Mitsubishi Denki Kabushiki Kaisha

Other

Kouji Oda

Hiroyuki Kawata

Mahito Sawada

Hiroshi Tobimatsu

Yuuki Kamiura

Seiji Ohkura

Koji Shibata

Kouichirou Tsujita

Koichiro Narimatsu

Atsumi Yamaguchi

Junjiro Sakai

Kouji Shibata

A manufacturing method of a semiconductor device allowing successful filling of an insulating film by HDP-CVD (High Density Plasma-Chemical Vapor Deposition) in a gap or valley between densely placed interconnections is provided. The method includes the steps of forming semiconductor elements on a semiconductor substrate, forming on the semiconductor elements a plurality of interconnections with top protective layers side by side to electrically connect the semiconductor elements, forming a protective insulating film by CVD other than HDP-CVD to cover top and side surfaces of the interconnections and a bottom surface of a gap between the interconnections, and forming an insulating film by HDP-CVD to cover the protective insulating film and to fill in the gap between the interconnections covered with the protective insulating film.

Semiconductor device and manufacturing method thereof

An antireflection coating has two-layer structure including lower and upper silicon nitride films (p-SiN films) formed by plasma CVD. For the lower p-SiN film, the real part of its complex index of refraction is set in the range not less than 1.9 nor more than 2.5, the imaginary part is set in the range of not less than 0.9 nor more than 1.7, and the film thickness is set in the range of not less than 20 nm nor more than 60 nm. For the upper p-SiN film, the real part of its complex index of refraction is set in the range not less than 1.7 nor more than 2.4, the imaginary part is set in the range of not less than 0.15 nor more than 0.75, and the film thickness is set in the range of not less than 10 nm nor more than 40 nm.

Antireflection coating and semiconductor device manufacturing method

A method of manufacturing a semiconductor device is provided, which prevents a polyimide film from coming unstuck from a film to be subjected to isotropic etching, and further prevents deposits adhered to respective side faces of the films from coming off, during a heat treatment for imidizing the polyimide film. Isotropic etching is performed on a silicon nitride film using, as a mask, a polyimide film having a predetermined pattern formed therein. Next, a heat treatment is carried out to imidize the polyimide film prior to performing anisotropic etching on a silicon oxide film . During the heat treatment for imidizing the polyimide film , since deposits, which are to be generated by anisotropic etching, are not yet adhered to the respective side faces of the films, the polyimide film does not come unstuck from the silicon nitride film . Further, the deposits which are adhered to the respective side face of the films after the heat treatment will not come off.

Method of manufacturing semiconductor device

A protective insulating film in a semiconductor device is formed in a multi-layer structure. A lower layer portion is constituted by an organic-silane-based silicon oxide film formed by a P-CVD process using organic silane and oxygen to improve step coverage. An upper layer portion is constituted by a silane-based silicon oxide film containing excess silicon in an amount greater than that in the stoichiometric composition and formed by a P-CVD process to improve moisture resistance.

Semiconductor device and a process for forming a protective insulating layer thereof

Semiconductor device including a two-layer protective insulating layer

Growing community of inventors

Tokyo, Japan

Kouji Oda