Intel Corporation

Micron Technology Incorporated

Intle Corporation

Koushik Banerjee

Sanjay Rangan

Robert J Chroneos, Jr

Lu Liu

Tom Mozdzen

Innocenzo Tortorelli

Debendra Mallik

Kiran Pangal

Nevil N Gajera

Hongmei Wang

Mase J Taub

Mattia Boniardi

Enrico Varesi

Jason R Johnson

Robert Douglas Cassel

William L Cooper

Isaiah O Gyan

Jian Jiao

Michael P O'Toole

Sandeepan Dasgupta

Hong Xie

Bidyut K Bhattacharyya

Daniel Chu

Kristopher J Frutschy

John F McMahon

Ajit V Sathe

Siva Natarajan

Praveen Jain

Ashok K Seth

Craig M Randleman

Shravya Gottipati

Sanjay Gupta

Barbara Jane Ultis

Methods, systems, and devices supporting configurable resistivities for lines in a memory device, such as access lines in a memory array are described. For example, metal lines at different levels of a memory device may be oxidized to different extents in order for the lines at different levels of the memory device to have different resistivities. This may allow the resistivity of lines to be tuned on a level-by-level basis without altering the fabrication techniques and related parameters used to initially form the lines at the different levels, which may have benefits related to at least reduced cost and complexity. Lines may be oxidized to a controlled extent using either a dry or wet process.

Configurable resistivity for lines in a memory device

Methods, systems, and devices for a modified write voltage for memory devices are described. In an example, the memory device may determine a first set of memory cells to be switched from a first logic state (e.g., a SET state) to a second logic state (e.g., a RESET state) based on a received write command. The memory device may perform a read operation to determine a subset of the first set of memory cells (e.g., a second set of memory cells) having a conductance threshold satisfying a criteria based on a predicted drift of the memory cells. The memory device may apply a RESET pulse to each of the memory cells within the first set of memory cells, where the RESET pulse applied to the second set of memory cells is modified to decrease voltage threshold drift in the RESET state.

Modified write voltage for memory devices

An apparatus is described. The apparatus includes a cross-point non volatile memory cell array comprised of a first plurality of access lines and a second orthogonal plurality of access lines. Each of the first plurality of access lines are coupled to a first address decoder through a respective pass transistor. The pass transistor is coupled to control circuitry to bias the pass transistor into one of at least two states that include a first active state determined from a second address decoder and a second active state determined from the second address decoder.

Non volatile cross point memory having word line pass transistor with multiple active states

One embodiment provides a memory controller. The memory controller includes a memory controller circuitry and a set pulse determination circuitry. The memory controller circuitry is to identify an address of a target memory cell to be set. The set pulse determination circuitry is to select a positive polarity set pulse if the target memory cell is included in a positive polarity deck or to select a negative polarity set pulse if the target memory cell is included in a negative polarity deck. Each set pulse includes a respective nucleation portion and a respective growth portion. Each portion has a respective current amplitude and a respective time duration.

Set technique for phase change memory

Technology for a memory device is described. The memory device can include an array of memory cells and a memory controller. The memory controller can receive a request to program a memory cell within the array of memory cells. The memory controller can select a current magnitude and a duration of the current magnitude for a programming set pulse based on a polarity of access for the memory cell, a number of prior write cycles for the memory cell, and electrical distances between the memory cell and wordline/bitline decoders within the array of memory cells. The memory controller can initiate, in response to the request, the programming set pulse to program the memory cell within the array of memory cells. The selected current magnitude and the selected duration of the current magnitude can be applied during the programming set pulse.

Tailoring current magnitude and duration during a programming pulse for a memory device

Technology for a memory device is described. The memory device can include an array of memory cells and a memory controller. The memory controller can receive a request to program a memory cell within the array of memory cells. The memory controller can select one or more timing offsets for a programming pulse based on one or more of a polarity of access for the memory cell, a number of prior write cycles for the memory cell, or electrical distances between the memory cell and wordline/bitline decoders within the array of memory cells. The memory controller can initiate, in response to the request, the programming pulse with the one or more selected timing offset to program the memory cell within the array of memory cells.

Tailoring timing offsets during a programming pulse for a memory device

A heat spreader and stiffener device has a stiffener portion extending towards a center of the heat spreader and stiffener device and mountable to a die-side surface of a substrate.

Heat spreader and stiffener having a stiffener extension

An electronic package which has a polygonal shaped heat slug. The heat slug extends from a top surface of a package which has a plurality of vias. The package also has a number of capacitors that are mounted to the top surface. Some of the capacitors are located between the heat slug and the vias. The polygonal shape of the heat slug provides additional space on the top surface so that capacitors can be added without eliminating vias from the package.

Method and apparatus for polygonal heat slug

An integrated circuit package. The package includes a substrate that has a first internal conductive bus and a second internal conductive bus that are located on a common layer of the substrate and dedicated to different power voltage levels. The busses are coupled to external lands located on a first surface of the package by vias that extend through the substrate. The first and second busses are located on a common layer of the substrate. The package contains an integrated circuit which is mounted to a heat slug that is attached to a second surface of the package. The integrated circuit is coupled to bond fingers located on a shelf of the substrate. Some of the bond fingers are connected to the internal busses by conductive strips that wrap around the edges of the shelf. Some of the vias are connected to a whole group of external lands. Grouping the lands to a single via reduces the number of vias on the second surface of the package. The reduction in vias allows additional capacitors to be mounted to the second surface of the package.

Integrated circuit package

A printed circuit board which has an ink block and a first conductive layer that are attached to a solder mask. A first dielectric layer is attached to the first conductive layer. Indicia is formed in the ink block by a laser ablation process. The first conductive layer has a first non-metallized area located beneath the ink block. Eliminating metal beneath the ink block would reduce the amount of energy that is absorbed by the circuit board during the laser ablation process. The printed circuit board has multiple layers of conductive and dielectric material. Some or all of the conductive layers may have non-metallized areas located beneath the ink block.

Metallization removal under the laser mark area for substrates

Heat slug design which facilitates mounting of discrete components on a package without losing lands or pins in the package

Growing community of inventors

Milpitas, CA, United States of America

Koushik Banerjee