Tdk Corporation

Renesas Electronics Corporation

Nec Electronics Corporation

Nec Corporation

Mitsubishi Denki Kabushiki Kaisha

Renesas Technology Corp.

Utsunomiya Kogyo Co., Ltd.

Kouji Tanaka

Akira Sasaki

Kazuhiko Oda

Satoshi Yamaguchi

Toru Mizuno

Tetsuji Maruno

Yasuhiro Matsumoto

Makoto Takahashi

Mikio Asakura

Akitoshi Yoshii

Kyoji Yamasaki

Mikio Tsujiuchi

Kazushige Ito

Shunji Kubo

Yasuki Yoshihisa

Seiya Isozaki

Shuichi Miura

Tetuji Maruno

Masayuki Okabe

Hideo Utsunomiya

Kazunari Yamaguchi

Yukitaka Hisamatsu

Takao Abe

A semiconductor substrate has a main surface with an n type offset region having a trench portion formed of a plurality of trenches extending in a direction from an ndrain region toward an nsource region. The plurality of trenches each have a conducting layer therein extending in the main surface in the direction from the ndrain region toward the nsource region.

Semiconductor device and method for manufacturing the same

A spraying means is arranged on the scum-flowing wall surface side of wall surfaces forming a scum inlet of a scum discharging mechanism. The spraying means sprays pressured water upward along the wall surface on the scum-flowing side from when a part of the scum inlet is submerged in water until the scum begins to flow into the scum inlet. As a result, even large lumps of scum exceeding 10 cm in thickness (diameter) may be lead smoothly into a pipe by the pressured water, and the amount of discharged water accompanying scum discharge may be reduced to 1/20 to 1/30 than by a conventional scum removing apparatus.

Scum removing apparatus

Provided is a semiconductor device in which occurrence of humps can be suppressed and variations in characteristics of the semiconductor device can be suppressed. The semiconductor device includes: an element isolation film () formed in a semiconductor layer, the element isolation film () defining an element formation region; a gate electrode () formed above the element formation region, the gate electrode () having ends respectively extending above the element isolation film (); and impurity regions () which are to be a source region and a drain region which are formed in the element formation region so as to sandwich therebetween a channel formation region immediately under the gate electrode (), the gate electrode () including at each of the ends thereof a high work function region () in which work function is higher than work function in other regions over at least a part of an interface between the element formation region and the element isolation film ().

Semiconductor device

Provided is a semiconductor wafer with a scribe line region and a plurality of element forming regions partitioned by the scribe line region, the semiconductor wafer including: conductive patterns formed in the scribe line region; and an island-shaped passivation film formed above at least a conductive pattern, which is or may be exposed to a side surface of a semiconductor chip obtained by dicing the semiconductor wafer along the scribe line region, among the conductive patterns, so that the island-shaped passivation film is opposed to the conductive pattern.

Semiconductor wafer, semiconductor device, and method of manufacturing semiconductor device

A semiconductor device includes an element isolation film formed on a semiconductor substrate surface of one conductivity type, a gate electrode having one pair of end portions located on a boundary between an element isolation film and an element forming region, a source region and a drain region of a reverse conductivity type arranged to sandwich a region immediately below a gate electrode, and an impurity diffusion region of the one conductivity type formed in the element forming region. The source region is separated from a region on a boundary side between the element isolation film and the element forming region in the region immediately below the gate electrode in the element forming region. In the impurity diffusion region, a portion adjacent to the region on the boundary side is arranged between the source region and the element isolation film, and is in contact with the source region and the region on the boundary side. The impurity diffusion region is not arranged between the drain region and the element isolation film.

Semiconductor device with suppressed hump characteristic

A production method of a multilayer electronic device having an element body configured by alternately stacked dielectric layers formed by using dielectric paste and internal electrode layers formed by using conductive paste: wherein an adding quantity of a co-material included in conductive paste for forming internal electrode layers at the outermost positions in the stacking direction is larger than an adding quantity of a co-material included in conductive paste for forming internal electrode layers at the center position in the stacking direction when adding conductive particles and co-material particles to the conductive paste.

Multilayer electronic device and the production method

An EEPROM having a nonvolatile memory cell is provided. The nonvolatile memory cell has a first MOS transistor and a second MOS transistor. The first MOS transistor and the second MOS transistor have a gate electrode in common, the gate electrode being a floating gate electrically isolated from a surrounding circuitry. The first MOS transistor and the second MOS transistor are of a same conductivity type.

EEPROM

An EEPROM (Electrically Erasable and Programmable Read Only Memory) has a first MOS transistor and a second MOS transistor. The first MOS transistor and the second MOS transistor have a common gate electrode and constitute one memory cell. A program operation and an erase operation are carried out by using the first MOS transistor. A read operation is carried out by using the second MOS transistor.

EEPROM and method of driving the same

A manufacturing method of conductive paste comprising arranging process (Sto S) of ceramics particles, arranging process (Sto S) of wetted metal particles, forming process (S) of slurry wherein metal particles and ceramics particles are mixed and dispersion treatment process (S) by applying collision to the slurry. The arranging process of wetted metal particles comprises, a process (S) of adding solvent, compatible with organic component in conductive paste and incompatible with water, to undried water washed metal particles, a process (S) of adding surfactant, a process (S) of separating water from the metal particles and a process (S) of adding acetone or the other second solvent.

Manufacturing process of conductive composition and a manufacturing process of conductive paste

A ceramic electronic element having improved the continuity of inner electrode layers while suppressing the decrease in adhesion between its dielectric layers and inner electrode layers and the deterioration in functions of the inner electrode layers, and a method of making the same are provided. In the method of making a ceramic capacitor () in accordance with the present invention, an electrode paste () is applied to a surface () of a green sheet () and fired, so as to form a dielectric layer () laminated with an electrode layer (). Since the electrode paste () is doped with a BaTiOpowder, the adhesion between the dielectric layer () and inner electrode layer () after firing is significantly restrained from lowering, and the sintering start temperature of the electrode paste () is close to that of the green sheet (). Since the electrode paste () is doped with a metal resinate, functions of the inner electrode layer () are significantly restrained from deteriorating when the insulating BaTiOpowder is added to the electrode paste (), and the sintering start temperature of the electrode paste () approaches that of the green sheet ().

Method of making ceramic electronic element

In a semiconductor device, a plurality of first diffusion regions of a first conductive type are formed on a diffusion layer well of the first conductive type. A plurality of second diffusion regions of a second conductive type are formed on the diffusion layer well of the first conductive type. An impurity concentration of each of the plurality of first and second diffusion regions is desirably higher than that of the diffusion layer well. The plurality of first diffusion regions are connected to a first common node as an anode and the plurality of second diffusion regions are connected to a second common node as a cathode.

A composite substance for forming a conductive paste, comprises a solvent and metal or metal compound particles. The solvent is compatible with an organic component included in the conductive paste, and the metal or metal compound particles are dried metal or metal compound particles having the second solvent adhering to the surface thereof. The conductive paste comprises an organic vehicle, a solvent, and the composite substance which is mixed with the organic vehicle and the solvent. The method for manufacturing the composite substance comprises the steps of washing metal or metal compound particles with water, adding a solvent that is compatible with an organic component included in the conductive paste, thereby replacing water components, and drying the metal or metal compound particles having the solvent adhering to the surface thereof.

Composite substance containing metal particles, conductive paste and manufacturing method thereof

The present invention provides a magnetic head construction, a connection method and a connecting device by which excellent electrical connection can be carried out between a core electrode and a substrate land face on a flexure in a magnetic head employing the piggy back system. In order to attain the object of interest, in the present invention, a fine adjustment actuator is arranged between a core and a flexure; a projection portion which is projected from the fine adjustment actuator when viewed from the flexure is provided in the core; a hole is provided in the position, on the flexure, corresponding to the projection portion; only the core is fixed by a support portion provided through the hole portion and a clamp pin without applying any load to the fine adjustment actuator; and while maintaining this fixing state, an electrode and a substrate land are bonded to each other with a wire.

Magnetic head, and device and method for manufacturing the same

A composite substance for forming a conductive paste, comprises a solvent being compatible with an organic component included in the conductive paste, and metal particles wetted by the solvent. The conductive paste comprises an organic binder, the composite substance and an organic solvent mixed with the organic binder and the composite substance. The method for manufacturing the composite substance comprises the step of adding the solvent to undried metal particles having been washed with water, the solvent being compatible with the organic binder included in the conductive paste and incompatible with water so that the water is replaced by the solvent. The method for manufacturing the conductive paste comprises the step of mixing an organic binder and an organic solvent with the composite substance.

In an oscillation detection circuit an internal voltage is compared with an oscillation detection level corresponding to a reference voltage plus a predetermined variation and when a voltage having a level higher than the oscillation detection level is observed a predetermined number of times within a predetermined period of time a decision is made that the internal voltage is in oscillation and an oscillation detection signal having the high level is output. In the internal power supply voltage down conversion circuit when a p-channel MOS transistor receives the oscillation detection signal of the high level the transistor turns off to interrupt a current supplied from a drive transistor to an internal power supply node.

Growing community of inventors

Tokyo, Japan

Kouji Tanaka