiconductor substrate is larger than a width in the arrangement direction of one of the other transistor portions.

Provided is a semiconductor device that includes: a first conductivity type anode region provided in the semiconductor substrate in the diode region; a second conductivity type drift region that is located below the anode region in the semiconductor substrate; a second conductivity type accumulation region that is located between the anode region and the drift region in a depth direction of the semiconductor substrate; and an insulating film that includes a plurality of contact portions extending in a first direction and is provided on an upper surface of the semiconductor substrate; wherein the plurality of contact portions include a first contact portion provided in the diode region; and the first contact portion includes a first non-overlapping region in which an end of the first contact portion and the accumulation region in the first direction do not overlap in the depth direction.

Growing community of inventors

Matsumoto, Japan

Kouta Yokoyama