Sharp Kabushiki Kaisha Corporation

Kouji Taniguchi

Masaru Yoshida

Akiyoshi Mikami

Koichi Tanaka

Shigeo Nakajima

Kousuke Terada

Takashi Ogura

Hiroaki Nakaya

Takuo Yamashita

Katsushi Okibayashi

Koicji Tanaka

A method is disclosed for making a thin film capacitive memory device with a high dielectric constant. A lower electrode of yttrium or hafnium is formed on a semiconductor substrate. A dielectric insulating film is formed on the lower electrode, and the dielectric insulating film is annealed such that at thinner portions the dielectric insulating film, the lower electrode is oxidized more heavily than at thicker portions of the dielectric insulating film. An upper electrode is formed on the dielectric insulating film.

Method for forming a thin film capacitive memory deivce with a high

A process for preparing an electroluminescent film which comprises causing a substrate held at a high temperature to simultaneous contact two kinds of vapors of (a) Group II element and a Group VI element or a compound thereof, capable of forming a Group II-VI compound semiconductor, and (b) a halide of an element capable of acting as luminescent centers in the Group II-VI compound semiconductor, in the presence of flowing hydrogen or an inert gas, whereby a thin electroluminescent film comprising the Group II-VI compound semiconductor and containing the element forming the luminescent centers is formed on the surface of the substrate.

Process for preparing an electroluminescent film

A semiconductor device comprising a capacitor which comprises a lower electrode, a dielectric insulating film of a metal oxide, and a upper electrode. The lower electrode is made of at least yttrium (Y) or hafnium (Hf).

Thin film capacitive memory device with a high dielectric constant

Disclosed is an electroluminescent device including a substrate and an electroluminescent film on the substrate wherein the electroluminescent film is composed of a II-VI group compound semiconductor matrix and an electroluminescent center element; the improvement being present in that the electroluminescent film has a crystal structure of a hexagonal system, and contains the electroluminescent center element in a concentration (Ci) of 0.5 to 4 at. % within a thickness of 0.2 micrometer from the side of the substrate and in a concentration (Cr) of 0.15 to 0.7 at. % at the residual portion, and Ci is larger than Cr, and the process for preparing the same.

Method of manufacturing an electroluminescent device

A multi-color electroluminescent panel comprising common electrodes and a plurality of transparent electrodes, an EL light emitting layer disposed between the common and transparent electrodes and capable of exhibiting a hysteresis in light emission luminance versus applied voltage characteristic, and band-pass color filters provided on the EL light emitting layer for passing therethrough light of a particular color emitted from the EL light emitting layer.

Electroluminescent panel

A vapor deposition apparatus for depositing thin film on substrates in which solid starting materials are used. In this apparatus, a carrier gas flows up and down in the same direction as gas convection, such that the effect of gas convection is minimized and film thickness and impurity concentration are uniform over the substrate surface. This uniformity is achieved by orienting a main reaction tube in a vertical direction, attaching two branch reaction tubes at the top of the main reaction tube, and venting carrier gas out the bottom of the main reaction tube. Alternately, the main reaction tube can be oriented horizontally, with the substrates being carried on a holder within a container having pores on its top and bottom.

Vapor deposition apparatus for using solid starting materials

A semiconductor device comprising a capacitor having a lower electrode of a Si-containing material, an aluminum oxide film formed on the surface of the lower electrode, a dielectric film of Ta.sub.2 O.sub.5 formed on the aluminum oxide film and an upper electrode provided on the dielectric film.

Semiconductor device and method for preparing the same

A thin-film electroluminescence (EL) device capable of displaying multiple colors has a laminated structure wherein back electrodes in stripes, a lower dielectric layer, a luminescence layer, an upper dielectric layer and transparent electrodes in stripes are sequentially formed on a transparent substrate in this order. The back electrodes intersect the transparent electrodes at right angles, and areas of the device where the back electrodes confront the transparent electrodes form picture elements. This device also has at least first and second color filters. The first and second filters are placed not only in corresponding picture-element areas of the transparent electrodes, but also in non-picture-element areas of the transparent electrodes and an upper dielectric layer such that the first color filter overlaps the second color filter in the non-picture-element areas. The first and second color filters in combination have transmissivities to visible lights similar to those of a black filter, thereby restraining external light coming to the non-picture-element areas from being reflected. Further, the device can include a groove in a transparent sealing plate formed above the transparent electrode. The transparent sealing plate is bonded to the transparent substrate with an adhesive and the groove captures excess adhesive to avoid interference between the adhesive and the picture elements.

Thin-film electroluminescence device for displaying multiple colors with

A thin film EL panel emits its light in response to the application of an electric field so as to make it possible to correspondingly create a multi-color display. The display created is higher in light emission efficiency, lower in power consumption, higher in function and higher in quality with the electrodes being sufficient in a heat resisting property with respect to the main thermal process.

Thin film EL panel with opaque electrode

Multi-color electroluminescent panel

Disclosed is an improvement of the chemical vapor deposition (CVD) process for preparing an electroluminescent device having a large area and a large size. The process includes forming a luminescent layer on a substrate by a reduced-pressure chemical vapor deposition method wherein a source material gas is introduced into a reaction chamber. The reaction chamber includes a screening means which screens the source material gas flow in the chamber to form a first area in which the gas is flowing and a second area in which the gas substantially does not flow. The screening means has apertures for connecting the first area and second area. the substrate is placed in the second area, to which the source material is supplied by means of gas diffusion.

Process for preparing a thin film electroluminescent device

A process for preparing an electroluminescent device includes the steps of forming an insulating layer and a luminescent layer on a substrate, wherein the insulating and luminescent layers are respectively formed at different forming areas in the same deposition chamber.

Process for preparing an electroluminescent device

Electroluminescent device

A thin film electroluminescent(EL) device includes a luminescent layer, both sides of which are covered with insulating layers, and at least one pair of electrodes sandwiching the luminescent layer through the insulating layers. The luminescent layer is composed of zinc sulfide in which Gd and a luminously effective amount of a rare earth element, acting as luminescent center, are doped at a total amount of 1-4 atomic percent.

Thin film electroluminescent device containing gadolinium and rare earth

A thin film EL displaying apparatus includes a first thin film EL element and a second thin film EL element. Each element is composed of an EL layer sandwiched between a pair of upper and lower electrodes, a first and a second substrates provided respectively with the first and the second thin film EL elements, and an insulating film on the upper and lower surfaces on which conductive films for leads are formed. The first and the second substrates are laminated in a manner that the first and the second thin film EL elements face each other and the insulating films are sandwiched therein. The insulating film is disposed such that one end of each of the conductive films on upper and lower surface thereof is brought in contact with, and is electrically connected to the upper electrode or lower electrode of the first EL element and the respectively corresponding electrode of the second EL elements. The other end of each of the conductive films can be connected to an external driving circuit.

Growing community of inventors

Nara, Japan

Kouji Taniguchi