Sanyo Electric Co., Ltd.

Tottori Sanyo Electric Co., Ltd.

Kouji Tominaga

Masayuki Hata

Yasuhiko Nomura

Nobuhiko Hayashi

Tatsuya Kunisato

Kunio Takeuchi

Yasuhiko Matsushita

A first buffer layer is formed on a substrate at a lower temperature than a single-crystal-growth-temperature, one or more of a layer composed of a nitride containing neither Ga nor In, a layer which has two or more thin films having different moduli of elasticity cyclically laminated therein, and a layer having an Al composition ratio which decreases and a Ga composition ratio which increases in a direction from the first buffer layer to a device-constituting layer are formed as a second buffer layer on the first buffer layer at the single-crystal-growth-temperature, and a device-constituting layer composed of a nitride semiconductor is formed on the second buffer layer.

Semiconductor device and method of fabricating the same

This invention provides a light-emitting diode which is capable of extracting white light, manufactured readily and highly reliable. The light-emitting diode is fabricated by laminating a buffer layer , an Si (silicon)-doped GaN fluorescent layer , an n-GaN layer , an MQW emission layer and a p-GaN layer on a sapphire substrate in this order. The Si-doped GaN fluorescent layer is doped higher concentration of Si (silicon) than a conventional Si-doped GaN layer with sufficient good crystallinity. Such a Si-doped GaN fluorescent layer is excited by blue light generated in the MQW emission layer and emits yellow light. The yellow light is the complement for the blue light generated in the MQW emission layer. White light can be obtained by blending and extracting both of blue light and yellow light.

Semiconductor LED composed of group III nitrided emission and fluorescent layers

The present invention provides an electrode making good ohmic contact with an n-type nitride semiconductor without requiring heat treatment at high temperature, wherein an aluminum layer, a silicon layer, a nickel layer and a gold layer are laminated in this order on an n-type gallium nitride based semiconductor, to form an n-type electrode.

Electrode of n-type nitridide semiconductor, semiconductor device having

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Hirakata, Japan

Kouji Tominaga