Ulvac, Inc.

International Business Machines Corporation

Koukou Suu

Takeshi Masuda

Masahiko Kajinuma

Takakazu Yamada

Masaki Uematsu

Yutaka Nishioka

Yasuhiro Morikawa

Masahisa Ueda

Isao Kimura

Natsuki Fukuda

Hiroto Uchida

Toshiya Yogo

Hiroki Kobayashi

Kazumasa Horita

Takashi Kurimoto

Toshio Hayashi

Mitsunori Henmi

Mitsutaka Hirose

Shin Kikuchi

Chung H Lam

Robert L Bruce

Kyuzo Nakamura

Noriaki Tani

Fabio Carta

Michio Ishikawa

Takehito Jinbo

Yohei Uchida

Gloria Wing Yun Fraczak

Kazuya Tsukagoshi

Kazuhiko Saito

Yutaka Kokaze

Nobuhiro Odajima

Takuya Ideno

Youhei Ogawa

Shinnosuke Mashima

Kazunori Fukuju

Nobusuke Tachibana

Mitsuhiro Endou

Kazushige Komatsu

Matthew Brightsky

Takehito Jimbo

Toshiya Miyazaki

Method(s) and apparatuses for forming a phase change memory. A method includes: forming a crystalline phase-change layer at a first position in along a surface of a first semiconductor layer, and forming an amorphous phase-change layer at a second position along the surface of a second semiconductor layer, wherein the crystalline phase-change layer and the amorphous phase-change layer are in contact.

Method for manufacturing phase change memory

A multi-layered film includes a first electroconductive layer, a dielectric layer, and a second electroconductive layer, which are sequentially layered and disposed on a main surface of a substrate. A lower surface of the dielectric layer comes into contact with an upper surface of the first electroconductive layer, an upper surface and an side surface of the dielectric layer is coated with the second electroconductive layer, and an side end of a portion at which the first electroconductive layer directly overlaps the second electroconductive layer is located inside a side end of the substrate on the main surface of the substrate.

Multi-layered film, method of manufacturing the same, and manufacturing apparatus of the same

A multi-layered film includes an electroconductive layer made of platinum (Pt), a seed layer including lanthanum (La), nickel (Ni), and oxygen (O), and a dielectric layer being preferentially oriented in a c-axis direction, which are at least sequentially disposed on a main surface of a substrate made of silicon.

Multi-layered film and method of manufacturing the same

An ashing device that prevents the ashing rate from changing over time. The ashing device ashes organic material on a substrate including an exposed metal in a processing chamber. The ashing device includes a path, which is formed in the processing chamber and through which active species supplied to the processing chamber pass. The path is defined by a surface on which the metal scattered from the substrate by the active species is collectible, with the surface being formed so as to expose a metal that is of the same kind.

Ashing device

To provide a resistance change device that can be protected from an excess current without enlarging a device size. A resistance change deviceaccording to the present embodiment includes a lower electrode layer, an upper electrode layer, a first metal oxide layer, a second metal oxide layer, and a current limiting layer. The first metal oxide layeris disposed between the lower electrode layerand the upper electrode layer, and has a first resistivity. The second metal oxide layeris disposed between the first metal oxide layerand the upper electrode layer, and has a second resistivity higher than the first resistivity. The current limiting layeris disposed between the lower electrode layerand the first metal oxide layer, and has a third resistivity higher than the first resistivity and lower than the second resistivity.

Resistance change device, and method for producing same

To provide a resistance change element which does not require a forming process and enables reduction of power consumption and miniaturization of the element, and to provide a method for producing it. A resistance change elementaccording to an embodiment of the present invention includes a bottom electrode layer, a top electrode layerand an oxide semiconductor layer. The oxide semiconductor layerhas a first metal oxide layerand a second metal oxide layer. The first metal oxide layeris formed between the bottom electrode layerand the top electrode layer, and in ohmic contact with the bottom electrode layer. The second metal oxide layeris formed between the first metal oxide layerand the top electrode layer, and in ohmic contact with the top electrode layer.

Resistance change element and method for producing the same

[Object] To provide a method and an apparatus for manufacturing a variable resistance element by which a metal oxide layer having a desired resistivity can be precisely formed. [Solving Means] The method of manufacturing the variable resistance element according to an embodiment of the present invention includes a step of forming a first metal oxide having a first resistivity and a step of forming a second metal oxide having a second resistivity different from the first resistivity. The first metal oxide is formed on a substrate by sputtering, while sputtering a first target made of an oxide of metal, a second target made of the metal with a first power. The second metal oxide layer is formed on the first metal oxide layer by sputtering the second target with a second power different from the first power while sputtering the first target.

Method of manufacturing variable resistance element and apparatus for manufacturing the same

A thin film manufacturing method and a thin film manufacturing apparatus are provided to manufacture a thin film with good reproducibility. A dummy substrate is conveyed into a chamber, and a dummy processing gas is supplied to the dummy substrate. Moreover, a product substrate is conveyed into the chamber, and a raw material gas different from the dummy processing gas is supplied to the product substrate. The raw material gas contains metal material for manufacturing a thin film with a metal organic chemical vapor deposition (MOCVD) method. Since the raw material gas is not used as a dummy processing gas, the amount of metal material to be used can be minimized in manufacturing the thin film with good reproducibility.

Thin-film forming method and thin-film forming apparatus

Disclosed is an ashing apparatus and its method of manufacture wherein decrease in processing efficiency is suppressed. Specifically, a shower plate is arranged to face a substrate stage on which a substrate is placed, and diffuses oxygen radicals supplied into a chamber. A metal blocking plate is arranged between the shower plate and the substrate stage and has a through hole through which oxygen radicals pass. In addition, the metal blocking plate has a first layer, which is made of a metal same as the one exposed in the substrate, on the surface facing the substrate.

Ashing apparatus

There is provided an etching method which can form trenches or via holes having desired aspect ratios and shapes in a to-be-processed object made of silicon. The etching method includes: a hydrogen halide-containing gas-based etching step of etching a silicon substrate by introducing a hydrogen halide-containing gas into a vacuum chamber; a fluorine-containing gas-based etching step of etching the silicon substrate by introducing a fluorine-containing gas into the vacuum chamber; a protective film formation step forming a protective film on the silicon substrate by sputtering a solid material; and a protective film removal step of removing part of the protective film by applying radio frequency bias power to a substrate electrode. The fluorine-containing gas-based etching step, the protective film formation step, and the protective film removal step are repeatedly performed in this order.

Etching method

A thin film-forming apparatus, for ensuring uniform plane distribution of properties of a film formed on a substrate surface, has a gas-supply portsupplying a gas mixture from a gas-mixing chamberto a shower head. The port is arranged at the peripheral portion on the bottom face of the gas-mixing chamber so that the gas mixture flows from the upper peripheral region of the head towards the center thereof. An exhaust portdischarging the exhaust gas generated in the film-forming chamberis arranged at a position lower than the level of a stageduring film-formation directing the exhaust gas towards the side wall of the chamberand discharging the exhaust gas through the exhaust port. The stageis designed to move freely up and down to adjust the distance between the shower headand substrate S.

Apparatus for the preparation of film

The present invention herein provides a shower head whose temperature can be controlled in consideration of the film-forming conditions selected and a thin film-manufacturing device which permits the stable and continuous formation of thin films including only a trace amount of particles while reproducing a good film thickness distribution and compositional distribution, and a high film-forming rate and which is excellent in the productivity and the mass-producing ability as well as a method for the preparation of such a film. The shower head is so designed that the shower head structure is incorporated into an upper cap of a film-forming vessel, that a heat-exchange means is disposed in the upper cap to thus control the temperature of the upper cap and to in turn allow heat-exchange to occur at the contact surface between a disk-like shower plate constituting the shower head surface and the upper cap and that the temperature of the shower head can be controlled in consideration of the film-forming conditions selected. A thin film-manufacturing device is equipped with the shower head in its film-forming vessel and a thin film is prepared using the device.

Shower head, device and method for manufacturing thin films

Film-forming apparatus including a film-forming vacuum chamber having a stage for a substrate, a chamber for mixing gas comprising a raw gas and a reactive gas connected to the film-forming chamber, a chamber for vaporizing the raw material, and a gas head for introducing the mixed gas into the film-forming chamber, disposed on the upper face of the film-forming chamber and opposed to the stage. Particle traps with controllable temperatures are positioned between the vaporization chamber and the mixing chamber and on the downstream side of the mixing chamber. When forming a thin film with the apparatus, a reactive gas and/or a carrier gas are passed through the film-forming chamber while opening a valve in a by-pass line, connecting the primary side to the secondary side of the particle trap arranged at the downstream side of the mixing chamber. The valve is then closed and the film-forming operation is initiated.

Film-forming apparatus and film-forming method

An etching method and an etching system are adapted to produce a high etch selectivity for a mask, an excellent anisotropic profile and a large etching depth. An etching system according to the invention comprises a floating electrode arranged vis-&#xe0;-vis a substrate electrode in a vacuum chamber and held in a floating state in terms of electric potential, a material arranged at the side of the floating electrode facing the substrate electrode to form an anti-etching film and a control unit for intermittently applying high frequency power to the floating electrode. An etching method according to the invention uses a material arranged at the side of the floating electrode opposite to the substrate electrode to form an anti-etching film as target and only rare gas as main gas and is adapted to repeat a step of forming a film on the substrate by sputtering by applying high frequency power to the floating electrode and a step of subsequently etching the substrate by suspending the application of high frequency power to the floating electrode and introducing etching gas into the vacuum chamber in a predetermined sequence.

Etching method and system

This dry cleaning method for a plasma processing apparatus is a dry cleaning method for a plasma processing apparatus that includes: a vacuum container provided with a dielectric member; a planar electrode and a high-frequency antenna that are provided outside the dielectric member; and a high-frequency power source that supplies high-frequency power to both the high-frequency antenna and the planar electrode, to thereby introduce high-frequency power into the vacuum container via the dielectric member and produce an inductively-coupled plasma, the method comprising the steps of: introducing a gas including fluorine into the vacuum container and also introducing high-frequency power into the vacuum container from the high-frequency power source, to thereby produce an inductively-coupled plasma in the gas including fluorine; and by use of the inductively-coupled plasma, removing a product including at least one of a precious metal and a ferroelectric that is adhered to the dielectric member.

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Susono, Japan

Koukou Suu