Tokyo Electron Limited

Osaka University

Kousuke Yoshihara

Taro Yamamoto

Hirofumi Takeguchi

Yuichi Yoshida

Yuichi Terashita

Hideharu Kyouda

Tomohiro Iseki

Koji Takayanagi

Toshinobu Furusho

Atsushi Ookouchi

Takashi Sasa

Yasushi Takiguchi

Katsunori Ichino

Junji Nakamura

Satoru Shimura

Suguru Enokida

Akihiro Fujimoto

Keiichi Tanaka

Shinichi Hatakeyama

Koshi Muta

Fumiko Iwao

Hiroshi Ichinomiya

Hiroshi Arima

Katsuhiro Tsuchiya

Akira Miyata

Shinichi Hayashi

Nobuaki Matsuoka

Hiroichi Inada

Kazuhiro Takeshita

Seiji Nagahara

Yuichi Douki

Masahiro Fukuda

Shinichiro Kawakami

Minoru Kubota

Eiichi Sekimoto

Gousuke Shiraishi

Hideo Shite

Kohei Kawakami

Daisuke Ishimaru

Masaru Tomono

Takafumi Niwa

Kenichi Shigetomi

Naoki Shibata

Kentaro Yamamura

Momoko Shizukuishi

Takahiro Ookubo

Yuuichi Yamamoto

Takeshi Saikusa

Hiroyuki Ide

Yusuke Yamamoto

Takayuki Fukudome

Steffen Hornig

Hirosi Nisihata

Kazuto Umeki

Takahiro Kitano

Naruaki Iida

Yuji Matsuyama

Junichi Kitano

Joshua Hooge

Masami Yamashita

Wallace Paul Printz

Takashi Takekuma

Masatoshi Deguchi

Kouzou Tachibana

Hidefumi Matsui

Takayuki Katano

Akihiro Oshima

Kouichirou Tanaka

Seiichi Tagawa

Akiko Kai

Derek Bassett

Ryouichirou Naitou

Takeshi Shimoaoki

Satoshi Shimmura

Hiroyuki Iwaki

Soichiro Okada

Kentaro Yoshihara

Kazuhiko Ooshima

Yo Suzuki

Toru Aoyama

Hiroyuki Miyamoto

Takafumi Hasimoto

Yuji Sakai

Hiroyuki Hara

Yukie Minekawa

Takeshi Ohto

Hironori Mizoguchi

Shinya Hori

Masahiro Enomoto

A developing treatment method performs a developing treatment on a resist film on a substrate. The method includes: a pattern forming step of forming a resist pattern by supplying a developing solution to the substrate and developing the resist film on the substrate; a coating step of coating the developed substrate with an aqueous solution of a water-soluble polymer; and a rinse step of cleaning the substrate by supplying a rinse solution to the substrate coated with the aqueous solution of the water-soluble polymer.

Developing treatment method, computer storage medium and developing treatment apparatus

A substrate processing apparatus includes plural heating modules each including a table on which a substrate is placed to be heated, the substrate having plural heated zones. The table has plural heaters each assigned to heat respective ones of the heated zones. Heat generation of the heaters is controlled independently. A control unit controls the heaters such that integrated quantities of heat of the respective heated zones given by the corresponding heaters from first to second time point are substantially identical to each other in each of the heating modules, and are substantially identical to each other among the heating modules. The first time point is set when a temperature transition profile of the substrate is rising toward a process temperature after placing the substrate on the table under a condition where heat generation of the heaters is stable. The second time point is set after the temperature transition profile reaches the process temperature.

Substrate processing apparatus and method of adjusting substrate processing apparatus

A liquid processing device includes: a nozzle configured to discharge, onto a substrate, a processing liquid supplied from a processing liquid source, the processing liquid being configured to process the substrate; a main flow path which connects the processing liquid source and the nozzle; a filter provided in the main flow path; a branch path branched from the main flow path; a pump provided at an end of the branch path; and a controller configured to output a control signal to perform a first process of sucking the processing liquid supplied from the processing liquid source by the pump to flow the processing liquid into the branch path and then a second process of discharging the processing liquid of a smaller amount than a capacity of the branch path from the pump to the branch path to discharge the processing liquid from the nozzle.

Liquid processing device and liquid processing method

Disclosed is a processing liquid supplying apparatus. The apparatus includes: a processing liquid supply source configured to supply a processing liquid for processing a substrate to be processed; an ejection unit configured to eject the processing liquid to the substrate to be processed; a filter device configured to remove foreign matters in the processing liquid; a supply pump and an ejection pump which are provided in the supply path at a primary side and a secondary side of the filter device, respectively; and a control unit configured to output a control signal to decompress and degas the processing liquid supplied from the processing liquid supply source by using one of the supply pump and the ejection pump, and subsequently, pass the degassed processing liquid through the filter device beginning from the primary side to the secondary side of the filter device by using the supply pump and the ejection pump.

Processing liquid supplying apparatus and processing liquid supplying method

A solution treatment apparatus includes: a substrate holding unit holds and rotates a substrate; a coating solution supply unit applies a coating solution to the substrate held by the substrate holding unit; a cup unit arranged outside the substrate holding unit in a manner to be able to surround the substrate held by the substrate holding unit; an exhaust path provided between the substrate holding unit and an inner peripheral surface of the cup unit; a coating solution collection unit provided above the exhaust path in a manner to cover the exhaust path and including an opening part communicating in a vertical direction; a solvent supply unit supplies a solvent for the coating solution to the coating solution collection unit; and a relay unit located above the coating solution collection unit and projecting from the inner peripheral surface of the cup unit toward the coating solution collection unit.

Solution treatment apparatus and cleaning method for solution treatment apparatus

A film forming method for forming a coating film by applying a coating solution onto a substrate having projections and recesses formed on a surface thereof by a predetermined pattern, includes: applying the coating solution onto the surface of the substrate to form a thick film having a depth of projections and recesses on a surface of the film of a predetermined value or less and having a film thickness larger than a target film thickness of the coating film; and removing the surface of the thick film to form the coating film having the target film thickness.

Film forming method, storage medium, and film forming system

A filtration efficiency, which is similar to the filtration efficiency obtained when a plurality of filters are provided, can be obtained by one filter, and decrease in throughput can be prevented. Based on a control signal from a control unit, a resist liquid L is sucked into a pumpthrough a filter. A part of the resist liquid sucked in the pump is discharged from a discharge nozzle. The remaining resist liquid is returned to a supply conduiton a primary side of the filter. A process is synthesized by adding a replenishment amount equal to the discharge amount to the return amount. The discharge of the synthesized process liquid and the filtration thereof by the filter are performed the number of times corresponding to a rate between the discharge amount and the return amount.

Liquid processing apparatus, liquid processing method, and storage medium for liquid process

A method of forming a coating film includes horizontally supporting a substrate, supplying a coating solution to a central portion of the substrate and spreading the coating solution by a centrifugal force by rotating the substrate at a first rotational speed, decreasing a speed of the substrate from the first rotational speed toward a second rotational speed and rotating the substrate at the second rotational speed to make a surface of a liquid film of the coating solution even, supplying a gas to a surface of the substrate when the substrate is rotated at the second rotational speed to reduce fluidity of the coating solution, and drying the surface of the substrate by rotating the substrate at a third rotational speed faster than the second rotational speed.

Coating film forming method, coating film forming apparatus, and storage medium

A developing apparatus includes: a substrate holder that hold a substrate horizontally; a developer nozzle that supplies a developer onto the substrate to form a liquid puddle; a turning flow generation mechanism including a rotary member that rotates about an axis perpendicular to the substrate while the rotary member is being in contact with the liquid puddle thereby to generate a turning flow in the liquid puddle of the developer formed on the substrate; and a moving mechanism for moving the turning flow generation mechanism along a surface of the substrate. The line-width uniformity of a pattern can be improved by forming turning flows in a desired region of the substrate and stirring the developer.

Developing apparatus, developing method and storage medium

A processing liquid supplying apparatus performs an ejecting step in which a processing liquid suctioned into a pump passes through a filter device and is ejected from an ejecting part without returning the processing liquid back to the pump; a returning step in which the processing liquid suctioned into the pump is returned to a processing liquid source side of a mixing section; and a replenishing step in which the processing liquid returned to the processing liquid source side is suctioned into the pump together with the processing liquid replenished from the processing liquid source. The processing liquid passes through the filter device in at least one of the returning step and the replenishing step. The amount of the processing liquid returned to the processing liquid source side in the returning step is larger than the amount of the processing liquid ejected from the ejecting part in the ejecting step.

Processing liquid supplying apparatus and method of supplying processing liquid

Techniques disclosed herein provide an apparatus and method of spin coating that inhibits the formation of wind marks and other defects from turbulent fluid-flow, thereby enabling higher rotational velocities and decreased drying times, while maintaining film uniformity. Techniques disclosed herein include a fluid-flow member, such as a ring or cover, positioned or suspended above the surface of a wafer or other substrate. The fluid-flow member has a radial curvature that prevents wind marks during rotation of a wafer during a coating and spin drying process.

Cover plate for wind mark control in spin coating process

A developing apparatus including a horizontal substrate holder, a rotating mechanism to rotate the substrate holder, a developer nozzle to supply a developer onto a part of the substrate to form a liquid puddle, a moving mechanism to move the developer nozzle in a radial direction of the rotating substrate, a contact part that moves with the developer nozzle and has a surface opposed to the substrate, which is smaller than the surface of the substrate, and a control unit to output a control signal such that a supply position of the developer on the substrate is moved in the radial direction of the substrate so that the liquid puddle is spread out on a whole surface of the substrate while the contact part is in contact with the liquid puddle.

Developing method, developing apparatus and storage medium

A technique which, in forming a resist pattern on a wafer, can achieve high resolution and high in-plane uniformity of pattern line width. After forming a resist film on a wafer W and subsequently performing pattern exposure by means of a pattern exposure apparatus, the entire pattern exposure area is exposed by using a flood exposure apparatus. During the flood exposure, the exposure amount is adjusted depending on the exposure position on the wafer based on information on the in-plane distribution of the line width of a resist pattern, previously obtained from an inspection apparatus. Methods for adjusting the exposure amount include a method which adjusts the exposure amount while moving a strip-shaped irradiation area corresponding to the diameter of the wafer, a method which involves intermittently moving an irradiation area, corresponding to a shot area in the preceding pattern exposure, to adjust the exposure amount for each chip.

Exposure apparatus, resist pattern forming method, and storage medium

Growing community of inventors

Koshi, Japan

Kousuke Yoshihara