Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Kouji Oomori

Takayuki Yoshida

Naoto Ueda

Teruaki Kasai

Takuma Motofuji

Seishi Oida

Shigefumi Dohi

Kouki Tsumura

A semiconductor laser device includes first heat radiator () having first flow path () and second flow path () inside to allow a flow of a refrigerant and second heat radiator () put in contact with an upper surface of the first heat radiator. The first flow path and the second flow path are independent of each other. The second heat radiator includes an insulating member that internally has third flow path () communicating with first flow path (). The semiconductor laser device further includes lower electrode block () disposed on a portion of an upper surface of the second heat radiator, submount () being made of a conductive material and being disposed on a remainder of the upper surface of second heat radiator (), semiconductor laser element () disposed on an upper surface of submount (), and upper electrode block () disposed such that submount () and semiconductor laser element () are clamped between the upper electrode block and second heat radiator (). Second flow path () is formed below a zone for the disposition of lower electrode block ().

Semiconductor laser device

Semiconductor laser device () includes lower electrode block () that has a first terminal hole and first and second connection holes, upper electrode block () that has third connection holes communicating with the respective first connection holes and a second terminal hole, heat sink () that has fourth connection holes communicating with the respective second connection holes, and optical component () attached to upper electrode block (). The first and the second connection holes are formed on both side of a recess that is formed to house a submount on which a semiconductor laser element is disposed. Lower electrode block () is disposed on heat sink (). Lower electrode block () and upper electrode block () are fastened together with first fasteners (), whereas lower electrode block () and heat sink () are fastened together with second fasteners ().

A semiconductor laser device includes a heat sink, a submount, a first electrode, an insulating layer, a semiconductor laser element, a connecting portion, and a second electrode. The submount is conductive and on a first region of an upper surface of the heat sink. The first electrode is conductive and on a second region, different from the first region, of the upper surface of the heat sink. The first electrode is electrically connected either to at least part of a side surface of the submount or to an upper surface of the submount.

Semiconductor laser device and method for manufacturing same

A semiconductor device according to the present disclosure includes an electrically conductive first electrode block, an electrically conductive submount, an insulating layer, a semiconductor element, an electrically conductive bump, and an electrically conductive second electrode block. The submount is provided in a first region of the upper surface of the first electrode block, and electrically connected to the first electrode block. The semiconductor element is provided on the submount, and has a first electrode electrically connected to the submount. The bump is provided on the upper surface of a second electrode, opposite the first electrode, of the semiconductor element, and electrically connected to the second electrode. A third region of the lower surface of the second electrode block is electrically connected to the bump via an electrically conductive metal layer. An electrically conductive metal sheet is provided between the metal layer and the bump.

Semiconductor device

A laser module according to the present disclosure includes a laser diode, a first collimating lens, and a beam twister. The laser diode includes a plurality of emitters and emits laser light from each of the plurality of emitters through a light emission surface. The first collimating lens is provided at a first distance from the light emission surface of the laser diode and parallelizes a fast-axis-wise divergence of the laser light. The beam twister is provided at a second distance away from the first collimating lens and turns the laser light approximately 90 degrees. Each of the plurality of emitters has a width of 5 &#x3bc;m to 120 &#x3bc;m on the light emission surface. The plurality of emitters have a pitch of 295 &#x3bc;m to 305 &#x3bc;m on the light emission surface.

Laser module

A semiconductor device of the present invention includes a circuit board having a number of electrode portions on the front side and the underside, an electronic circuit element such as a semiconductor chip bonded to the electrode portions on the front side of the circuit board and composing an electronic circuit; and a plurality of ball electrodes for external connection, the ball electrodes being formed on the electrode portions on the underside of the circuit board. Of the electrode portions on the underside of the circuit board, an electrode portion on the outer periphery is formed larger than an electrode portion on the inner periphery. The plurality of ball electrodes are solder balls heated and melted on the electrode portions on the underside of the board so as to form an alloy on the interfaces, the solder balls containing tin and silver but not containing lead.

A semiconductor device includes a substrate having external connection terminals, and a semiconductor chip mounted over a semiconductor-chip mounting portion of the substrate. The external connection terminals are formed by sequentially forming an electroless nickel plating layer, an electroless gold plating layer, and an electrolytic gold plating layer on a terminal portion formed on a surface of the substrate.

The semiconductor laser device of the present invention has a conductive first heatsink member, a conductive first adhesive, and a semiconductor laser element. The first adhesive is disposed on the first heatsink member, and the semiconductor laser element is disposed on the first adhesive. The first adhesive reaches an upper part of the side surface of the first heatsink member under the laser emission surface for laser emission of the semiconductor laser element. The structure further improves heat dissipation of the semiconductor laser element; at the same time, it is effective in obtaining laser light from the semiconductor laser element.

Semiconductor laser apparatus and method for manufacturing same

A semiconductor device includes a first semiconductor device and second semiconductor device stacked on the first semiconductor device. The first semiconductor device includes a first interconnect substrate, a first semiconductor element provided on an upper surface of the first interconnect substrate, a first electrode provided on the upper surface of the first interconnect substrate, and an insulating layer having an opening portion through which part of the first electrode is exposed. The second semiconductor device includes a second interconnect substrate, a second semiconductor element provided on an upper surface of the second interconnect substrate, a second electrode provided on a lower surface of the second interconnect substrate, and an inter-device connection terminal connected to the second electrode. Part of the first electrode exposed through the opening portion has a smaller area than an area of the opening portion.

Growing community of inventors

Shiga, Japan

Kouji Oomori