Showa Denko K.k.

National Institute for Materials Science

Showa Denko Kabushiki Kaisha

Kousuke Shioi

Naoto Hirosaki

Hisayuki Miki

Eiji Ihara

Tomoyuki Masuda

Hidefumi Nakano

Yuichi Michiue

The present invention is a phosphor expressed by the general formula (ARMX)(MX)(wherein the element A is one or more types of element selected from Li, Na, Be, Mg, Ca, Sr, Ba, Sc, Y, La, Gd, and Lu, the element R is one or more types of activating agent selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb, the element M is one or more types of element selected from Si, Ge, Sn, Ti, Hf, Zr, Be, B, Al, Ga, In, Tl, and Zn, the element X is one or more types of element selected from oxygen and nitrogen, n and m are integers of 1 or more, and x is a real number defined by 0&#x3c;x&#x3c;1), as well as a manufacturing method for the same, and a light-emitting device that uses this phosphor.

Phosphor, method of manufacturing the same, and light-emitting device

A method for providing a phosphor, including a kneading step in which a raw material is kneaded to provide a raw material mixture; a sintering step in which the raw material mixture is sintered; and a heat treatment step in which the sintered raw material mixture is heat-treated, wherein the raw material includes at least one or more M-containing materials selected from MSi, MSiN, MSiN, MAlNand MSiN, wherein M is one or more divalent elements selected from M(0) and M(1).

Phosphor, method for producing the same and light-emitting device using the same

An illumination device for a display device, which is formed from a substrate and a plurality of white light-emitting devices disposed on top of the substrate, and can be used as a backlight for a liquid crystal display panel, wherein the white light-emitting devices have a light source and a phosphor that is excited by the light source and emits light, and a fluorescent material with a composition represented by a general formula: M(0)M(1)M(2)M(3)ONis used as the phosphor.

Illumination device for display device, and display device

The present invention provides a fluorescent substance exhibiting higher brightness as compared to conventional fluorescent substances, a method for producing the same, and a light-emitting device using such a fluorescent substance. Specifically, the fluorescent substance comprises an &#x3b1;-sialon crystal structure having the same crystal structure with an &#x3b1;-type silicon nitride crystal, which includes at least an M(0) element (where M(0) represents one or two elements selected from Sr and La), an M(1) element (where M(1) represents one or more elements selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm and Yb), Si, Al, and nitrogen.

Fluorescent substance, method for producing the same, and light-emitting device using the same

The invention is a phosphor which includes a phosphor material having a composition represented by a general formula: M(0)M(1)M(2)M(3)ON, wherein M(0) is one or more elements selected from Li, Na, Be, Mg, Ca, Sr, Ba, Sc, Y, La, Gd and Lu; M(1) is one or more activators selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm and Yb; M(2) is one or more elements selected from Si, Ge, Sn, Ti, Hf and Zr; M(3) is one or more elements selected from Be, B, Al, Ga, In, Tl and Zn; O is oxygen; N is nitrogen; and an atomic ratio of M(0), M(1), M(2), M(3), O and N is adjusted to satisfy the following: x, y and z satisfy 33&#x2266;x&#x2266;51, 8&#x2266;y&#x2266;12 and 36&#x2266;z&#x2266;56; a and b satisfy 3&#x2266;a+b&#x2266;7 and 0.001&#x2266;b&#x2266;1.2; m and n satisfy 0.8&#xb7;me&#x2266;m&#x2266;1.2&#xb7;me and 0&#x2266;n&#x2266;7 in which me=a+b; and v satisfies v={a&#xb7;v(0)+b&#xb7;v(1)}/(a+b) (wherein v(0) is a valence of M(0) ion and v(1) is a valence of M(1) ion). The invention also relates to a method for producing the phosphor and a light-emitting device using the phosphor.

A phosphor represented by M1M2M3(O,N), wherein M1 denotes one or more metal elements selected from Li, Mg, Ca, Sr, Ba, Y, La, Gd and Lu, M2 denotes one or more metal elements selected from Ce, Pr, Eu, Tb, Yb and Er, M3 denotes one or more metal elements selected from Si, Ge, Sn, B, Al, Ga and In, and x1 and x2 satisfy 0&#x3c;x1, x2&#x3c;2 and 0&#x3c;x1+x2&#x3c;2. The phosphor may be an &#x3b1;-sialon-based phosphor containing at least one of Sr and Ba in an amount of 5 mass % or less. The respective phosphors are manufactured by a method that includes firing a raw material mixture of the phosphor in a nonoxidizing atmosphere at 1600 to 2200&#xb0; C. A light-emitting apparatus is made possible by combining the respective phosphors with a light-emitting device.

Phosphor, method for production thereof, and light-emitting apparatus

A fluorescent material is combined with a blue light-emitting diode or an ultraviolet light-emitting diode and consequently enabled to emit a white light. An oxynitride-based fluorescent material is formed by substituting Eu for part of M in a composition of MOSiNO, wherein M denotes one or more metals selected from among Be, Mg, Ca, Sr and Ba.

Oxynitride-based fluorescent material and method for production thereof

An oxynitride-based fluorescent material is formed of what results from substituting Eu for part of M of a general formula 2MO.SiN, wherein M denotes one or more elements selected from among Be, Mg, Ca, Sr and Ba. The oxynitride-based fluorescent material can be produced by a method comprising mixing an oxide of Be, Mg, Ca, Sr, Ba or Eu, or a compound of Be, Mg, Ca, Sr, Ba or Eu enabled by heating to form an oxide, and silicon nitride or a compound enabled by heating to form silicon nitride to obtain a mixture and firing the mixture in a vacuum or a non-oxidizing atmosphere at 1200 to 1900&#xb0; C.

An oxynitride-based fluorescent material is formed of what results from substituting Eu for part of M of a general formula MSiNO, wherein M denotes one or more elements selected from among Be, Mg, Ca, Sr and Ba. The oxynitride-based fluorescent material can be produced by a method comprising mixing an oxide of Be, Mg, Ca, Sr, Ba or Eu, or a compound of Be, Mg, Ca, Sr, Ba or Eu enabled by heating to form an oxide, silicon nitride or a compound enabled by heating to form silicon nitride, and silicon oxide or a compound enabled by heating to form silicon oxide to obtain a mixture and firing the mixture in a vacuum or a non-oxidizing atmosphere at 1200 to 1900&#xb0; C.

hBN is converted to cBN by keeping it under temperature and pressure conditions within the range of stability of cubic boron nitride, in the presence of at least one compound selected from amides, imides and carbides of alkali metals and alkaline earth metals, as well as a silicon source and/or a boron source.

Method of producing cubic boron nitride

Cubic boron nitride composite particles containing hard microparticles dispersed in cubic boron nitride particles. The hard microparticles have an average particle size of about 10 nm to about 10 &mgr;m and a particle size equal to or smaller than one-third of the particle size of any of the cubic boron nitride particles, and the amount of the hard microparticles dispersed in the cubic boron nitride particles is from about 1% to about 50% by volume.

Cubic boron nitride composite particle

hBN is converted to cBN by keeping it under temperature and pressure conditions within the range of stability of cubic boron nitride, in the presence of at least one compound selected from carbides of alkali metals and alkaline earth metals, or in the presence both of at least one compound selected from carbides of alkali metals and alkaline earth metals and of at least one compound selected from amides and imides of alkali metals and alkaline earth metals.

Method for producing cubic boron nitride

hBN is converted to cBN by keeping it under temperature and pressure conditions within the range of stability of cubic boron nitride, in the presence of a mixture of at least two compounds selected from amides and imides of Li, Ca and Mg, or in its copresence with at least one metal selected from elements of Groups Ia, IIa, IIIa, VIa, VIIa, VIII, IIb and IIIb.

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Chiba, Japan

Kousuke Shioi