Hitachi, Ltd.

Koukichi Ouhata

Kenichi Natsui

Hiroyuki Sugawara

Masato Isogai

Terunori Warabisako

Takayoshi Seki

Kiyoshi Miyake

Keiji Arimatsu

Yasunori Ohno

Yukio Nakagawa

A substrate to be modified is placed in a vacuum vessel, a reducing atmosphere is provided over the substrate and simultaneously therewith the substrate is irradiated with accelerated ions, whereby oxygen which bonds to the substrate is freed from the substrate, the oxygen bonds to a material which forms the reducing atmosphere and the surface of the substrate is modified by the accelerated ion. The surface of the substrate can be thus efficiently modifed at relatively low temperatures. Furthermore, by evaporating carbon for an alumina substrate or alumina powder or providing hydrocarbon gas over the alumina substrate or alumina powder in a vacuum vessel, the alumina substrate or alumina powder is providing in the reducing atmosphere and the alumina substrate or alumina powder is irradiated with accelerated nitrogen ions from an ion source, whereby aluminum and oxygen which constitute the alumina substrate or alumina powder are cut off from each other by irradiation with the accelerated nitrogen ions. The oxygen reacts with carbon or hydrocarbon gas which forms the reducing atmosphere to form carbon monoxide or carbon dioxide, which is evacuated. On the other hand, the aluminum is modified to aluminum nitride by the accelerated nitrogen ions or nitrogen particles. That is, the surface of the alumina substrate or alumina powder can be efficiently modifed at relatively low temperatures.

Method for surface modification and apparatus therefor

This invention relates to a method and an apparatus for forming a film, which are suitable for forming a film of a semiconductor, dielectric, metal, insulator, or organic substance. In order to form a film of high purity and quality at high speed, a particle beam such as an ion beam, an electron beam, or a plasma is applied to a sputtering target comprising a substance formed by bonding atoms or molecules with either van der Waals forces or hydrogen bonding forces, the particles are sputtered thereby from the target, fly in the space in the vacuum chamber, reach the substrate on which they are deposited to form a desired film. To form an organic film free of pinholes, impurities, or disorder in the molecular composition and arrangement in a large area at high speed, a particle beam of about 10 eV or less is applied to the target comprising an organic compound disposed in a vacuum, the particle beam having a level of energy as high as can break the molecular crystalline bonds and not high enough to break the nonmolecular crystalline bonds, out of the molecular crystalline bonds by van der Waals forces connecting the atoms constituting the organic compound and the nonmolecular crystalline bonds by covalent bonds, for example, other than van der Waals forces, and the sputtered particles from the target are deposited on the substrate facing the target to form a desired film of an organic compound.

Method and apparatus for forming a film

A cathode-ray tube has in a neck section of a hermetically sealed, evacuated envelope an electron-gun mount assembly in which of a cathode for emitting an electron beam, a first grid electrode section for forming a crossover point and for accelerating the electron beam and a second grid electrode section for focusing the electron beam are mounted on a plurality of insulative supporting bars. A conductive member is provided on an outer surface portion of the neck section, an inner surface portion thereof, and/or an outer surface portion of the supporting bars which surround a portion of the electron-gun mount assembly including the first grid electrode section but excepting the second grid electrode section.

Cathode-ray tube

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Hitachi, Japan

Koukichi Ouhata