Tokyo Electron Limited

Tokyo Electron Limi Ted

Kouji Shimomura

Akihiko Tsukada

Shintaro Aoyama

Daisuke Toriya

Kazuyoshi Yamazaki

Akihiko Hiroe

Kenji Homma

Miki Aruga

A disclosed substrate processing method in a single wafer substrate processing device including a first process position for introducing nitrogen atoms to a high-dielectric film and a second process position for performing heat treatment on the high-dielectric film includes: successively conveying plural substrates to be processed to the first process position and the second process position one by one; and successively performing the introduction of nitrogen atoms and the heat treatment on the high-dielectric film on the substrates to be processed, wherein the treatment on the substrate to be processed is started within 30 seconds at the second process position after the process at the first position.

High-dielectric film substrate processing method

A method of forming a metal silicate film on a silicon substrate in a processing container is disclosed that includes the steps of (a) forming a base oxide film on the silicon substrate by feeding an oxidation gas into the processing container; and (b) forming the metal silicate film on the base oxide film by continuing to feed the oxidation gas and by feeding a first gaseous phase material formed of an amidic organic hafnium compound and a second gaseous phase material formed of a silicon-containing material into the processing container.

Film formation method and recording medium

A film processing device using vaporized liquid source capable of confirming the flow control accuracy of flow control equipment such as a mass flow controller () controlling the flow of the liquid source without separating the flow control equipment from piping and disassembling the piping, comprising a bypass passage () for bypassing a part of a washing fluid feed passage () for feeding washing fluid to a liquid source feed passage () and a flowmeter such as an MFM (), wherein the washing fluid is allowed to flow to the mass flow controller () through the MFM (), and the flow of the washing fluid detected by the MFM () is compared with a target flow set in the mass flow controller () to check whether the mass flow controller () operates normally or not.

Processing device and method of maintaining the device

Disclosed is an MOCVD system for forming a tantalum oxide film on a semiconductor wafer, while using pentoethoxytantalum as a liquid raw material. In the system, a raw material tank is connected to a vaporizing unit through an upstream main line with a flow control unit. The vaporizing unit is connected to the process chamber of a film-forming unit through a downstream main line. A partition wall is arranged to surround the entire system so as to isolate it from the other space in the clean room. The raw material tank, the flow control unit, and part of the upstream main line therebetween are accommodated in a constant temperature and heat insulating box all together and are kept at a temperature of from 25 to 35&deg; C.

Growing community of inventors

Nirasaki, Japan

Kouji Shimomura