Kabushiki Kaisha Toshiba

Tokyo Shibaura Denki Kabushiki Kaisha

Toyo Seikan Kaisha, Ltd.

Ricoh Company, Ltd.

Victor Company of Japan, Limited

Toyo Seikan Daisha, Ltd.

Kouji Suzuki

Mitsushi Ikeda

Hideo Kurashima

Kazuo Taira

Tsuneo Imatani

Kouhei Suzuki

Shuichi Uchikoga

Toshio Aoki

Kazuo Kobayashi

Takashi Miyazaki

Rei Hasegawa

Masahiko Akiyama

Masahide Harada

Shigeru Komatsu

Hitoshi Nagato

Satoshi Takahashi

Manabu Mochizuki

Katsuhiro Imazu

Yoshitsugu Maruhashi

Masaki Atsuta

Nobuo Iwase

Miki Mori

Mitsuo Tanaka

Tetsuo Miyazawa

Akinori Hongu

Masato Mihara

Norimasa Maida

Kaichi Fukuda

Kazuaki Tagawa

Hiroyuki Kitamura

Mamoru Tominaga

Sachiko Machii

Kenichirou Nakamaki

Nobuki Ibaraki

Masami Kakinoki

Takuya Shimano

Masao Wakatsuki

Yoshiki Takesue

Kazuhiro Satoh

According to one embodiment, a display device includes an interference filter including following layers, and a display layer. The first common layer includes first and second regions. The second common layer faces the first common layer. The first spacer layer is provided between the first and second common layers and includes first and second portions facing the first and second regions. The thickness of the first portion is different from the thickness of the second portion. The second spacer layer faces at least one of the first and second portions through the second common layer and is made of the same material as that of the first spacer layer. The coating layer faces the second common layer through the second spacer layer.

Interference filter, display device, and display device manufacturing method

There is provided the method of manufacturing a polycrystalline semiconductor thin film, in which an amorphous semiconductor thin film is formed on an insulating substrate, and the amorphous semiconductor thin film is transformed into a polycrystalline semiconductor thin film. In this method, an energy beam is irradiated onto a predetermined region of the amorphous semiconductor thin film via a mask prepared by forming energy beam transmitting regions on a transparent plate as a plurality of patterns, and the region on which the energy beam is irradiated is changed so as to move the predetermined region on the amorphous semiconductor thin film in order.

Method of manufacturing polycrystalline semiconductor thin film

A laminate obtained by laminating a resin composed chiefly of a polyester on a base material, said resin layer having a melt viscosity ratio (R) defined by the following formula (1),

Laminate and container made of the same

The present invention discloses a tape cassette mounted with an IC memory and an IC connecting system provided in a recording and reproducing apparatus for the tape cassette. The tape cassette is provided with a recess on the back side of the cassette. The recess has at least a round corner at a distal end thereof. The IC memory package has a rectangular shape with at least a round corner and with a cutout portion at a corner other than the round corner and a terminal portion on the package, wherein the IC memory package is mounted in the recess by causing the round corner of the IC memory package to be snugly fitted with the round corner of the recess. The connecting system is used for electrically connecting the terminals of the IC memory to the apparatus when the tape cassette is loaded into the apparatus. The IC connecting system has a connector including electrically conductive pressure contact members having one end for connecting the terminals of the IC memory under pressure and the other end connected to an IC drive circuit in the apparatus. The IC connecting system also automatically controls the connecting operation so as to obtain a reliable connection between the terminals of the IC memory and the contact member.

Tape cassette mounted with IC memory package and IC connecting system

The present invention provides a strong heat seal to a thermoplastic polyester container which can withstand hot water treatment such as retorting, and to a heat sealed container. A heat-sealable closure is also provided. It is composed of a laminate consisting of a heat-seal layer comprising as a main component a copolymerized polyester resin having a softening temperature of 120.degree. C. and a glass-transition temperature of 30.degree. to 85.degree. C., a metal substrate, and an epoxy-phenol resin primer layer interposed between them. Preferably, the container has a heat seal portion composed of a thermoplastic polyester having a fusion temperature in the crystalline state of at least 200.degree. C. This polyester portion is oriented and crystallized or heat-crystallized.

Heat-sealed closure for polyester container

A thin-film semiconductor element provided on a channel area with a channel protection layer, characterized by the fact that a source electrode layer and a drain electrode layer respectively have overlapping areas on the channel protection layer, the side walls of the source electrode layer and the drain electrode layer extend in the overlapping areas beyond the side wall of the channel protection layer in at least one direction of the width thereof, and the source electrode layer and the drain electrode layer possess points of overlap intersection with the semiconductor layer at the points of overlap intersection thereof with the channel protection layer. Owing to the construction described above, the leakage current generated by exposure to light can be decreased and the thin-film semiconductor element can be produced by a simple process of manufacture.

Thin-film transistor element having a structure promoting reduction of

A thin film transistor protection circuit includes a outer short-circuit line formed around a pixel electrode driving thin film transistor on an array substrate, and a discharging thin film transistor having a gate electrode and a current path connected between a wiring line connected to the pixel electrode driving thin film transistor and the outer short-circuit line. The protection circuit further includes a charging circuit for charging the gate electrode of the discharging thin film transistor according to a difference in potential between the conductive and wiring lines.

Thin film transistor protection circuit

An active-matrix type liquid-crystal display comprising a matrix display panel including a glass substrate, pixel electrodes formed on the substrate, signal lines formed on the substrate, gate lines formed on the substrate, and switching elements formed on the substrate, signal-line drive ICs for applying signal voltages to the signal lines, and gate-line drive ICs for driving the switching elements. The display further comprises power-supply potential control circuits for changing the first and second power-supply potentials (VDD, VSS) of the signal-line drive ICs, each by a predetermined value, in accordance with the signal voltages to be applied to the pixel electrodes.

Active matrix type display apparatus

A highly-integrated semiconductor IC device includes a semiconductive substrate, on which an internal function circuit is arranged to have a first plurality of input terminals and a second plurality of output terminals. A logic circuit is arranged on the substrate and is connected to the internal circuit through the output terminals. The logic circuit has a third plurality of output terminals, which are less in number than the outputs of the internal circuit. These logic output terminals are coupled to the same number of inspection terminals, which are adapted to be coupled to a known electric inspection tool. The logic circuit processes the voltage signals appearing at the output terminals of the internal circuit so as to cause these signals to decrease in number. The output signals of the logic circuit are sent to the inspection terminals as monitor signals, based on which an inspection is carried out to determine whether the internal circuit operates normally.

Integrated circuit device with internal inspection circuitry

An active matrix liquid crystal display device in a normally white mode comprises two bus lines corresponding to pixel electrodes. The bus lines are formed under the pixel electrodes with an insulating layer interposed therebetween. First and second alternating current voltages whose phases differ from each other by 180.degree., are applied to the bus lines. The first and second voltages satisfies an equation of C.sub.1 .multidot.V.sub.1 =C.sub.2 .multidot.V.sub.2 (V.sub.1 and V.sub.2 represent first and second voltages, respectively, and C.sub.1 and C.sub.2 represent capacitances between the bus lines and the pixel electrodes, respectively). A pixel electrode having represented a bright spot defect is short-circuited with one of the bus lines, and the voltage of the bus line is applied to the pixel electrode. The bright spot defect is therefore changed to a dark spot defect.

Liquid crystal display device

Heat-sealed closure for polyester container and container having said

In a transmission liquid crystal display apparatus, light rays emitted from a light source and reflected from a mirror are collimated by a collimator lens and incident in a liquid cell structure through a polarization layer. The light rays emerged from the structure are transmitted through an another polarization layer and diffused by a diffusion layer. The diffusion light rays pass through a filter layer to a viewer.

Transmission liquid crystal display apparatus

A liquid crystal display device includes a matrix array substrate, an upper substrate, and a liquid crystal layer sealed between the substrates. The matrix array substrate has a plurality of first display electrodes connected to thin film transistors which are arranged on a substrate, and an insulation film covering the first display electrodes and the thin film transistors. A plurality of second display electrodes are arranged on the insulation film and face the corresponding first display electrodes to form a capacity connection therewith. The second display electrodes are applied with potentials by the first display electrodes. A transmission factor of the liquid crystal layer is variable in accordance with a potential applied between the second display electrodes and a transparent conductive film of the upper substrate.

A method for manufacturing thin-film transistor comprises steps of sequentially forming in laminar state a gate film, an insulating film and a conductive film having a transparent electrode film and an amorphous silicon film added with an impurity thereto on the top surface of glass substrate or layer; irradiating ultraviolet ray from the bottom surface side of the substrate to expose negative photoresist film on said conductive film and to etch the same; and forming an amorphous semiconductive film on the structure. In this manner, source and drain electrodes are respectively self-aligned with the gate electrode and contacted therewith through a semiconductive film and a low resistive and semiconductor film.

Method of manufacture thin film transistor

A thin-film transistor circuit used to drive a liquid crystal display device is disclosed, which circuit includes a plurality of circuit components which are arranged in the form of a matrix as to be connected with data lines for supplying an image signal and with address lines for supplying a gate pulse signal, whereby the circuit components control the picture element display in the unit picture element region of the LCD device. Each circuit component has a capacitor connected to the unit picture element region for temporarily storing the image signal, and a TFT transfer gate having a gate electrode connected to one of the address lines, a source electrode connected to one of the data lines, and a drain electrode connected to the capacitor. The transfer gate performs the switching operation in response to the gate pulse signal, thereby transferring the image signal to the capacitor. A compensating pulse signal which is synchronized with the gate pulse signal and has a polarity opposite to that of the gate pulse signal is applied to the capacitor, thereby preventing a decrease in the image signal voltage across this capacitor due to the parasitic capacitance component existing in the thin-film transistor.

Thin-film transistor circuit

Growing community of inventors

Yokohama, Japan

Kouji Suzuki