Ulvac, Inc.

Koukichi Kamada

Junichi Hamaguchi

Shuji Kodaira

Koji Suzuki

Satoru Toyoda

Kazumasa Horita

Yuta Sakamoto

Akifumi Sano

Yukinobu Numata

Yoshiyuki Kadokura

Tomoyuki Yoshihama

Shigeo Nakanishi

Joji Hiroishi

A method of manufacturing a semiconductor device includes a groove portion formation process of forming a groove portion in a base body, a bather layer formation process of forming a barrier layer covering at least the inner wall surface of the groove portion, a seed layer formation process of forming a seed layer covering the barrier layer, and a seed layer melting process of causing the seed layer to be melted using the reflow method. The seed layer is made of Cu.

Method of manufacturing semiconductor device

A film formation apparatus includes: a chamber having an inner space in which both a body to be processed and a target are disposed so that the body to be processed and the target are opposed to each other, a first magnetic field generation section generating a magnetic field in the inner space to which the target is exposed; a second magnetic field generation section generating a perpendicular magnetic field so as to allow perpendicular magnetic lines of force thereof to pass between the target the body to be processed; and a third magnetic field generation section disposed at upstream side of the target as seen from the second magnetic field generation section.

Film formation apparatus

Growing community of inventors

Susono, Japan

Koukichi Kamada