Denso Corporation

Oki Electric Industry Co., Ltd.

Oki Semiconductor Co., Ltd.

Matsushita Electric Industrial Co., Ltd.

Hitachi Chemical Company, Ltd.

Denso It Laboratory, Inc.

Kousuke Hara

Hirotoshi Iwasaki

Motoki Kobayashi

Tetsuya Hara

Hiroshi Yamamoto

Akira Takahashi

Takamitsu Suzuki

Norio Yamamoto

Nobuhiro Mizuno

Toshiyuki Ito

Hirotane Ikeda

Takuya Mori

Jun Kanamori

Takeshi Yamashita

Hiroshi Takeda

Yasufumi Kojima

Toyokazu Sakata

Shigeyuki Inoue

Satoko Ueda

Masaki Yoshimaru

Reiko Ueno

Shinji Tanaka

Masanori Oumi

Takashi Omori

Kouji Kogure

Toshihiko Kamatani

Noriko Kaneda

An electrode includes an electrode layer including an electrode active material or a raw material of an electrode active material and a bisphenol-based resin, and a current collector supporting the electrode layer. The bisphenol-based resin is obtained by a reaction of (a) a bisphenol-based compound, (b) at least one selected from the group consisting of aminobenzenesulfonic acids and aminobenzenesulfonic acid derivatives, and (c) at least one selected from the group consisting of formaldehyde and formaldehyde derivatives, wherein a content of a structural unit that is obtained by the reaction of the component (a), the component (b) and the component (c) and also has a benzoxazine ring is 15 mass % or less. A production method for the electrode is also disclosed.

Bisphenol-based resin, electrode, lead storage battery, production methods for these, and resin composition

An obtaining unit obtains information about a condition where a vehicle is placed. A detection unit detects at least one of a voice and an action of an occupant of the vehicle. An estimation unit estimates an in-vehicle apparatus to be a controlled target according to the condition where the vehicle is placed. A determination unit determines an in-vehicle apparatus to be a controlled in-vehicle apparatus and determines a control content thereof in consideration of the at least one of a voice and an action. A notification unit notifies the occupant of the in-vehicle apparatus to be controlled and the control content thereof determined by the determination unit. A control unit controls the in-vehicle apparatus according to the determination of the determination unit when receiving a response to the notification of the notification unit from the occupant to permit the control of the in-vehicle apparatus.

Control system for vehicle and method for controlling in-vehicle apparatus

A semiconductor device according to the present invention includes a semiconductor substrate: a photodiode responsive to a light, which is formed in the semiconductor substrate; at least an interlayer insulating layer formed over the semiconductor substrate, the at least an interlayer insulating layer comprising an upper most insulating layer; at least a conductive wiring layer, comprising an upper most conductive wiring layer formed on the upper most insulating layer; and a first passivation layer formed over the upper-most conductive wiring layer. The upper-most wiring layer is not formed directly above the photodiode. The first passivation layer is made of a permeability-resist material and is not formed directly above the photodiode.

Semiconductor device

An automotive air conditioner includes a storage unit which stores a plurality of pieces of state information as respective learned data; a learning unit which constructs a probabilistic model; a control information correcting unit which corrects setting information, etc., related to a vehicle occupant's setting operation in accordance with a calculated probability so as to achieve a specific setting operation; and an air-conditioning control unit which controls an air-conditioning unit in accordance with the corrected setting information, etc. The learning unit includes a clustering subunit for classifying the plurality of learned data into at least first and second clusters and for determining first and second ranges for the value of the state information from the learned data included in the respective clusters, and a probabilistic model constructing subunit for constructing the probabilistic model by determining the probabilities for the state information contained in the first and second ranges, respectively.

Automotive air conditioner and method and apparatus for controlling automotive air conditioner

When a vehicle deviates from a guide route at a first branch point, the state of the first branch point is memorized. Afterward, when a second branch point becomes a target for a route guide and the state of the second branch point is similar to the memorized state, a user of the vehicle is provided with a guide for preventing deviation from the guide route at the second branch point with a manner of the guide changed. This procedure allows learning of tendency of the user with respect to a state apt to cause the user to mistake a guide route. A guide to help prevent a user from deviating from a guide route at a branch point can be thus performed appropriately.

Navigation system

A notification controller allows a notification apparatus to perform notification in accordance with input of notification request information from a notification information transmitter. The notification controller determines whether or not the notification request information supplied from the notification information transmitter can be disabled from provision in accordance with a user operation. When the information supplied is determined to be disabled from provision in accordance with a user operation, the notification controller prompts a user to determine whether or not to stop the notification. The notification controller disables the notification when confirming that the user issues an instruction to stop the notification.

Notification controller, notification control method and notification information transmitter

A method for fabricating a semiconductor element on a semiconductor substrate having a support substrate and a semiconductor layer above the support substrate. The method includes preparing the semiconductor substrate having a transistor formation region and an element isolation region both defined thereon; forming a pad oxide film on the semiconductor layer of the semiconductor substrate; forming an oxidation-resistant mask layer on the pad oxide film; forming a resist mask to cover the transistor formation region on the oxidation-resistant mask layer; performing a first etching process for etching the oxidation-resistant mask layer using the resist mask as a mask to expose the pad oxide film of the element isolation region; and removing the resist mask and oxidizing the semiconductor layer below the exposed pad oxide film by LOCOS using the exposed oxidation-resistant mask layer as a mask to form an element isolation layer.

Method for fabricating semiconductor element

A method for manufacturing a semiconductor device includes the steps of preparing a semiconductor substrate, forming a lower electrode having a laminated film of Ir and IrOwhose thickness is 100 nm or less over the semiconductor substrate, forming a capacity insulating film comprised of a metal oxide dielectric on the lower electrode, and forming an upper electrode comprised of a precious metal film on the capacity insulating film.

Method for manufacturing a semiconductor device

A method for manufacturing a semiconductor element includes preparing an SOI layer having a transistor forming area and an element isolation area, forming an oxidation-resistant mask layer on the SOI layer, forming a resist mask over the transistor forming area on the oxidation-resistant mask layer, a first etching that etches the oxidation-resistant mask layer using the resist mask so that a predetermined thickness of the oxidation-resistant mask layer remains, a second etching that etches the remaining oxidation-resistant mask layer, using the resist mask and exposing the SOI layer at the element isolation area, and oxidizing the exposed SOI layer using the remaining oxidation-resistant mask layer, to form an element isolation layer. An etching rate during the first etching is higher than during the second etching and a silicon-to-etching selection ratio during the second etching is higher than during the first etching.

Method for manufacturing semiconductor element

An abnormality detection device includes small motion sensors that detect small motions of a person in a house; a data collecting unit that collects and stores sensor signals from the small motion sensors as sensor patterns, and a Markov chain operating unitthat transforms the sensor patterns into a cluster sequence by vector-quantizing input patterns which are obtained by averaging and normalizing the sensor patterns, and calculates a transition number matrix and a duration time distribution of a Markov and so on using a Markov chain model. The abnormality detection device also includes a comparing unit that calculates a characteristic amount (Euclid distance and average log likelihood in an appearance frequency of a Markov chain and an average log likelihood to the duration time distribution of a Markov chain) of a sample activity as against a daily activity based on the obtained transition number matrix and the duration time distribution and so on.

Device and system for detecting abnormality

The present invention aims to provide a method of manufacturing a semiconductor device having an SOI structure, which is capable of setting an etching process so as to cause contact etching to widely have a process margin even in a semiconductor elemental device using an extra-thin SOI layer. The present method is a method of manufacturing a fully depleted-SOI device. A cobalt layer is formed on an SOI layer. Cobalt is transformed into a cobalt silicide layer by heat treatment. An interlayer insulating film is formed on the cobalt silicide layer, and a contact hole is defined in the interlayer insulating film by dry etching. As an etching gas used in such a dry etching step, a CHF3/CO gas is used. An etching condition is set through the use of a dry etching rate held substantially constant by use of the etching gas. Described specifically, etching time is suitable set.

Method of manufacturing semiconductor device having SOI structure

Growing community of inventors

Tokyo, Japan

Kousuke Hara