Sumitomo Metal Industries, Inc.

Sumitomo Mitsubishi Silicon Corporation

Sumco Corporation

Kouji Sueoka

Yasuo Koike

Shigeru Umeno

Shinsuke Sadamitsu

Nobumitsu Takase

Hideshi Nishikawa

Eiichi Asayama

Masataka Horai

Masanori Akatsuka

Hisashi Katahama

Makoto Ito

There are provided silicon single crystal, silicon wafer, and epitaxial wafer having a sufficient gettering effect suitable for a large-scale integrated device. The silicon single crystal which is suitable for an epitaxial wafer is grown with nitrogen doping at a concentration of 1&times;10 atoms/cm or more, or with nitrogen doping at a concentration of 1&times;10 atoms/cm and carbon doping at a concentration of 0.1&times;10 &minus;5&times;10 atoms/cm and/or boron doping at a concentration of 1&times;10 atoms/cm or more. The silicon wafer is produced by slicing from the silicon single crystal, and an epitaxial layer is grown on a surface of the silicon wafer to produce the epitaxial wafer. The present invention provides an epitaxial wafer for a large-scale integrated device having no defects in a device-active region and having an excellent gettering effect without performance of an extrinsic or intrinsic gettering treatment.

Silicon single crystal, silicon wafer, and epitaxial wafer.

Method of manufacturing silicon epitaxial wafer

Growing community of inventors

Amagasaki, Japan

Kouji Sueoka