Hamamatsu-photonics K.k.

Kyoto University

Kousuke Shibata

Susumu Noda

Yoshitaka Kurosaka

Kazuyoshi Hirose

Takahiro Sugiyama

Atsushi Sugiyama

Akiyoshi Watanabe

Kazuue Fujita

Naota Akikusa

Masahiro Hitaka

Takahide Ochiai

Shinichi Furuta

A quantum cascade laser device includes a QCL element; a lens; and a lens holder having a small-diameter hole, a large-diameter hole, and a counterbore surface. At least a part of a side surface of the lens is fixed to an inner surface of the large-diameter hole in a state where an edge portion of an incident surface of the lens is in contact with the counterbore surface. A central axis of the small-diameter hole is eccentric from that of the large-diameter hole. The side surface of the lens is positioned with respect to the inner surface of the large-diameter hole along a direction from the central axis of the large-diameter hole toward the central axis of the small-diameter hole. A central axis of the lens is disposed at a position closer to the central axis of the small-diameter hole than to the central axis of the large-diameter hole.

Quantum cascade laser device

A semiconductor laser element includes: a semiconductor substrate; a semiconductor laminate; a first electrode in which a ridge portion of the semiconductor laminate is embedded; and a second electrode. A first region of a side surface of the first electrode is separated from a first end surface in such a manner to extend away from the first end surface as the first region extends away from the ridge portion to both sides. A shortest distance between a first side surface and the first region is smaller than each of a shortest distance between a third side surface and a third region and a shortest distance between a fourth side surface and a fourth region. The first region does not include a corner in a range satisfying D≤Sand D≤S.

Semiconductor laser element, semiconductor laser device, and method for manufacturing semiconductor laser element

A quantum cascade laser device includes a semiconductor substrate, an active layer provided on the semiconductor substrate, and an upper clad layer provided on a side of the active layer opposite to the semiconductor substrate side and having a doping concentration of impurities of less than 1×10cm. Unit laminates included in the active layer each include a first emission upper level, a second emission upper level, and at least one emission lower level in their subband level structure. The active layer is configured to generate light having a center wavelength of 10 μm or more due to electron transition between at least two levels of the first emission upper level, the second emission upper level, and the at least one emission lower level in the light emission layer in each of the unit laminates.

The present edge-emitting semiconductor layer element includes two-dimensional photonic crystalsformed in a semiconductor layer, and when one direction of a contact region of an electrodeis provided as a length direction (X-direction) and a direction perpendicular to both of the length direction and a thickness direction of a substrate is provided as a width direction (Y-direction), the two-dimensional photonic crystalsare, when viewed from a direction (Z-axis) perpendicular to the substrate, located in a region containing the electrode contact region and wider in the width direction than the contact region, and have a refractive index periodic structure in which the refractive index satisfies a Bragg's diffraction condition while periodically changing at every interval along the one direction (X-axis).

Edge-emitting semiconductor laser element

A semiconductor surface light-emitting element of this invention is provided with a photonic crystal layerobtained by periodically forming a plurality of holes H in a basic layerA comprised of a first compound semiconductor of the zinc blend structure and growing embedded regionsB comprised of a second compound semiconductor of the zinc blend structure, in the holes H, and an active layerto supply light to the photonic crystal layer, in which a principal surface of the basic layerA is a (001) plane and in which side faces of each hole H have at least three different {100} facets.

Growing community of inventors

Hamamatsu, Japan

Kousuke Shibata